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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDP51N25 / FDPF51N25 N-Channel UniFETTM MOSFET 250 V, 51 A, 60 m Features Description * RDS(on) = 48 m(Typ.) @ VGS = 10 V, ID = 25.5 A UniFETTM MOSFET is Fairchild Semiconductor's high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. * Low Gate Charge (Typ. 55 nC) * Low Crss (Typ. 63 pF) Applications * PDP TV * Lighting * Uninterruptible Power Supply * AC-DC Power Supply D D GD S TO-220 G G D S TO-220F D G S TO-220F Y-formed G S TO-220F LG-formed Absolute Maximum Ratings TC = 25C unless otherwise noted. FDP51N25 Symbol S FDPF51N25 FDPF51N25YDTU FDPF51N25RDTU Parameter Unit VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25 C) - Continuous (TC = 100 C) 51 30 51* 30* A A IDM Drain Current - Pulsed 204 204* A 250 (Note 1) V VGSS Gate-Source voltage 30 V EAS Single Pulsed Avalanche Energy (Note 2) 1111 mJ IAR Avalanche Current (Note 1) 51 A EAR Repetitive Avalanche Energy (Note 1) 32 mJ VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=0.3sec; TC = 25 C) dv/dt Peak Diode Recovery dv/dt PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range -55 to +150 C TL Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds 300 C N/A 2500 4.5 (Note 3) (TC = 25C) - Derate Above 25C V V/ns 320 3.7 38 0.3 W W/C *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol FDP51N25 FDPF51N25 FDPF51N25YDTU FDPF51N25RDTU Unit Parameter RJC Thermal Resistance, Junction-to-Case, Max. 0.39 3.3 C/W RJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 C/W (c)2008 Fairchild Semiconductor Corporation FDP51N25 / FDPF51N25 Rev. 1.8 1 www.fairchildsemi.com FDP51N25 / FDPF51N25 -- N-Channel UniFETTM MOSFET March 2016 Part Number FDP51N25 Top Mark FDP51N25 Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units FDPF51N25 FDPF51N25 TO-220F Tube N/A N/A 50 units FDPF51N25YDTU FDPF51N25 TO-220F (Y-formed) Tube N/A N/A 50 units FDPF51N25RDTU FDPF51N25 TO-220F (LG-formed) Tube N/A N/A 50 units Electrical Characteristics Symbol TC = 25C unless otherwise noted. Parameter Conditions Min. Typ. Max. Unit 250 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A, TJ = 25 C BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C -- 0.25 -- V/C IDSS Zero Gate Voltage Drain Current VDS = 250 V, VGS = 0 V VDS = 200 V, TC = 125C --- --- 1 10 A A IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 25.5 A -- 0.048 0.060 gFS Forward Transconductance VDS = 40 V, ID = 25.5 A -- 43 -- S VDS = 25 V, VGS = 0 V, f = 1 MHz -- 2620 3410 pF -- 530 690 pF -- 63 90 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 125 V, ID = 51 A, VGS = 10 V, RG = 25 (Note 4) VDS = 200 V, ID = 51 A, VGS = 10 V (Note 4) -- 62 135 ns -- 465 940 ns -- 98 205 ns -- 130 270 ns -- 55 70 nC -- 16 -- nC -- 27 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 51 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 204 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 51 A -- -- 1.4 V trr Reverse Recovery Time 178 -- ns Reverse Recovery Charge VGS = 0 V, IS = 51 A, dIF/dt =100 A/s -- Qrr -- 4.0 -- C Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 0.68 mH, IAS = 51 A, VDD = 50 V, RG = 25 , starting TJ = 25C. 3. ISD 51 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C. 4. Essentially independent of operating temperature typical characteristics. (c)2008 Fairchild Semiconductor Corporation FDP51N25 / FDPF51N25 Rev. 1.8 2 www.fairchildsemi.com FDP51N25 / FDPF51N25 -- N-Channel UniFETTM MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ID, Drain Current [A] 2 10 ID, Drain Current [A] 2 10 1 10 o 150 C o 25 C 1 10 o -55 C * Notes : 1. VDS = 40V * Notes : 1. 