DISCRETE SEMICONDUCTORS DATA SHEET M3D175 BLF202 HF/VHF power MOS transistor Product specification Supersedes data of 1999 Oct 20 2003 Sep 19 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 FEATURES PINNING - SOT409A * High power gain PIN * Easy power control 1, 8 source * Gold metallization 2, 3 gate * Good thermal stability 4, 5 source * Withstands full load mismatch. 6, 7 drain DESCRIPTION APPLICATIONS * Communications transmitters in the HF/VHF range with a nominal supply voltage of 12.5 V. 8 handbook, halfpage 5 DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor in an 8-lead SOT409A SMD package with a ceramic cap. 1 Top view 4 MBK150 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Tmb = 25 C in a common source test circuit. MODE OF OPERATION CW, class-B f (MHz) VDS (V) PL (W) Gp (dB) D (%) 175 12.5 2 >10 >50 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. 2003 Sep 19 2 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage - 40 V VGS gate-source voltage - 20 V ID drain current (DC) Ptot total power dissipation Tstg Tj - 1 A - 5.7 W storage temperature -65 150 C junction temperature - 200 C Tmb 85 C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS thermal resistance from junction to mounting base Rth j-mb Tmb 85 C; Ptot = 5.7 W MCD789 10 handbook, halfpage ID (A) 1 (1) (2) 10-1 10-2 1 10 VDS (V) 102 (1) Current is this area may be limited by RDSon. (2) Tmb = 85 C. Fig.2 DC SOAR. 2003 Sep 19 3 VALUE UNIT 20.5 K/W Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage ID = 3 mA; VGS = 0 40 - - V VGSth gate-source threshold voltage ID = 3 mA; VDS = 10 V 2 - 4.5 V IDSS drain-source leakage current VGS = 0; VDS = 12.5 V - - 10 A IGSS gate-source leakage current VGS = 20 V; VDS = 0 - - 1 A IDSX on-state drain current VGS = 15 V; VDS = 10 V - 1.3 - A RDSon drain-source on-state resistance ID = 0.3 A; VGS = 15 V - 3.5 4 80 gfs forward transconductance ID = 0.3 A; VDS = 10 V 135 - mS Cis input capacitance VGS = 0; VDS = 12.5 V; f = 1 MHz - 5.3 - pF Cos output capacitance VGS = 0; VDS = 12.5 V; f = 1 MHz - 7.8 - pF Crs feedback capacitance VGS = 0; VDS = 12.5 V; f = 1 MHz - 1.8 - pF VGS group indicator LIMITS (V) GROUP LIMITS (V) GROUP MIN. MAX. A 2.0 2.1 MIN. MAX. O 3.3 3.4 B 2.1 2.2 P 3.4 3.5 C 2.2 2.3 Q 3.5 3.6 D 2.3 2.4 R 3.6 3.7 E 2.4 2.5 S 3.7 3.8 F 2.5 2.6 T 3.8 3.9 G 2.6 2.7 U 3.9 4.0 H 2.7 2.8 V 4.0 4.1 J 2.8 2.9 W 4.1 4.2 K 2.9 3.0 X 4.2 4.3 L 3.0 3.1 Y 4.3 4.4 Z 4.4 4.5 M 3.1 3.2 N 3.2 3.3 2003 Sep 19 4 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 MGP111 15 ID (mA) T.C. (mV/K) 10 1200 5 800 0 400 -5 MGP112 1600 handbook, halfpage handbook, halfpage 1 102 10 ID (mA) 0 103 0 4 8 12 16 20 VGS (V) VDS = 10 V. VDS = 10 V; Tj = 25 C. Fig.3 Temperature coefficient of gate-source voltage as a function of drain current; typical values. Fig.4 Drain current as a function of gate-source voltage; typical values. MGP113 5 MGP114 30 handbook, halfpage handbook, halfpage RDSon C (pF) () 4 20 3 Cos 2 10 Cis 1 0 0 40 80 120 Tj (C) 0 160 0 4 8 12 VDS (V) 16 VGS = 15 V; ID = 0.3 A. VGS = 0; f = 1 MHz. Fig.5 Drain-source on-state resistance as a function of junction temperature; typical values. 2003 Sep 19 Fig.6 5 Input and output capacitance as functions of drain-source voltage; typical values. Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 MGP115 5 handbook, halfpage Crs (pF) 4 3 2 1 0 0 4 8 12 VDS (V) 16 VGS = 0; f = 1 MHz. Fig.7 Feedback capacitance as a function of drain-source voltage; typical values. APPLICATION INFORMATION FOR CLASS-B OPERATION Tmb = 25 C; RGS = 237 ; unless otherwise specified. RF performance in CW operation in a common source class-B test circuit. MODE OF OPERATION CW, class-B f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) D (%) 175 12.5 20 2 >10 >50 typ. 13 typ. 55 Ruggedness in class-B operation The BLF202 is capable of withstanding a load mismatch corresponding to VSWR = 50:1 through all phases under the following conditions: VDS = 15.5 V; f = 175 MHz at rated load power. 2003 Sep 19 6 Philips Semiconductors Product specification HF/VHF power MOS transistor MGP116 20 handbook, halfpage Gp (dB) BLF202 MGP117 100 D 4 handbook, halfpage PL (W) (%) 16 80 Gp 12 3 60 D 2 8 40 4 20 1 0 1 1.5 2 2.5 0 3.5 3 0 0 PL (W) 0.2 0.4 0.6 PIN (W) 0.8 Class-B operation; VDS = 12.5 V; IDQ = 20mA; f = 175 MHz. Class-B operation; VDS = 12.5 V; IDQ = 20 mA; f = 175 MHz. Fig.8 Fig.9 Power gain and efficiency as a functions of load power; typical values. Load power as a function of input power; typical values. C10 handbook, full pagewidth 50 input C1 C8 L3 D.U.T. L4 L2 L1 C9 L5 C2 R1 C5 R6 C6 C3 L6 R2 +VD C7 C4 R3 R5 R4 MGP118 f = 175 MHz. Fig.10 Test circuit for class-B operation. 2003 Sep 19 7 C11 50 output Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 List of components (see Fig.10) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C11 film dielectric trimmer 2 to 9 pF 2222 809 09005 C2, C9 film dielectric trimmer 2 to 9 pF 2222 809 09002 C3, C5 multilayer ceramic chip capacitor; note 1 1 nF; 500 V C4, C6 multilayer ceramic chip capacitor 2 x 100 nF in parallel, 50 V C7 Sprague electrolytic tantalum capacitor 2.2 F; 35 V C8 multilayer ceramic chip capacitor; note 1 5.1 pF; 500 V C10 multilayer ceramic chip capacitor; note 1 9.1 pF; 500 V L1 8 turns enamelled 0.8 mm copper wire 137 nH length 5.1 mm; int. dia. 4 mm; leads 2 x 5 mm L2, L3 stripline; note 2 81 8 mm x 2 mm L4 3 turns enamelled 1 mm copper wire 57 nH length 5 mm; int. dia. 6 mm; leads 2 x 5 mm L5 9 turns enamelled 1 mm copper wire 355 nH length 11 mm; int. dia. 7 mm; leads 2 x 5 mm L6 grade 3B Ferroxcube RF choke R1 0.4 W metal film resistor 237 2322 151 72371 R2 0.4 W metal film resistor 1 k 2322 151 71002 R3 0.4 W metal film resistor 1 M 2322 151 71005 R4 10 turns cermet potentiometer 5 k R5 0.4 W metal film resistor 7.5 k 2322 151 77502 R6 1 W metal film resistor 10 2322 153 51009 2222 852 47104 4312 020 36642 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (r = 2.2), thickness 1.6 mm. 2003 Sep 19 8 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 MGP119 250 MGP120 50 ZL handbook, halfpage handbook, halfpage Zi () () 40 RL 125 30 ri 20 0 XL 10 xi -125 0 50 100 150 f (MHz) 0 200 0 50 100 150 f (MHz) 200 Class B-operation; VDS = 12.5 V; IDQ = 20 mA; RGS = 237 ; PL = 2 W. Class B-operation; VDS = 12.5 V; IDQ = 20 mA; RGS = 237 ; PL = 2 W. Fig.11 Input impedance as a function of frequency (series of components); typical values. Fig.12 Load impedance as a function of frequency (series components); typical values. MGP121 20 handbook, halfpage Gp (dB) 15 handbook, halfpage 10 Zi ZL 5 MBA379 0 0 50 100 150 f (MHz) 200 Class B-operation; VDS = 12.5 V; IDQ = 20 mA; RGS = 237 ; PL = 2 W. Fig.14 Power gain as a function of frequency; typical values. Fig.13 Definition of MOS impedance. 