DATA SH EET
Product specification
Supersedes data of 2002 Dec 19 2003 Feb 24
DISCRETE SEMICONDUCTORS
BLF2022-30
UHF power LDMOS transistor
M3D750
2003 Feb 24 2
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2022-30
FEATURES
•Typical W-CDMA performance at a supply voltage of
28 V and IDQ of 240 mA:
– Output power = 3.5 W (AV)
– Gain = 12.9 dB
– Efficiency = 16.5%
– ACPR = −45 dBc at 3.84 MHz
–d
im = −42 dBc
•Easy power control
•Excellent ruggedness
•High power gain
•Excellent thermal stability
•Designed for broadband operation (2000 to 2200 MHz)
•Internally matched for ease of use.
APPLICATIONS
•RF power amplifiers for W-CDMA base stations and
multicarrier applications in the 2000 to 2200 MHz
frequency range.
DESCRIPTION
30 W LDMOS power transistor for base station
applications at frequencies from 2000 to 2200 MHz.
PINNING - SOT608A
PIN DESCRIPTION
1 drain
2 gate
3 source, connected to flange
Top view
2
1
3
MBL290
Fig.1 Simplified outline (SOT608A).
QUICK REFERENCE DATA
Typical RF performance at Th=25°C in a common source test circuit.
MODE OF OPERATION f
(MHz) VDS
(V) IDQ
(mA) PL
(W) Gp
(dB) ηD
(%) dim
(dBc) ACLR5
(dBc)
2-tone, class-AB f1= 2170; f2= 2170.1 28 240 30 (PEP) 12.6 34.3 −29.5 −
two-carrier W-CDMA test
model 1, 64 channels f1= 2155; f2= 2165 28 270 3.5 (AV) 12.9 16.5 −42 −45
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2003 Feb 24 3
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2022-30
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Notes
1. Thermal resistance is determined under specified RF operating conditions.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th=25°C; Rth j-c = 1.85 K/W; unless otherwise specified.
Ruggedness in class-AB operation
The BLF2022-30 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: VDS = 28 V; IDQ = 240 mA; PL= 30 W; f = 2170 MHz.
SYMBOL PARAMETER MIN. MAX. UNIT
VDS drain-source voltage −65 V
VGS gate-source voltage −±15 V
IDDC drain current −4.5 A
Tstg storage temperature −65 +150 °C
Tjjunction temperature −200 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-h thermal resistance from junction to heatsink Th=25°C; note 1 1.85 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS drain-source breakdown voltage VGS = 0; ID= 0.7 mA 65 −−V
V
GSth gate-source threshold voltage VDS = 10 V; ID=70mA 4.5 −5.5 V
IDSS drain-source leakage current VGS = 0; VDS =28V −−5µA
I
DSX on-state drain current VGS =V
GSth +9V; V
DS =10V 9 −−A
I
GSS gate leakage current VGS =±15 V; VDS =0 −−11 nA
gfs forward transconductance VDS = 10 V; ID= 2.5 A −2−S
RDSon drain-source on-state resistance VGS =V
GSth +9V; I
D= 2.5 A −0.3 −Ω
C
rs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz −1.7 −pF
MODE OF OPERATION f
(MHz) VDS
(V) IDQ
(mA) PL
(W) Gp
(dB) ηD
(%) dim
(dBc)
2-tone, class-AB f1= 2170; f2= 2170.1 28 240 30 (PEP) >11 >30 ≤−25
2003 Feb 24 4
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2022-30
handbook, halfpage
Gp
(dB)
GpηD
(%)
ηD
15
10
5
0
60
20
0
40
MLD935
02010 30 40 50
PL (PEP) (W)
Fig.2 Powergainanddrainefficiencyasfunctions
of peak envelope load power; typical
values.
VDS = 28 V; IDQ = 240 mA; Th≤25 °C;
f1= 2170 MHz; f2= 2170.1 MHz.
handbook, halfpage
dim
(dBc)
d3
d5
d7
02010 30 40 50
PL (PEP) (W)
0
−20
−60
−80
−40
MLD936
VDS = 28 V; IDQ = 240 mA; Th≤25 °C;
f1= 2170 MHz; f2= 2170.1 MHz.
Fig.3 Intermodulation distortion as a function of
peak envelope load power; typical values.
handbook, halfpage
Gp
(dB) ηD
(%)
15
10
5
0
60
20
0
40
MLD937
02010 30 40 50
PL (PEP) (W)
(1)
(3)
(2)
(4)
(6)(5)
Gp
ηD
Fig.4 Powergainanddrainefficiencyasfunctions
of peak envelope load power; typical
values.
VDS = 28 V; Th≤25 °C;
f1= 2170 MHz; f2= 2170.1 MHz.
(1) IDQ = 290 mA.
(2) IDQ = 240 mA. (3) IDQ = 190 mA.
(4) IDQ = 190 mA. (5) IDQ = 240 mA.
(6) IDQ = 290 mA.
handbook, halfpage
dim
(dBc)
02010 30 40 50
PL (PEP) (W)
0
−20
−60
−80
−40
MLD938
(2)
(3)
(1)
VDS = 28 V; Th≤25 °C;
f1= 2170 MHz; f2= 2170.1 MHz.
Fig.5 Third order intermodulation distortion as a
function of peak envelope load power;
typical values.
(1) IDQ = 190 mA. (2) IDQ = 240 mA. (3) IDQ = 290 mA.
2003 Feb 24 5
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2022-30
handbook, halfpage
Gp
(dB)
GpηD
(%)
ηD
15
10
5
0
30
10
0
20
MLD940
0426810
P
L (AV) (W)
Fig.6 Powergainanddrainefficiencyasfunctions
of average load power; typical values.
