A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 °C
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 50 mA 33 V
BVCES IC = 50 mA 60 V
BVCBO IE = 5.0 mA 4.0 V
hFE VCE = 5.0 V IC = 1.0 A 10 100 ---
COB VCB = 28 V f = 1 MHz 67 75 pF
GPe VCE = 28 V POUT = 60 W f =225- 400 MHz 7.8 8.5
GPe
η
ηη
ηC
Ψ
ΨΨ
Ψ
VCE = 28 V POUT = 60 W f = 400 MHz 7.8
55
30:1
10.0
dB
%
---
NPN SILICON RF POWER TRANSISTOR
2N6439
DESCRIPTION:
The ASI 2N6439 is a Com mon
Emitter Device Designed For Large
signal output am plifier stag es in the
225-400 MHz range.
FEATURE S INCLUDE:
• Internal I nput Matching Network
• 30:1 Load VSWR Capability
• All Gold Metalization
MAXI MUM RATINGS
VCB 60 V
PDISS 146 W @ TC = 25 °C
TSTG - 65 °C t o +200 °C
θ
θθ
θJC 1.2 °C/W
PACKAGE STYLE .500 6L FLG
1 = Collector 2 = Base
3 & 4 = Emitter