250s Pulse Test 2. 250s Pulse Test o 2. TC = 25 C 0 10 0 -1 0 10 10 1 10 10 2 4 6 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 10 12 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.14 2 10 IDR, Reverse Drain Current [A] RDS(ON) [], Drain-Source On-Resistance 8 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] 0.12 0.10 VGS = 10V 0.08 VGS = 20V 0.06 o 0.04 1 10 o 150 C o 25 C * Notes : 1. VGS = 0V 2. 250s Pulse Test * Note : TJ = 25 C 0 0 25 50 75 100 125 10 150 0.2 0.4 ID, Drain Current [A] 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 12 6000 Ciss = Cgs + Cgd (Cds = shorted) 10 VGS, Gate-Source Voltage [V] Coss = Cds + Cgd Capacitances [pF] Crss = Cgd 4000 Coss Ciss 2000 * Note ; 1. VGS = 0 V Crss 2. f = 1 MHz VDS = 50V VDS = 125V VDS = 200V 8 6 4 2 * Note : ID = 51A 0 0 -1 10 0 10 1 10 10 20 30 40 50 60 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] (c)2008 Fairchild Semiconductor Corporation FDP51N25 / FDPF51N25 Rev. 1.8 0 3 www.fairchildsemi.com FDP51N25 / FDPF51N25 -- N-Channel UniFETTM MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2. ID = 250 A 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 0.5 2. ID = 25.5 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 o TJ, Junction Temperature [ C] 0 10 * Notes : o 1. TC = 25 C -1 10 10 s 1 ms 10 ms 1 10 100 ms Operation in This Area is Limited by R DS(on) 0 10 DC * Notes : o 1. TC = 25 C -1 10 o 2. TJ = 150 C o 2. TJ = 150 C 3. Single Pulse 3. Single Pulse -2 10 200 100 s 1 ms 10 ms 100 ms DC ID, Drain Current [A] ID, Drain Current [A] 2 10 100 s Operation in This Area is Limited by R DS(on) 150 Figure 9-2. Maximum Safe Operating Area for FDPF51N25 / FDPF51N25YDTU 10 s 2 10 1 100 o Figure 9-1. Maximum Safe Operating Area for FDP51N25 10 50 TJ, Junction Temperature [ C] -2 0 1 10 10 2 10 10 0 10 VDS, Drain-Source Voltage [V] 1 10 2 10 VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 60 ID, Drain Current [A] 50 40 30 20 10 0 25 50 75 100 125 150 o TC, Case Temperature [ C] (c)2008 Fairchild Semiconductor Corporation FDP51N25 / FDPF51N25 Rev. 1.8 4 www.fairchildsemi.com FDP51N25 / FDPF51N25 -- N-Channel UniFETTM MOSFET Typical Performance Characteristics (Continued) D=0.5 10 -1 0.2 0.1 PDM 0.05 t1 0.02 10 -2 t2 * Notes : 0 1. Z JC (t) = 0.39 C/W Max. 0.01 JC ZJC Thermal Response [oC/W] Z (t),(t), Thermal Response Figure 11-1. Transient Thermal Response Curve for FDP51N25 2. Duty Factor, D=t1 /t 2 3. T JM - T C = P DM * Z JC (t) single pulse 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , Square W ave Pulse Duration [sec] (t), Thermal [oC/W] ZJC (t), ThermalResponse Response JC Figure 11-2. Transient Thermal Response Curve for FDPF51N25 / FDPF51N25YDTU D=0.5 0 10 0.2 0.1 PDM 0.05 t1 -1 10 0.02 t2 * Notes : 0 1. ZJC(t) = 3.3 C/W Max. 0.01 