© 2000 IXYS All rights reserved 1 - 3
VRRM = 800-1600 V
IdAVM = 32 A
Symbol Test Conditions Maximum Ratings
IdAV TH = 85°C, module 28 A
IdAVM ①module 32 A
IFRMS, ITRMS per leg 25 A
IFSM, ITSM TVJ = 45°C; t = 10 ms (50 Hz), sine 300 A
VR = 0 V t = 8.3 ms (60 Hz), sine 330 A
TVJ = TVJM t = 10 ms (50 Hz), sine 270 A
VR = 0 V t = 8.3 ms (60 Hz), sine 300 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 440 A2s
VR = 0 V t = 8.3 ms (60 Hz), sine 455 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 365 A2s
VR = 0 V t = 8.3 ms (60 Hz), sine 370 A2s
(di/dt)cr TVJ = 125°C repetitive, IT = 50 A 150 A/ms
f = 50 Hz, tP = 200 ms
VD = 2/3 VDRM
IG = 0.3 A, non repetitive, IT = 0.5 IdAV 500 A/ms
diG/dt = 0.3 A/ms
(dv/dt)cr TVJ = T(vj)m; VDR = 2/3 VDRM 1000 V/ms
RGK = ¥; method 1 (linear voltage rise)
VRGM 10 V
PGM TVJ = TVJM tp = 30 ms£10 W
IT = 0.5 IdAVM tp = 500 ms£5W
tp = 10 ms £1W
PGAVM 0.5 W
TVJ -40...+125 °C
TVJM 125 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 3000 V~
IISOL £ 1 mA t = 1 s 3600 V~
dSCreep distance on surface 12.7 mm
dAStrike distance in air 9.4 mm
aMax. allowable acceleration 50 m/s2
MdMounting torque (M5) 2-2.5 Nm
(10-32 UNF) 18-22 lb.in.
Weight 35 g
VRSM VRRM Type
VDSM VDRM
VV
900 800 VHFD 29-08io1
1300 1200 VHFD 29-12io1
1500 1400 VHFD 29-14io1
1700 1600 VHFD 29-16io1
Dimensions in mm (1 mm = 0.0394")
Bridge and Freewheeling Diode Features
●Package with DCB ceramic base
plate
●Isolation voltage 3600 V~
●Planar passivated chips
●Blocking voltage up to 1600 V
●Low forward voltage drop
●Leads suitable for PC board soldering
●UL registered E 72873
Applications
●Supply for DC power equipment
●DC motor control
Advantages
●Easy to mount with two screws
●Space and weight savings
●Improved temperature and power
cycling
VHFD 29
Half Controlled
Single Phase Rectifier Bridge
Including Freewheeling Diode and Field Diodes
135
2
6810
© 2000 IXYS All rights reserved 2 - 3
VHFD 29
Symbol Test Conditions Characteristic Values
IR, IDVR = VRRM; VD = VDRM TVJ = TVJM £5mA
TVJ = 25°C£0.3 mA
VT, VFIT, IF = 45 A; TVJ = 25°C£1.6 V
VT0 For power-loss calculations only (TVJ = 125°C) 0.9 V
rT15 mW
VGT VD = 6 V; TVJ = 25°C£1.0 V
TVJ = -40°C£1.2 V
IGT VD = 6 V; TVJ = 25°C£65 mA
TVJ = -40°C£80 mA
TVJ = 125°C£50 mA
VGD TVJ = TVJM;V
D = 2/3 VDRM £0.2 V
IGD TVJ = TVJM;V
D = 2/3 VDRM £5mA
ILIG = 0.3 A; tG = 30 ms; TVJ = 25°C£150 mA
diG/dt = 0.3 A/ms; TVJ = -40°C£200 mA
TVJ = 125°C£100 mA
IHTVJ = 25°C; VD = 6 V; R GK = ¥£100 mA
tgd TVJ = 25°C; VD = 0.5VDRM £2ms
IG = 0.3 A; diG/dt = 0.3 A/ms
tqTVJ = 125°C, IT = 15 A, tP = 300 ms, VR = 100 V typ. 150 ms
Qrdi/dt = -10 A/ms, dv/dt = 20 V/ms, VD = 2/3 VDRM 75 mC
RthJC per thyristor (diode); DC current 1.4 K/W
per module 0.35 K/W
RthJH per thyristor (diode); DC current 2.0 K/W
per module 0.5 K/W
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
① for resistive load
IXYS reserves the right to change limits, test conditions and dimensions.
Symbol Test Conditions Maximum Ratings
IFAV TH = 85°C, per Diode 4 A
IFAVM per diode 4 A
IFRMS per diode 6 A
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 100 A
VR = 0 V t = 8.3 ms (60 Hz), sine 110 A
TVJ = TVJM t = 10 ms (50 Hz), sine 85 A
VR = 0 V t = 8.3 ms (60 Hz), sine 94 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 50 A2s
VR = 0 V t = 8.3 ms (60 Hz), sine 50 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 36 A2s
VR = 0 V t = 8.3 ms (60 Hz), sine 37 A2s
IRVR = VRRM TVJ = TVJM 1mA
TVJ = 25°C 0.15 mA
VFIF = 21 A; TVJ = 25°C 1.83 V
VT0 For power-loss calculations only (TVJ = 125°C) 0.9 V
rT50 mW
RthJC per diode; DC current 4.4 K/W
RthJH per diode; DC current 5.2 K/W
Field Diodes
Fig. 1 Gate trigger range
Fig. 2 Gate controlled delay time tgd
1 10 100 1000
0.1
1
10
IG
VG
mA
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
V
4: PGAV = 0.5 W
5: PGM = 1 W
6: PGM = 10 W
IGD, TVJ = 125°C
4
2
1
5
6
10 100 1000
1
10
100
1000
µs
tgd
TVJ = 25°C
typ. Limit
mA
IG
3
750
© 2000 IXYS All rights reserved 3 - 3
VHFD 29
0.001 0.01 0.1 1
0
40
80
120
160
200
240
23456789110
101
102
103
0.00.51.01.52.0
0
10
20
30
40
50
60
70
0 5 10 15 20 25 30 35
0
20
40
60
80
100
0 204060801001201400
0.001 0.01 0.1 1 10
0.0
0.5
1.0
1.5
2.0
2.5
I2t
IFSM
IF
A
VFtstms
Ptot
W
Id(AV)M
ATamb
ts
ZthJH
K/W
A2s
0 20406080100120
0
5
10
15
20
25
30
35
Id(AV)M
TH
A
V
A
°C°C
TVJ = 45°C
VR = 0 V
Fig. 3 Forward current versus voltage
drop per diode Fig. 4 Surge overload current Fig. 5 I2t versus time per diode
Fig. 6 Power dissipation versus direct output current and ambient temperature Fig. 7 Max. forward current versus
heatsink temperature
Constants for ZthJH calculation:
iR
thi (K/W) ti (s)
1 0.007 0.008
2 0.266 0.05
3 1.127 0.06
4 0.6 0.25
TVJ = 125°C
TVJ = 45°C
TVJ = 125°C
TVJ = 125°C
TVJ = 25°C
typ.
max.
RthHA :
0.5 K/W
1.0 K/W
1.5 K/W
2.0 K/W
3.0 K/W
4.0 K/W
6.0 K/W
50Hz, 80% VRRM
Fig. 8 Transient thermal impedance junction to heatsink
