FEATURES
For general pur pose applications
This diode featur es ver y low tur n-on vol tage
and fast swit c hing. T hese device s ar e protec ted
M ECHANI CAL DAT A
Case: J E DE C DO - -35,glass case
Weight: Appr o x. 0.13 gram
Symbols
Min. UNITS
100 - - V
V
µA
pF
/W
Thermal resistance junction to ambient
CJ
- - 1.0
s, <2%
F=1mA,Tj=25
@ IF=200mA,Tj=25
Storage temperature range
TSTG
Reverse breakdown voltage @IR=100µ A,Tj=25
Symbols
VBR
IR
BAT41
by a PN junction guard ring against excessiv e
SMALL SIGNAL SCHOTTKY DIODES
VOLTAGE RANGE: 100 V
CURRENT: 100 mA
DO - 35(G LA SS)
GALAXY ELECT RICAL
voltage, such as electrostatic discharges
Pow er dissipation @TA =95
UNITS
Polar ity: Color band denotes cathode end
ABSOLUTE RATINGS
VRRM
IF
IFRM
IFSM
Ptot
TJ
TL
750 1)
-55 ---+ 125
V
mA
mA
100
100 1)
350 1)
mA
mW
Max.Typ.
c-55 ---+ 150
ELECTRICAL CHARACTERISTICS
Junction temperature
Ambient operating temperature range
RθJA
Leakage current @Tj=25
Junction capacitance at VR=1V,f=1MHz
VF
Forw ard voltage @ I
- - 20
- - 20
- - 3001)
Value
100 1)
1) On infinite heatsink with 4mm lead length.
Continuous reverse voltage
Forw ard continuous current @TA=25
Repetitive peak forward current tp≤1s,δ≤0.5
Surge forw ard current @tp≤10ms
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BL
Document Number 0265023 1.
BLGALAXY ELECTRICAL
230
VR=50V @Tj=100
- 0.4 0.45
- - 0.1
2)Pulse test tp<300
0100 200
50
100
0 0.2 0.4 0.6 0.8 1.0 1.2
0.01
0.1
1
10
100
1000
TJ=-40
TJ=125
TJ=25
0 5 10 15 20 25 30
0.01
0.1
1
10
100
1000
TJ=125
100
75
50
25
05 1015 202530
2
4
6
8
10
12
14
FORWARD VOLTAGE,VOLT
AMBIENT TEMPERATURE( ℃ )
REVERSE VOLTAGE, VOLT
FIG. 3 -- TYPICAL REVERSE CHARACTERISTICS FIG.4 -- TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE, VOLT
JUNCTION CAPACITANCE,pF
FORWARD CURRENT ,
REBERSE LEAKAGE CURRENT,
BAT41
FIG.1 -- ADMISSIBLE POWER DISSIPATION VS.
AMBIENT TEMPERATURE FIG. 2--TYPICAL INSTANTANEOUS FORWORD
CHARACTERISTICS
RATINGS AND CHARACTERISTIC CURVES
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2.
Document Number 0265009 BLGALAXY ELECTRICAL
MILLI AMPERES
MICRO AMPERES