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t) single pulse -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Square Wave Pulse Duration [sec] (c)2008 Fairchild Semiconductor Corporation FDP51N25 / FDPF51N25 Rev. 1.8 5 www.fairchildsemi.com FDP51N25 / FDPF51N25 -- N-Channel UniFETTM MOSFET Typical Performance Characteristics (Continued) 50K 200nF 12V FDP51N25 / FDPF51N25 -- N-Channel UniFETTM MOSFET VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 13. Resistive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp tp Time Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms (c)2008 Fairchild Semiconductor Corporation FDP51N25 / FDPF51N25 Rev. 1.8 6 www.fairchildsemi.com FDP51N25 / FDPF51N25 -- N-Channel UniFETTM MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms (c)2008 Fairchild Semiconductor Corporation FDP51N25 / FDPF51N25 Rev. 1.8 7 www.fairchildsemi.com B A 10.36 9.96 B 3.28 3.08 7.00 3.40 3.20 2.66 2.42 0.70 6.88 6.48 1 X 45 B R1.00 1 3 1.47 1.24 R1.00 0.90 0.70 2.14 0.50 M 2.54 2.54 B 2.96 2.56 8.50 7.50 B A B 4.50 3.50 B B 4.90 4.50 NOTES: A. EXCEPT WHERE NOTED CONFORMS TO EIAJ SC91A. B DOES NOT COMPLY EIAJ STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSION AND TOLERANCE AS PER ASME Y14.5-1994. F. DRAWING FILE NAME: TO220N03REV2 16.07 15.67 0.60 0.45 4.80 4.20 A B 10.36 9.96 B 3.28 3.08 7.00 3.40 3.20 2.66 2.42 0.70 6.88 6.48 1 X 45 B 16.00 15.60 1 R0.30 3 2.96 2.56 R0.30 1.47 1.24 10.45 9.45 B 2.14 16.07 15.67 B 10.00 9.00 0.90 0.70 0.50 M 2.54 A B 2.54 B 4.00 MIN B B 4.90 4.50 NOTES: A. EXCEPT WHERE NOTED CONFORMS TO EIAJ SC91A. B DOES NOT COMPLY EIAJ STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSION AND TOLERANCE AS PER ASME Y14.5-1994. F. DRAWING FILE NAME: TO220Q03REV2 0.60 0.45 6.00 4.00 SUPPLIER "B" PACKAGE SHAPE 3.50 10.67 9.65 E SUPPLIER "A" PACKAGE SHAPE 3.40 2.50 16.30 13.90 IF PRESENT, SEE NOTE "D" 16.51 15.42 E 9.40 8.13 E 1 [2.46] 2 3 C 4.10 2.70 14.04 12.70 2.13 2.06 FRONT VIEWS 4.70 4.00 1.62 H 1.42 "A1" 8.65 7.59 SEE NOTE "F" 1.62 1.10 2.67 2.40 1.00 0.55 6.69 6.06 OPTIONAL CHAMFER E 14.30 11.50 NOTE "I" BOTTOM VIEW 3 0.60 0.36 SIDE VIEW 2.85 2.10 2 1 BACK VIEW NOTES: A) REFERENCE JEDEC, TO-220, VARIATION AB B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS COMMON TO ALL PACKAGE SUPPLIERS EXCEPT WHERE NOTED [ ]. D) LOCATION OF MOLDED FEATURE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE) E DOES NOT COMPLY JEDEC STANDARD VALUE. F) "A1" DIMENSIONS AS BELOW: SINGLE GAUGE = 0.51 - 0.61 DUAL GAUGE = 1.10 - 1.45 G) DRAWING FILE NAME: TO220B03REV9 H PRESENCE IS SUPPLIER DEPENDENT I) SUPPLIER DEPENDENT MOLD LOCKING HOLES IN HEATSINK. B A 10.36 9.96 B 3.28 3.08 7.00 3.40 3.20 2.66 2.42 0.70 SEE NOTE "F" SEE NOTE "F" 6.88 6.48 1 X 45 B 16.00 15.60 16.07 15.67 (3.23) B 1 2.14 3 1.47 1.24 2.96 2.56 0.90 0.70 10.05 9.45 0.50 M A 30 0.45 0.25 2.54 B 2.54 B 4.90 4.50 NOTES: A. EXCEPT WHERE NOTED CONFORMS TO EIAJ SC91A. B DOES NOT COMPLY EIAJ STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSION AND TOLERANCE AS PER ASME Y14.5-1994. F. OPTION 1 - WITH SUPPORT PIN HOLE. OPTION 2 - NO SUPPORT PIN HOLE. G. DRAWING FILE NAME: TO220M03REV5 0.60 0.45 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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