2N5401RLRAG - ON SEMICONDUCTOR

December, 2005 − Rev. 1 1Publication Order Number:

2N5400/D

2N5400, 2N5401

Preferred Device

Amplifier Transistors

PNP Silicon

Features

•Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol 2N5400 2N5401 Unit

Collector − Emitter Voltage VCEO 120 150 Vdc

Collector − Base Voltage VCBO 130 160 Vdc

Emitter − Base Voltage VEBO 5.0 Vdc

Collector Current − Continuous IC600 mAdc

Total Device Dissipation

@ TA = 25°C

Derate above 25°C

PD625

5.0 mW

mW/°C

Total Device Dissipation

@ TC = 25°C

Derate above 25°C

PD1.5

12 Watts

mW/°C

Operating and Storage Junction

Temperature Range TJ, Tstg −55 to +150 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum rat ings applied to the device are individual stress limit values (not nor-

mal operating conditions) and are not valid simultaneously. If these limits are ex-

ceeded, device functional operation is not implied, damage may occur and reli-

ability may be affected.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction−to−Ambient RqJA 200 °C/W

Thermal Resistance,

Junction−to−Case RqJC 83.3 °C/W

540x

AYWWG

A = Assembly Location

Y = Year

WW = W ork Week

G= Pb−Free Package

(Note: Microdot may be in either location)

MARKING DIAGRAM

TO−92

CASE 29

STYLE 1

123

Preferred devices are recommended choices for future use

and best overall value.

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

*For a dditional information on our Pb−Free strategy

and soldering details, please download the

ON Semiconductor Soldering and Mounting

Techniques Reference Manual, SOLDERRM/D.

COLLECTOR

BASE

EMITTER

2N5400, 2N5401

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage(1)

(IC = 1.0 mAdc, IB = 0 ) 2N5400

2N5401

V(BR)CEO 120

150 −

−

Vdc

Collector−Base Breakdown Voltage

(IC = 100 mAdc, IE = 0 ) 2N5400

2N5401

V(BR)CBO 130

160 −

−

Vdc

Emitter−Base Breakdown Voltage

(IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 − Vdc

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0) 2N5400

(VCB = 120 Vdc, IE = 0) 2N5401

(VCB = 100 Vdc, IE = 0, TA = 100°C) 2N5400

(VCB = 120 Vdc, IE = 0, TA = 100°C) 2N5401

ICBO −

−

100

nAdc

mAdc

Emitter Cutoff Current

(VEB = 3.0 Vdc, IC = 0) IEBO − 50 nAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 1.0 mAdc, VCE = 5.0 Vdc) 2N5400

2N5401

(IC = 10 mAdc, VCE = 5.0 Vdc) 2N5400

2N5401

(IC = 50 mAdc, VCE = 5.0 Vdc) 2N5400

2N5401

hFE 30

−

180

240

−

Collector−Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

VCE(sat) −

−0.2

0.5

Vdc

Base−Emitter Saturation V oltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

VBE(sat) −

−1.0

1.0

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain — Bandwidth Product

(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) 2N5400

2N5401

fT100

100 400

300

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 6.0 pF

Small−Signal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N5400

2N5401

hfe 30

40 200

200

−

Noise Figure

(IC = 250 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) NF − 8.0 dB

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

2N5400, 2N5401

http://onsemi.com

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (mA)

100

150

200

0.1

h , CURRENT GAIN

0.5 2.0 3.0 100.2 0.3

1.0 5.0

TJ = 125°C

25°C

−55°C

20 30 50 100

VCE = − 1.0 V

VCE = − 5.0 V

Figure 2. Collector Saturation Region

IB, BASE CURRENT (mA)

1.0

0.1 0.5 2.0 100.2 1.0 5.0 20 50

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.005 0.01 0.02 0.05

Figure 3. Collector Cut−Off Region

VBE, BASE−EMITTER VOLTAGE (VOLTS)

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

, COLLECTOR CURRENT (A)μIC

103

0.10.3 0.2

102

101

100

10−1

10−2

10−3

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

IC = 1.0 mA 10 mA 30 mA 100 mA

VCE = 30 V

IC = ICES

TJ = 125°C

75°C

25°C

REVERSE FORWARD

2N5400, 2N5401

http://onsemi.com

Figure 4. “On” Voltages

IC, COLLECTOR CURRENT (mA)

