Philips Semiconductors Product specification Schottky barrier (double) diodes BAS70W series FEATURES PINNING Low forward voltage BAS70 . PIN * High breakdown voltage W | -04w | -osw | -o6w 3 e Guard ring protected 1 ay a a ky ; > * Very small SMD package 2 incl ke ao ko e Low capacitance. 3 ky | Kt, @a | Ki, Ke | ay, ae APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits Blocking diodes. DESCRIPTION Planar Schottky barrier diodes. Single diodes (BAS70W) and double diodes with different pinning (BAS70-04W; -O5W; -O6W) are available. The diodes are encapsulated ina SOT323 very small plastic SMD > package. 1 iG Top view MBC870 Fig.1 Simplified outline (SOT323) and pin configuration. Fig.3 BAS70-04W diode configuration (symbol). 3 rome MLCHS Fig.4 BAS70-05W diode configuration (symbol). MARKING MARKING TYPE NUMBER CODE BAS70W 73- BAS70-04W 74- BAS70-05W 75- BAS70-06W 76- ne, MLC357 Fig.2 BAS7OW single diode configuration (symbol). fa MCI Fig.5 BAS70-06W diode configuration (symbol). 1996 Mar 19 2-26Philips Semiconductors Product specification Schottky barrier (double) diodes BAS7OW series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL | PARAMETER CONDITIONS | MIN. | MAX. | UNIT Per diode Va continuous reverse voltage - 70 Vv ir continuous forward current ~ 70 mA lerm repetitive peak forward current t<1s,5<50.5 ~ 70 mA lrsm non-repetitive peak forward current tp < 10 ms - 100 mA Tstg storage temperature -65 +150 [C Tj junction temperature - 150 C Tamb operating ambient temperature -65 +150 = |C ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL | PARAMETER CONDITIONS | max. | UNIT Per diode Ve forward voltage see Fig.6 lrF=1mA 410 mV lp =10mA 750 mV Ip=15mA 1 V lr reverse current Vr = 50 V; note 1; see Fig.7 100 nA Vr = 70 V; note 1; see Fig.7 10 pA t charge carrier life time (Krakauer method) [Ip =5 mA 100 ps Cy diode capacitance f= 1 MHz; Va =OV; see Fig.9 | 2 pF Note 1. Pulsed test: t) = 300 ps; 6 = 0.02. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rinj-a thermal resistance from junction to ambient | note 1 625 K/W Note 1. Refer to SOT323 standard mounting conditions. 1996 Mar 19 2-27Philips Semiconductors Product specification Schottky barrier (double) diodes BAS70W series GRAPHICAL DATA 402 ; 102 I R (ma) (pA) 10 10 1 1 1071 -1 0 102 10? 103 0 0.2 04 0.6 08 1 0 20 40 80 Ve) Va) (1) Tamp = 125 C. (2) Temp = 85C. (1) Tamb = 125 C. (3) Temp = 25 C. (2) Tamp = 85 C. (4) Tamp = ~40 C. (3) Tamb = 25 C. Fig.6 Forward current as a function of forward voltage; typical values. Fig.7 Reverse current as a function of reverse voltage; typical values. 108 dit (Q) 107 10 10? 10" 1 10 ip (mA) f= 10 kHz. Fig.8 Differential forward resistance as a function of forward current; typical values. 80 Vat) f= 1 MHz; Tab = 25 C. Fig.9 Diode capacitance as a function of reverse voltage; typical values. 1996 Mar 19