DATA SHEET NE iC / SILICON TRANSISTOR ee / 2SD596 AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION The 2SD596 is designed for use in small type equipments especially recom- mended fer hybrid integrated circuit and other applications. PACKAGE DIMENSIONS in millimeters 2.8402 FEATURES @ Micro package. @ High OC current gain. hge : 200 TYP. (Veg = 1.0 V, ig = 100 mA} Complimentary to NEC 2SB624 PNP Transistor. ABSOLUTE MAXIMUM RATINGS Maximum Voltages and Current (Tg= 25 C} a Collector to Base Voltage Vecso 30 Vv Collector to Emitter Voltage Veto 25 v Marking Emitter to Base Voltage Veo 5.0 Vv a fT Collector Current (DC} lc 700 ma al $ nb _8 Maximum Power Dissipation aI oO { = Total Power Dissipation a j [ ) S at 25 C Ambient Temperature PT 200 mw 1 contener 7 Maximum Temperatures 2. Base 3 Storage Temperature Range Tstq - 55 to +150 C 3. Collector Operating Junction Temperature Tj 150 me ELECTRICAL CHARACTERISTICS ({, = 25 C) CHARACTERISTIC ] SYMBOL { MIN. Collector Cutoff Current |_Collector Cutoff Current =| IeBo Emitter Cutoff Current lEBO OC Current Gain heed | UNIT TEST CONDITIONS i ona Vcoa730 V, Ip=0 OC Current Gain hee? 50 | i Voen 10 V, i* 700 mA * on nt a a cen te cep ee ene a nin feet sen enn Base to Emitter Voltage VBE | 600 | 640 | 700 | mv | Vee =6.0 V, (c= 10 ma * Collector Saturation Voitage Output Capacitance Gain Bandwidth Product I * Pulsed: PW ss 350 ys, Outy Cycle 4 2% hee, Classification Marking | pv | ova pv3 | pva DVS hee L 110 to 180 | 136 to 220 170 to 270 | 200 to 320 | 250 to 400 Document No. TC-1263B (0.0.No. TC-5411B) Date Pubtished March 1990M Printed in Japan NEC Corporation 1984 368NEC TYPICAL CHARACTERISTICS {T= 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2SD596 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE ie Collector CurrentmA | i ; Free air = = 200 - 1 5 2 a @ 180 f--- a o & @ 100 F---- ao g 2 a mo - G a 50 7 100 125 T, ~Ambient Temperature C COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 1000 Vee =6.0 V 500 Pulsed 200 = 100 e 0 5 oO 20 5 3 ae) 2 oS 3 + 2 Ot O4 a5 Vee Base to Emitter Voltage~ 06 a7 08 Og 1.0 COLLECTOR AND BASE SATURATION VOLTAGE va. COLLECTOR CURRENT 10 Ip 10-ig 5 Pulsed 2 t a5 a2 ol 05 0.02 O01 0.006 Vag (sat) Base Saturation Voltage ~V Vee (sat) Collector Saturation Voltage -V 9.002 0.001 01 02 O5 1 2 5 ig ~Collector Current ~mA oO B isc 2 2 4 6 a 100 200 500 1000 Yor ~ Collector to Emitter Voltage ~ DC CURRENT GAIN vs. COLLECTOR CURRENT Voe= 10 Pulsed hee DC Current Gain 20 iO O102 05 1 2 5 10 2 0 10n 200 500 1000 By Ic ~ Collector Current ~ mA COLLECTOR TO EMITTER VOLTAGE vs. BASE CURRENT Puised Vog Collector to Emitter Voltage ~V O8 i 2 5 0 # O ig- Base Current mA 369NEC 2SD596 GAIN BANDWIDTH PRODUCT vs. QUTPUT CAPACITANCE vs, EMITTER CURRENT COLLECTOR TO BASE VOLTAGE Voge = 6.0 V t= 1.0 MHz e fy Gain Bandwidth Product MHz Cob Output Capacitance pF 4 ~2 a5 10 = 20 50 ~100 O1 m2 05 1 2 5 10-20 30 100 le Emitter Current ~ mA VeR Collector to Base Voltage ~ V 370