©2008 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FDP51N25 / FDPF51N25 Rev. B
FDP51N25 / FDPF51N25 250V N-Channel MOSFET
FDP51N25 / FDPF51N25
250V N-Channel MOSFET
Features
• 51A, 250V, RDS(on) = 0.06Ω @VGS = 10 V
• Low gate charge ( typical 55 nC)
• Low Crss ( typical 63 pF)
•Fast switching
•Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
TO-220
FDP Series
GS
DTO-220F
FDPF Series
GS
D
D
G
S
Symbol Parameter FDP51N25 FDPF51N25 Unit
VDSS Drain-Source Voltage 250 V
IDDrain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
51
30
51*
30*
A
A
IDM Drain Current - Pulsed (Note 1) 204 204* A
VGSS Gate-Source voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 1111 mJ
IAR Avalanche Current (Note 1) 51 A
EAR Repetitive Avalanche Energy (Note 1) 32 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PDPower Dissipation (TC = 25°C)
- Derate above 25°C
320
3.7
38
0.3
W
W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TLMaximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds 300 °C
Symbol Parameter FDP51N25 FDPF51N25 Unit
RθJC Thermal Resistance, Junction-to-Case 0.39 3.3 °C/W
RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/WJ
July 2008
UniFET
TM
2www.fairchildsemi.com
FDP51N25 / FDPF51N25 Rev. B
FDP51N25 / FDPF51N25 250V N-Channel MOSFET
Package Marking and Ordering Information
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.68mH, IAS = 51A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 51A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Device Marking Device Package Reel Size Tape Width Quantity
FDP51N25 FDP51N25 TO-220 - - 50
FDPF51N25 FDPF51N25 TO-220F - - 50
Symbol Parameter Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C250 -- -- V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 250μA, Referenced to 25°C-- 0.25 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V
VDS = 200V, TC = 125°C
--
--
--
--
1
10
μA
μA
IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA3.0 -- 5.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = 10V, ID = 25.5A -- 0.048 0.060 Ω
gFS Forward Transconductance VDS = 40V, ID = 25.5A (Note 4) -- 43 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25V, VGS = 0V,
f = 1.0MHz
-- 2620 3410 pF
Coss Output Capacitance -- 530 690 pF
Crss Reverse Transfer Capacitance -- 63 90 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 125V, ID = 51A
RG = 25Ω
(Note 4, 5)
-- 62 135 ns
trTurn-On Rise Time -- 465 940 ns
td(off) Turn-Off Delay Time -- 98 205 ns
tfTurn-Off Fall Time -- 130 270 ns
QgTotal Gate Charge VDS = 200V, ID = 51A
VGS = 10V
(Note 4, 5)
-- 55 70 nC
Qgs Gate-Source Charge -- 16 -- nC
Qgd Gate-Drain Charge -- 27 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 51 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 204 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 51A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0V, IS = 51A
dIF/dt =100A/μs (Note 4)
-- 178 -- ns
Qrr Reverse Recovery Charge -- 4.0 -- μC
3www.fairchildsemi.com
FDP51N25 / FDPF51N25 Rev. B
FDP51N25 / FDPF51N25 250V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
10-1 100101
100
101
102
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
* Notes :
1. 250μs Pulse Test
2. TC = 25oC
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
24681012
100
101
102
150oC
25oC
-55oC
* Notes :
1. VDS = 40V
2. 250μs Pulse Test
ID, Drain Current [A]
VGS, Gate-Source Voltage [V]
0 25 50 75 100 125 150
0.04
0.06
0.08
0.10
0.12
0.14
VGS = 20V
VGS = 10V
* Note : TJ = 25oC
RDS(ON) [Ω], Drain-Source On-Resistance
ID, Drain Current [A]
0.20.40.60.81.01.21.41.61.8
100
101
102
150oC
* Notes :
1. VGS = 0V
2. 250μs Pulse Test
25oC
IDR, Reverse Drain Current [A]
VSD, Source-Drain voltage [V]
10-1 100101
0
2000
4000
6000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
* Note ;
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
0 102030405060
0
2
4
6
8
10
12
VDS = 125V
VDS = 50V
VDS = 200V
* Note : ID = 51A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
4www.fairchildsemi.com
FDP51N25 / FDPF51N25 Rev. B
FDP51N25 / FDPF51N25 250V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area
for FDP51N25 for FDPF51N25
Figure 10. Maximum Drain Current
vs. Case Temperature
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
* Notes :
1. VGS = 0 V
2. ID = 250 μA
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. VGS = 10 V
2. ID = 25.5 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
100101102
10-2
10-1
100
101
102
100 ms
1 ms
10 μs
DC
10 ms
100 μs
Operation in This Area
is Limited by R DS(on)
* Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
25 50 75 100 125 150
0
10
20
30
40
50
60
ID, Drain Current [A]
TC, Case Temperature [oC]
5www.fairchildsemi.com
FDP51N25 / FDPF51N25 Rev. B
FDP51N25 / FDPF51N25 250V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FDP51N25
Figure 11-2. Transient Thermal Response Curve for FDPF51N25
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
* Notes :
1. ZθJC(t) = 0.39 0C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
ZθJC(t), Thermal Response
t1, Square W ave Pulse Duration [sec]
t
1
P
DM
t
2
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
* Notes :
1. ZθJC(t) = 3.3 0C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
ZθJC(t), Thermal Response
t1, Square Wave Pulse Duration [sec]
t
1
P
DM
t
2
6www.fairchildsemi.com
FDP51N25 / FDPF51N25 Rev. B
FDP51N25 / FDPF51N25 250V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
7www.fairchildsemi.com
FDP51N25 / FDPF51N25 Rev. B
FDP51N25 / FDPF51N25 250V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
8www.fairchildsemi.com
FDP51N25 / FDPF51N25 Rev. B
FDP51N25 / FDPF51N25 250V N-Channel MOSFET
Mechanical Dimensions
Dimensions in Millimeters
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TO-220
9www.fairchildsemi.com
FDP51N25 / FDPF51N25 Rev. B
FDP51N25 / FDPF51N25 250V N-Channel MOSFET
Mechanical Dimensions (Continued)
(7.00) (0.70)
MAX1.47
(30°)
#1
3.30 ±0.10
15.80 ±0.20
15.87 ±0.20
6.68 ±0.20
9.75 ±0.30
4.70 ±0.20
10.16 ±0.20
(1.00x45°)
2.54 ±0.20
0.80 ±0.10
9.40 ±0.20
2.76 ±0.20
0.35 ±0.10
ø3.18 ±0.10
2.54TYP
[2.54 ±0.20]
2.54TYP
[2.54 ±0.20]
0.50 +0.10
–0.05
TO-220F
Dimensions in Millimeters
Rev. I35
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FDP51N25 / FDPF51N25 250V N-Channel MOSFET
FDP51N25 / FDPF51N25 Rev. B