Two-carrier W-CDMA performance.
VDS = 28 V; IDQ = 270 mA; Th≤25 °C; f1= 2170 MHz.
Input signal: 3GPP W-CDMA 64 channels with 66% clipping;
peak to average power ratio: 8.5 dB at 0.01% probability on CCDF;
channel spacing/bandwidth = 5 MHz / 3.84 MHz.
handbook, halfpage
dim
(dBc) ACLR
(dBc)
0426810
0
−20
−60
−40
0
−20
−60
−40
MLD941
ACLR
dim
PL (AV) (W)
Fig.7 Intermodulation distortion and adjacent
channel leakage ratio (ACLR) as functions
of average load power; typical values.
Two-carrier W-CDMA performance.
VDS = 28 V; IDQ = 270 mA; Th≤25 °C; f1= 2155 MHz;
f1= 2165 MHz;.
Input signal: 3GPP W-CDMA 64 channels with 66% clipping;
peak to average power ratio: 8.5 dB at 0.01% probability on CCDF;
channel spacing/bandwidth = 5 MHz / 3.84 MHz.
2003 Feb 24 6
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2022-30
handbook, halfpage
2 2.1 2.152.05 2.2
ri
xi
f (GHz)
zi
(Ω)
12
0
4
8
MLD942
Fig.8 Input impedance as a function of frequency
(series components); typical values.
VDS = 28 V; ID= 240 mA; PL= 30 W; Th≤25 °C.
handbook, halfpage
2
RL
XL
2.05 f (GHz)
ZL
(Ω)
2.1 2.2
8
4
−4
−8
0
2.15
MLD943
Fig.9 Load impedance as a function of frequency
(series components); typical values.
VDS = 28 V; ID= 240 mA; PL= 30 W; Th≤25 °C.
handbook, full pagewidth
MLD944
output
50 Ω
input
50 Ω
C16
C10
C11
C12
L12
L11
L7 L8 L9 L10
L2
L1
L3
L6
R1
L4 L5
VDD
Vgate
C18 C15
C9
C13 C17 C14 C19 C20
C3
C4 C1
C7C8 C6
C5
C2
Fig.10 Class-AB test circuit.
2003 Feb 24 7
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2022-30
List of components (See Figs 10 and 11)
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. American Technical Ceramics type 100B or capacitor of same quality.
3. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (εr= 2.2); thickness 0.79 mm.
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C2, C9, C10 Tekelec variable capacitor 0.6 to 4.5 pF
C3, C4, C11, C12 multilayerceramic chipcapacitor;
note 1 6.8 pF
C5 multilayerceramic chipcapacitor;
note 1 2.2 pF
C6, C7, C13,
C14, C15, C16 multilayerceramicchipcapacitor;
note 1 12 pF
C8 tantalum capacitor 10 µF
C17, C18 multilayer ceramic chip capacitor 4.7 µF TDK C4532X7R1H475M
C19 multilayerceramic chipcapacitor;
note 2 1nF
C20 electrolytic capacitor 100 µF; 63 V
L1 handmade 2 loops, dia. 4 mm
L2 stripline; note 3 50 Ω12 ×2.4 mm
L3 stripline; note 3 43 Ω18 ×3mm
L4 stripline; note 3 29 Ω4×5mm
L5 stripline; note 3 10 Ω5×18.4 mm
L6 stripline; note 3 56 Ω34.4 ×2mm
L7 stripline; note 3 9 Ω10 ×20 mm
L8 stripline; note 3 29 Ω4×5mm
L9 stripline; note 3 41 Ω20 ×3.2 mm
L10 stripline; note 3 50 Ω5×2.4 mm
L11, L12 stripline; note 3 17 Ω24.5 ×10 mm
2003 Feb 24 8
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2022-30
handbook, full pagewidth
C2
MLD945
C1
C5
C3
C4
C6
C8
C7
R1 C20
L1
BLF2022-30 testjig input BLF2022-30 testjig output
BLF2022-30 testjig input BLF2022-30 testjig output
40
60
40
C10C9
C11
C12
C19
C15
C13
C17C14
C16
C18
Fig.11 Component layout for 2.17 GHz class-AB test circuit.
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr= 2.2), thickness 0.79 mm.
The other side is unetched and serves as a ground plane.
2003 Feb 24 9
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2022-30
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT608A 01-02-22
02-02-11
0 5 10 mm
scale
Flanged ceramic package; 2 mounting holes; 2 leads SOT608A
p
A
F
b
D
U2
H
Q
c
1
3
2
D1
E
A
w1AB
MM M
C
q
U
1
C
B
E
1
M M
w
2
UNIT A
mm
Db
7.24
6.99 0.15
0.10 10.21
10.01 10.29
10.03 15.75
14.73 9.91
9.65
4.62
3.76
cU2
0.25 0.5115.24
qw
2
w
1
F
1.14
0.89
U1
20.45
20.19
p
3.30
2.92
Q
1.70
1.35
EE
1
10.21
10.01
inches 0.285
0.275 0.006
0.004 0.402
0.394
D1
10.29
10.03
0.405
0.395 0.405
0.395 0.620
0.580 0.390
0.380
0.182
0.148 0.010 0.0200.600
0.045
0.035 0.805
0.795
0.130
0.115 0.067
0.053
0.402
0.394
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
2003 Feb 24 10
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2022-30
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyother conditionsabovethose giveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythat suchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
2003 Feb 24 11
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2022-30
NOTES
© Koninklijke Philips Electronics N.V. 2003 SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands 613524/03/pp12 Date of release: 2003 Feb 24 Document order number: 9397 750 10921
