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BSS138K — N-Channel Logic Level Enhancement Mode Field Effect Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS138K Rev. 1.3.0 1
May 2013
BSS138K
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching S peed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Pb Free / RoHS Compliant
Green Compound
ESD HBM = 2000 V as per JEDEC A114A; ESD CDM = 2000 V as per JEDEC C101C
Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Note:
1. These ratings are limiting values above which the serviceability of any semiconductor device ma ybe impaired.
Thermal Characteristics
Note:
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.
Package Marking and Ordering Information
Symbol Parameter Value Units
VDSS Drain-Source Voltage 50 V
VGSS Gate-Source Voltage ±12 V
ID Drain Current Continuous 0.22 A
Pulsed 0.88
TJOperating Junction Temperature Range -55 to +150 °C
TSTG Storage Temperature Range -55 to +150 °C
Symbol Parameter Value Units
PDTotal Device Dissipation 350 mW
Derating above TA = 25°C 2.8 mW/°C
RθJA Thermal Resistance, Junction to Ambient(2) 350 °C/W
Device Marking Device Reel Size Tape Width Quantity
SK BSS138K 7” 8 mm 3000 units
S
D
G
SOT - 23
Marking : SK
BSS138K — N-Channel Logic Level Enhancement Mode Field Effect Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS138K Rev. 1.3.0 2
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristic s
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 μA50 V
BVDSS
TJ
Breakdown Voltage
Temperature Coefficient ID = 250 μA, Referenced to 25°C0.11 V/°C
IDSS Zero Gate Voltage Drain Current VDS = 50 V, VGS = 0 V 0.1 μA
IGSS Gate-Body Leakage VGS = ±12 V, VDS = 0 V ±1
μAVGS = ±10 V, VDS = 0 V ±0.5
VGS = ±5 V, VDS = 0 V ±0.05
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA0.6 1.2V
VGS(th)
TJ
Gate Threshold Voltage
Temperature Coefficient ID = 1 mA, Referenced to 25°C-1.4mV/°C
RDS(ON) Static Drain-Source
On-Resistance
VGS = 1.8V, ID = 50 mA, 2.5
ΩVGS = 2.5 V, ID = 50 mA 2.0
VGS = 5V, ID = 50 mA 1.6
ID(ON) On-State Drain Current VGS = 10 V, VDS = 5 V 0.2 A
gFS Forward Transconductance VDS = 10 V, ID = 200 mA 200 mS
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
58
Coss Output Capacita nce 9.75 pF
Crss Reverse Transfer Capacit ance 5.2
RGGate Resistance VDS = 5 V, VGS = 10 mV 281 Ω
Switching Characteristics
tD(ON) Turn- On Delay Ti me
VDD = 30 V, ID = 0.29 A,
VGS = 10 V, RGEN = 6 Ω
5
ns
trTurn-On Rise Time 5
tD(OFF) Turn-Off Delay Time 60
tfTurn-Off Fall Time 35
QgTotal Gate Change VDS = 25 V, ID = 0.2 A,
VGS = 10 V, IG = 0.1 mA
2.4 nCQgs Gate-Source Change 0.5
Qgd Gate-Drain Change 0.5
Drain-Source Diode Characterist ics and Maximum Ratings
Vsd Drain-Source Diode
Forward Voltage VGS = 0 V, IS = 115 mA 1.2 V
BSS138K — N-Channel Logic Level Enhancement Mode Field Effect Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS138K Rev. 1.3.0 3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation wi th Gate
Voltage and Drain Current
Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Gate-Source
Voltage
Figure 5. Transfer Characteristics Figure 6. Gate T h r e s h o ld V a r i a t i o n wi t h Tem pe r a t ur e
0246810
0.0
0.5
1.0
1.5
2.0
2V
3V
4V
5V
VGS = 10V
ID. DRAIN-SOURCE CURRENT(A)
VDS. DRAIN-SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0
0.75
1.00
1.25
1.50
1.75
2.00
(Ω)
9V
8V
5V 6V
10V
7V
4V 4.5V
VGS = 3V
RDS(on),
DRANI-SOURCE ON-RESISTANCE
ID. DRAIN-SOURCE CURRENT(A)
-50 0 50 100 150
0.5
1.0
1.5
2.0
2.5
(Ω)
VDS = 10V
ID = 500 mA
RDS(on)
DRANI-SOURCE ON-RESISTANCE
TJ. JUNCTION TEM PERAT URE(oC)
2.02.53.03.54.04.55.05.56.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS = 10V
75(oC) 125(oC) 150(oC)
25(oC)
TJ = -25(oC)
ID. DRAIN-SOURCE CURRENT(A)
VGS. GATE-SOURCE VOLTAG E (V)
-50 0 50 100 150
0.0
0.5
1.0
1.5
ID = 0.25 mA
ID = 1 mA
VDS = VGS
Vth, Gate-Source Threshold Voltage (V)
TJ. JUNCTION TEMPERATURE(oC)
BSS138K — N-Channel Logic Level Enhancement Mode Field Effect Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS138K Rev. 1.3.0 4
Typical Performance Characteristics (Continue)
Figure 7. Reverse Drain Current Variation with
Diode Forward Voltage and Temperature
0.0 0.2 0.4 0.6 0.8 1.0
1
10
100
-55oC
VGS = 0 V
150oC
25oC
IS Reverse Drain Current, [mA]
VSD, Body Diode Forward Voltage [V]
BSS138K — N-Channel Logic Level Enhancement Mode Field Effect Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS138K Rev. 1.3.0 5
Physical Dimensions
Figure 8. 3LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE)
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obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
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LAND PATTERN
RECOMMENDATION
NOTES: UNLESS OTHERWISE SPECIFIED
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
3
12
SEE DETAIL A
SEATING
PLANE
SCALE: 2X
GAGE PLANE
(0.55)
(0.93)
1.20 MAX
C
0.10
0.00
0.10 C
2.40±0.30
2.92±0.20
1.30+0.20
-0.15
0.60
0.37
0.20 A B
1.90
0.95
(0.29)
0.95
1.40
2.20
1.00
1.90
0.25
0.23
0.08
0.20 MIN
SOT-23
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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