0.4

0.6

0.7

1.0

0.2

Figure 5. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

V, VOLTAGE (VOLTS)

TJ = 25°C

VCE(sat) @ IC/IB = 10

2.5

0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

C, CAPACITANCE (pF)

100

TJ = 25°C

Cibo

Figure 6. Switching Time Test Circuit

VR, REVERSE VOLTAGE (VOLTS)

0.9

0.8

0.5

0.3

0.1

VBE(sat) @ IC/IB = 10

0.3 3.0 30

V, TEMPERATURE COEFFICIENT (mV/ C)°θ

Figure 7. Capacitances

10.2 V

Vin

10 ms

INPUT PULSE

VBB

+8.8 V

100

5.1 k

0.25 mF

Vin 100 1N914

Vout

VCC

−30 V

3.0 k

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

Values Shown are for IC @ 10 mA

0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 1000.3 3.0 30

2.0

1.5

1.0

0.5

−0.5

−1.0

−1.5

−2.0

−2.5

TJ = −55°C to 135°C

qVC for VCE(sat)

qVB for VBE(sat)

Cobo

1.0

2.0

3.0

5.0

7.0

0.2 0.5 1.0 2.0 5.0 10 200.3 3.0

0.7 7.0

t, TIME (ns)

1000

100

200

300

500

700

0.2 0.5 1.0 2.0 5.0 10 200.3 3.0 30 50 100 200

IC, COLLECTOR CURRENT (mA)

Figure 8. Turn−On Time

IC/IB = 10

TJ = 25°C

td @ VBE(off) = 1.0 V

VCC = 120 V

tr @ VCC = 30 V

tr @ VCC = 120 V

t, TIME (ns)

2000

100

200

300

500

700

0.2 0.5 1.0 2.0 5.0 10 200.3 3.0 30 50 100 200

IC, COLLECTOR CURRENT (mA)

Figure 9. Turn−Off Time

1000 tf @ VCC = 120 V

tf @ VCC = 30 V

ts @ VCC = 120 V

IC/IB = 10

TJ = 25°C

2N5400, 2N5401

http://onsemi.com

ORDERING INFORMATION

Device Package Shipping†

2N5400 TO−92 5000 Unit / Bulk

2N5400G TO−92

(Pb−Free) 5000 Unit / Bulk

2N5400RLRP TO−92 2000 Tape & Reel

2N5400RLRPG TO−92

(Pb−Free) 2000 Tape & Reel

2N5401 TO−92 5000 Unit / Bulk

2N5401G TO−92

(Pb−Free) 5000 Unit / Bulk

2N5401RL1 TO−92 2000 Tape & Reel

2N5401RL1G TO−92

(Pb−Free) 2000 Tape & Reel

2N5401RLRA TO−92 2000 Tape & Reel

2N5401RLRAG TO−92

(Pb−Free) 2000 Tape & Reel

2N5401RLRM TO−92 2000 Tape & Ammo Box

2N5401RLRMG TO−92

(Pb−Free) 2000 Tape & Ammo Box

2N5401ZL1 TO−92 2000 Tape & Ammo Box

2N5401ZL1G TO−92

(Pb−Free) 2000 Tape & Ammo Box

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifica-

tions Brochure, BRD8011/D.

2N5400, 2N5401

http://onsemi.com

PACKAGE DIMENSIONS

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

TO−92

CASE 29−11

ISSUE AL NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

SECTION X−X

SEATING

PLANE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.45 5.20

B0.170 0.210 4.32 5.33

C0.125 0.165 3.18 4.19

D0.016 0.021 0.407 0.533

G0.045 0.055 1.15 1.39

H0.095 0.105 2.42 2.66

J0.015 0.020 0.39 0.50

K0.500 −−− 12.70 −−−

L0.250 −−− 6.35 −−−

N0.080 0.105 2.04 2.66

P−−− 0.100 −−− 2.54

R0.115 −−− 2.93 −−−

V0.135 −−− 3.43 −−−

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any

liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental

damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over

time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under

its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,

or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death

may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees,

subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of

personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.

SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMA TION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

2N5400/D

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

P.O. Box 61312, Phoenix, Arizona 85082−1312 USA

Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada

Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

ON Semiconductor Website: http://onsemi.com

Order Literature: http://www.onsemi.com/litorder

For additional information, please contact your

local Sales Representative.