SOT23 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
ISSUE 3 – AUGUST 1996
FEATURES
* 60 Volt VCEO
* Gain of 10K at IC=0.5 Amp
PARTMARKING DETAILS – FMMT38A – 4J
FMMT38B – 5J
FMMT38C – 7J
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage VEBO 10 V
Peak Pulse Current ICM 800 mA
Continuous Collector Current IC300 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage V(BR)CBO 80 V IC=10
A, IE=0
Collector-Emitter
Sustaining Voltage VCEO(sus) 60 V IC=10mA, IB=0
Emitter-Base
Breakdown Voltage V(BR)EBO 10 V IE=10
A, IC=0
Collector Cut-Off
Current ICBO 100 nA VCB=60V, IE=0
Emitter Cut-Off Current IEBO 100 nA VEB=8V, IC=0
Collector-Emitter
Saturation Voltage VCE(sat) 1.25 V IC=800mA, IB=8mA*
Base-Emitter
Turn-on Voltage VBE(on) 1.8 V IC=800mA, VCE=5V*
Static
Forward
Current
Transfer
Ratio
FMMT38A hFE 500
1000 IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
FMMT38B 2000
4000 IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
FMMT38C 5000
10000 IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FMMT38A
FMMT38B
FMMT38C
C
B
E
0.0001
50
150
100
Pulse Width (seconds)
10 10010.10.010.001
0
D=1 (D.C.)
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
0.001 0.01 0.1 1
0.8
0.2
1.0
TYPICAL CHARACTERISTICS
VCE(sat) v IC
IC - Collector Current (Amps)
V
CE(sat)
- (Volts)
IC - Collector Current (Amps)
VBE(sat) v I C
IC - Collector Current (Amps)
VBE(on) v IC
V
BE
- (Volts)
V
BE(sat)
- (Volts)
0.4
0.001 0.01 0.1 1
0
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
IC - Collector Current (Amps)
hFE v IC
h
FE
- Normalised Gain
10
1.0
0.5
2.0
1.5
VCE=5V
IC/IB=100
10
0.6
0.001 0.01 0.1 1 10
IC/IB=100
1.0
0.5
2.0
1.5
0.001 0.01 0.1 1 10
VCE=5V
-55°C
+25°C
+100°C
+175°C
-55°C
+25°C
+100°C
+175°C
-55°C
+25°C
+100°C
-5C
+25°C
+100°C
+175°C
Maximum transient thermal impedance
Thermal Resistance C/W)
100m
1s
100ms
IC - Collector Current (A)
DC
1m
VCE - Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100us
1 10 100
10m
100m
1
FMMT38A
FMMT38B
FMMT38C
3 - 101 3 - 100
FMMT38A /B Not Recommended for
New Design Please Use FMMT38C
SOT23 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
ISSUE 3 – AUGUST 1996
FEATURES
* 60 Volt VCEO
* Gain of 10K at IC=0.5 Amp
PARTMARKING DETAILS – FMMT38A4J
FMMT38B5J
FMMT38C7J
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage VEBO 10 V
Peak Pulse Current ICM 800 mA
Continuous Collector Current IC300 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage V(BR)CBO 80 V IC=10
A, IE=0
Collector-Emitter
Sustaining Voltage VCEO(sus) 60 V IC=10mA, IB=0
Emitter-Base
Breakdown Voltage V(BR)EBO 10 V IE=10
A, IC=0
Collector Cut-Off
Current ICBO 100 nA VCB=60V, IE=0
Emitter Cut-Off Current IEBO 100 nA VEB=8V, IC=0
Collector-Emitter
Saturation Voltage VCE(sat) 1.25 V IC=800mA, IB=8mA*
Base-Emitter
Turn-on Voltage VBE(on) 1.8 V IC=800mA, VCE=5V*
Static
Forward
Current
Transfer
Ratio
FMMT38A hFE 500
1000 IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
FMMT38B 2000
4000 IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
FMMT38C 5000
10000 IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FMMT38A
FMMT38B
FMMT38C
C
B
E
0.0001
50
150
100
Pulse Width (seconds)
10 10010.10.010.001
0
D=1 (D.C.)
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
0.001 0.01 0.1 1
0.8
0.2
1.0
TYPICAL CHARACTERISTICS
VCE(sat) v IC
IC - Collector Current (Amps)
V
CE(sat)
- (Volts)
IC - Collector Current (Amps)
VBE(sat) v I C
IC - Collector Current (Amps)
VBE(on) v IC
V
BE
- (Volts)
V
BE(sat)
- (Volts)
0.4
0.001 0.01 0.1 1
0
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
IC - Collector Current (Amps)
hFE v IC
h
FE
- Normalised Gain
10
1.0
0.5
2.0
1.5
VCE=5V
IC/IB=100
10
0.6
0.001 0.01 0.1 1 10
IC/IB=100
1.0
0.5
2.0
1.5
0.001 0.01 0.1 1 10
VCE=5V
-55°C
+25°C
+100°C
+175°C
-55°C
+25°C
+100°C
+175°C
-55°C
+25°C
+100°C
-55°C
+25°C
+100°C
+175°C
Maximum transient thermal impedance
Thermal Resistance (°C/W)
100m
1s
100ms
IC - Collector Current (A)
DC
1m
VCE - Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100us
1 10 100
10m
100m
1
FMMT38A
FMMT38B
FMMT38C
3 - 101 3 - 100
FMMT38A /B Not Recommended for
New Design Please Use FMMT38C
Mouser Electronics
Authorized Distributor
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Diodes Incorporated:
FMMT38CTA