IRFB4137PbF
1 www.irf.com © 2012 International Rectifier October 30, 2012
HEXFET® Power MOSFET
D
S
G
TO-220Pak
G D S
Gate Drain Source
Application
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
IRFB4137PbF TO-220Pak Tube 50 IRFB4137PbF
VDSS 300V
RDS(on) typ. 56m
max 69m
ID 38A
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 38
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 27
IDM Pulsed Drain Current  152
PD @TC = 25°C Maximum Power Dissipation 341 W
Linear Derating Factor 2.3 W/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 8.9 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range -55 to + 175
Soldering Temperature, for 10 seconds
(1.6mm from case) 300
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy  414mJ
Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case  ––– 0.44
°C/W
RCS Case-to-Sink, Flat Greased Surface 0.50 –––
RJA Junction-to-Ambient  ––– 62
°C
S
D
G
IRFB4137PbF
2 www.irf.com © 2012 International Rectifier October 30, 2012
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 300 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.24 ––– V/°C Reference to 25°C, ID = 3.5mA
RDS(on) Static Drain-to-Source On-Resistance ––– 56 69 m VGS = 10V, ID = 24A 
VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS =300 V, VGS = 0V
––– ––– 250 VDS =300V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
RG Gate Resistance ––– 1.3 ––– 
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
gfs Forward Transconductance 45 ––– ––– S VDS = 50V, ID =24A
Qg Total Gate Charge ––– 83 125
nC
ID = 24A
Qgs Gate-to-Source Charge ––– 28 42 VDS = 150V
Qgd Gate-to-Drain Charge ––– 26 39 VGS = 10V
td(on) Turn-On Delay Time ––– 18 –––
ns
VDD = 195V
tr Rise Time ––– 23 ––– ID = 24A
td(off) Turn-Off Delay Time ––– 34 ––– RG= 2.2
tf Fall Time ––– 20 ––– VGS = 10V
Ciss Input Capacitance ––– 5168 –––
pF
VGS = 0V
Coss Output Capacitance ––– 300 ––– VDS = 50V
Crss Reverse Transfer Capacitance ––– 77 ––– ƒ = 1.0MHz
Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 196 ––– VGS = 0V, VDS = 0V to 240V
See Fig.11
Coss eff.(TR) Output Capacitance (Time Related) ––– 265 ––– VGS = 0V, VDS = 0V to 240V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 38
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 152 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 24A,VGS = 0V 
trr Reverse Recovery Time ––– 302 ––– ns TJ = 25°C VDD = 255V
––– 379 ––– TJ = 125°C IF = 24A,
Qrr Reverse Recovery Charge ––– 1739 ––– nC TJ = 25°C di/dt = 100A/µs 
––– 2497 ––– TJ = 125°C
IRRM Reverse Recovery Current ––– 13 ––– A TJ = 25°C
D
S
G
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Recommended max EAS limit, starting TJ = 25°C, L = 1.56mH, RG = 50, IAS = 24A, VGS =10V.
I
SD 24A, di/dt 1771A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
C
oss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
C
oss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994
Ris measured at TJ approximately 90°C
IRFB4137PbF
3 www.irf.com © 2012 International Rectifier October 30, 2012
Fig 1. Typical Output Characteristics
2 4 6 8 10 12 14
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 175°C
VDS = 50V
60µs PULSE WIDTH
Fig 4. Normalized On-Resistance vs. Temperature
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
BOTTOM 5.0V
60µs PULSE WIDTH
Tj = 25°C
5.0V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
5.0V
60µs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
BOTTOM 5.0V
110 100 1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
-60 -20 20 60 100 140 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 24A
VGS = 10V
0 20 40 60 80 100 120
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VGS, Gate-to-Source Voltage (V)
VDS= 240V
VDS= 150V
VDS= 60V
ID = 24A
IRFB4137PbF
4 www.irf.com © 2012 International Rectifier October 30, 2012
-60 -20 20 60 100 140 180
TJ , Temperature ( °C )
270
280
290
300
310
320
330
340
350
360
370
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Id = 3.5mA
Fig 8. Maximum Safe Operating Area
-50 0 50 100 150 200 250 300 350
VDS, Drain-to-Source Voltage (V)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
Energy (µJ)
Fig 11. Typical Coss Stored Energy Fig 12. Threshold Voltage vs. Temperature
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
Fig 7. Typical Source-Drain Diode Forward Voltage
-75 -25 25 75 125 175 225
TJ , Temperature ( °C )
1.0
2.0
3.0
4.0
5.0
6.0
VGS(th), Gate threshold Voltage (V)
ID = 250µA
ID = 1.0mA
ID = 1.0A
Fig 10. Drain-to–Source Breakdown Voltage
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
DC
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
7
14
21
28
35
42
ID, Drain Current (A)
Fig 9. Maximum Drain Current vs. Case Temperature
IRFB4137PbF
5 www.irf.com © 2012 International Rectifier October 30, 2012
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0200 400 600 800 1000
diF /dt (A/µs)
1000
1500
2000
2500
3000
3500
QRR (nC)
IF = 16A
VR = 255V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/µs)
10
20
30
40
50
IRRM (A)
IF = 16A
VR = 255V
TJ = 25°C
TJ = 125°C
Fig 16. Typical Stored Charge vs. dif/dt Fig 17. Typical Stored Charge vs. dif/dt
Fig 14. Typical Recovery Current vs. dif/dt
0200 400 600 800 1000
diF /dt (A/µs)
10
20
30
40
50
60
IRRM (A)
IF = 24A
VR = 255V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/µs)
1000
1500
2000
2500
3000
3500
4000
4500
5000
QRR (nC)
IF = 24A
VR = 255V
TJ = 25°C
TJ = 125°C
Fig 15. Typical Recovery Current vs. dif/dt
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z
thJC ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
IRFB4137PbF
6 www.irf.com © 2012 International Rectifier October 30, 2012
Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 19a. Unclamped Inductive Test Circuit
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
Fig 20a. Switching Time Test Circuit
Fig 21a. Gate Charge Test Circuit
tp
V
(BR)DSS
I
AS
Fig 19b. Unclamped Inductive Waveforms
Fig 20b. Switching Time Waveforms
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
Fig 21b. Gate Charge Waveform
IRFB4137PbF
7 www.irf.com © 2012 International Rectifier October 30, 2012
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IN T E R N A T IO N A L PART NUMBER
R E C T IF IE R
LO T C O D E
ASSEM BLY
LO G O
YEAR 0 = 2000
DATE CODE
W EEK 19
LIN E C
LOT CODE 1789
E X A M P L E : T H IS IS A N IR F 1 0 1 0
N o te : "P " in a s s e m b ly lin e p o s itio n
indicates "Lead - Free"
IN TH E ASSEM BLY LIN E "C"
ASSEM BLED O N W W 19, 2000
TO-220AB packages are not recommended for Surface Mount Application.
IRFB4137PbF
8 www.irf.com © 2012 International Rectifier October 30, 2012
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F) ††
Moisture Sensitivity Level TO-220 N/A
RoHS Compliant Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101N Sepulveda., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.