fiAMOSPEC COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for use in general-purpose amplifier and switching PNP NPN applications MJE2955T MJE3055T FEATURES: * Power Dissipation - P, = 75 W @ T, = 25C * DC Current Gain hFE = 20 ~ 100 @1, = 4.0A * VeE(saty = 1.1 V (Max.) @ Io =4.0A, lp = 400 mA 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS MAXIMUM RATINGS 75 WATTS Characteristic Symbol Rating Unit Collector-Emitter Voltage Voeo 60 Vv Collector-Base Voltage Vepo 70 Vv Emitter-Base Voltage Veso : 5.0 Vv Collector Current-Continuous le 10 A Base Current Ip 6.0 A Total, Power Dissipation @T,=25C Py 75 Ww Derate above 25C 0.6 wc Operating and Storage Junction T).Tst C Temperature Range - 55 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PIN 1.BASE 2 : 0 Z coUECTOR Thermal Resistance Junction to Case Reje 1.67 CW tCOLLECTOR(CASE) DIM MILLIMETERS FIGURE -1 POWER DERATING MIN | MAX ~ A 14.68 15.31 Ee B 9.78 | 10.42 x Cc 5.01 6.52 = p | 1306 | 1462 2 E 357 | 407 < F 2.42 3.66 9 G 1.12 1% 5 H 0.72 0.96 4 i 422 | 498 = J 1.14 1.38 a Kk | 220 | 297 a L 0.33 | 055 0 M 248 | 298 0 25 50 75 100 125 150 oO 3.70 3.90 To, TEMPERATURE(C)ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwse noted ) MJE2955T PNP / MJE3055T NPN Characteristic Symbol Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) (1, = 200 mA, I, = 0) Vceo(sus) Collector Cutoff Current (Veg = 30 V, I, = 0) | CEO mA Collector Cutoff Current (Vog = 70 V, Vee(om = 1.5V) ( Veg = 70 V, VeE(om =15V,T.= 150C ) loex Collector Cutoff Current (Veg = 70 V, i, = 0) (Veg = 70 V, Ie = 0, Ty = 150C ) lcBo 1.0 10 Emitter Cutoff Current (Veg =5.0V,1,=0 ) leso 5.0 mA ON CHARACTERISTICS (1) DC Current Gain (lg = 4.0A, Veg = 4.0V) (lg = 10A, Voge = 4.0V) hFE 100 Collector - Emitter Saturation Voltage (lg =4.0A, 1, =0.4A) (lp = 10A, Ip =3.3A) Veg (sat) Base - Emitter On Voltage (le = 4.0 A, Veg = 4.0V) VeE(on) 1.8 DYNAMIC CHARACTERISTICS Current Gain - Bandwidth Product (2) (I, = 500 mA, Veg = 10 V ,f = 500 KHz ) 2.0 MHz (1) Pulse Test: Pulse width = 300 us , Duty Cycle = 2.0% 2)f,= |h, f testMJE2955T PNP / MJE3055T NPN es FIG-2 "ON" VOLTAGE MJE2255T MJESOS5T BE 1 fi Vee(sat) Qicla*10 8 & 5 Vee;sst) Qic/y*10 a $ 2 > > Vee(set @ lop 10 Vee ;set) @ lo/g210 01 02 05 4 2 5 40 0.1 0.2 05 1 2 10 IC , COLLECTOR CURRENT (AMP) / IC , COLLECTOR CURRENT (AMP) FIG-3 ACTIVE-REGION SAFE OPERATING AREA 10 There are two limitation on the power handling ability 100.us of a transistor:average junction temperature and second breakdown safe operating area curves indicate = lo-Vce 5 limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to 5 2 greater dissipation than curves indicate. & The data of FIG-3 is base on Typq=150 C;T is variable C 1 Ty=180C depending on conditions.second breakdown pulse limits are e valid for duty cycles to 10% provided Typigs150C ,At high fee etn Lint case temperatures, thermal limita tion will reduce the power 8 - Thermally Livited T,<28C that can be handled to values less than the limitations 2 imposed by second breakdown. 0.1 5 10 20 40 60 Vee , COLLECTOR EMITTER VOLTAGE (VOLTS) FIG-4 DC CURRENT GAIN hre , DC CURRENT GAIN 5 0.01 0.02 0.05 = 0.1 02 0.5 1 2 5 10 Ie , COLLECTOR CURRENT (AMP)