2003 Sep 19 9 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 MOUNTING RECOMMENDATIONS Both the metallized ground plate and the device leads contribute to the heat flow. It is recommended that the transistor be mounted on a grounded metallized area of the printed-circuit board. This area should be of maximum 0.8 mm thickness and include at least 12 x 0.5 diameter through metallized holes filled with solder. A thermal resistance Rth(mb-h) of 5 K/W can be achieved if heatsink compound is applied when the transistor is mounted on the printed-circuit board. handbook, full pagewidth 1.87 (2x) 0.60 (4x) 0.80 (2x) 0.50 (12x) 7.38 3.60 1.00 (8x) 1.00 (9x) 4.60 Dimensions in mm. Fig.15 Footprint SOT409A. 2003 Sep 19 10 MGK390 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 BLF202 scattering parameters VDS = 12.5 V; ID = 20 mA; note 1 s11 f (MHz) s21 s12 s22 |s11| |s21| |s12| |s22| 5 1.00 -2.00 5.76 178.30 0.01 88.30 0.97 -2.40 10 1.00 -4.00 5.75 176.50 0.01 86.70 0.97 -4.90 20 1.00 -7.90 5.72 172.90 0.02 83.40 0.97 -9.70 30 0.99 -11.90 5.69 169.40 0.03 80.20 0.97 -14.50 40 0.99 -15.80 5.65 165.90 0.04 77.00 0.96 -19.30 50 0.98 -19.60 5.58 162.40 0.05 73.80 0.96 -23.90 60 0.97 -23.40 5.51 159.00 0.06 70.70 0.95 -28.50 70 0.96 -27.00 5.42 -155.70 0.07 67.70 0.94 -33.00 80 0.94 -30.70 5.33 152.40 0.08 64.80 0.93 -37.40 90 0.93 -34.10 5.23 149.30 0.09 62.00 0.92 -41.60 100 0.92 -37.50 5.12 146.40 0.10 59.40 0.92 -45.60 125 0.89 -45.60 4.86 139.30 0.12 53.10 0.89 -55.30 150 0.85 -53.00 4.58 132.60 0.13 47.20 0.87 -64.10 175 0.82 -59.80 4.29 126.60 0.14 42.00 0.85 -72.00 200 0.79 -66.00 4.03 121.20 0.15 37.70 0.83 -79.20 250 0.74 -77.00 3.55 111.30 0.17 29.30 0.79 -91.70 300 0.70 -86.30 3.15 103.30 0.17 23.10 0.77 -101.90 350 0.68 -94.30 2.80 96.00 0.18 17.30 0.76 -110.30 400 0.66 -101.40 2.52 89.80 0.18 12.90 0.75 -117.20 450 0.64 -107.80 2.27 83.80 0.18 8.60 0.74 -123.20 500 0.64 -113.50 2.07 78.80 0.18 5.20 0.74 -128.30 600 0.63 -123.80 1.75 69.60 0.17 -0.70 0.74 -136.60 700 0.64 -132.60 1.51 61.40 0.15 -5.30 0.75 -143.20 800 0.65 -140.60 1.32 54.40 0.14 -8.20 0.76 -148.60 900 0.67 -148.10 1.16 48.20 0.12 -9.70 0.77 -153.30 1000 0.68 -155.00 1.04 42.90 0.11 -9.20 0.78 -157.40 Note 1. For more extensive s-parameters see internet: http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast. 2003 Sep 19 11 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 PACKAGE OUTLINE Ceramic surface mounted package; 8 leads SOT409A D A D2 B c w2 B H1 8 5 L E2 H E A 1 4 e w1 b Q1 0 2.5 5 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D2 E E2 e H H1 L Q1 w1 w2 mm 2.36 2.06 0.58 0.43 0.23 0.18 5.94 5.03 5.16 5.00 4.93 4.01 4.14 3.99 1.27 7.47 7.26 4.39 4.24 1.02 0.51 0.10 0.00 0.25 0.25 7 0 inches 0.093 0.081 0.023 0.017 0.009 0.007 0.234 0.198 0.203 0.197 0.194 0.158 0.163 0.157 0.050 0.294 0.286 0.173 0.167 0.040 0.020 0.004 0.000 0.010 0.010 7 0 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 98-01-27 SOT409A 2003 Sep 19 EUROPEAN PROJECTION 12 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Sep 19 13 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA75 (c) Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/02/pp14 Date of release: 2003 Sep 19 Document order number: 9397 750 11595