1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating Symbol 2N5400 2N5401 Unit
Collector–Emitter Voltage VCEO 120 150 Vdc
Collector–Base Voltage VCBO 130 160 Vdc
Emitter–Base Voltage VEBO 5.0 Vdc
Collector Current — Continuous IC600 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD625
5.0 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.5
12 Watts
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
q
JA 200 °C/W
Thermal Resistance, Junction to Case R
q
JC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0) 2N5400
2N5401
V(BR)CEO 120
150 —
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0) 2N5400
2N5401
V(BR)CBO 130
160 —
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0) V(BR)EBO 5.0 — Vdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0) 2N5400
(VCB = 120 Vdc, IE = 0) 2N5401
(VCB = 100 Vdc, IE = 0, TA = 100°C) 2N5400
(VCB = 120 Vdc, IE = 0, TA = 100°C) 2N5401
ICBO —
—
—
—
100
50
100
50
nAdc
µAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0) IEBO — 50 nAdc
1. Pulse Test: Pulse Width = 300
m
s, Duty Cycle = 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by 2N5400/D
SEMICONDUCTOR TECHNICAL DATA
*Motorola Preferred Device
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
123
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc) 2N5400
2N5401
(IC = 10 mAdc, VCE = 5.0 Vdc) 2N5400
2N5401
(IC = 50 mAdc, VCE = 5.0 Vdc) 2N5400
2N5401
hFE 30
50
40
60
40
50
—
—
180
240
—
—
—
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat) —
—0.2
0.5
Vdc
Base–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat) —
—1.0
1.0
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) 2N5400
2N5401
fT100
100 400
300
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo — 6.0 pF
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N5400
2N5401
hfe 30
40 200
200
—
Noise Figure
(IC = 250 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) NF — 8.0 dB
1. Pulse Test: Pulse Width = 300
m
s, Duty Cycle = 2.0%.
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
30
100
150
200
0.1
h , CURRENT GAIN
0.5 2.0 3.0 100.2 0.3
20 1.0 5.0
FE
TJ = 125
°
C
25
°
C
–55
°
C
70
50
20 30 50 100
VCE = –1.0 V
VCE = –5.0 V
Figure 2. Collector Saturation Region
IB, BASE CURRENT (mA)
1.0
0.1 0.5 2.0 100.2 1.0 5.0 20 50
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.005 0.01 0.02 0.05
Figure 3. Collector Cut–Off Region
VBE, BASE–EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
, COLLECTOR CURRENT ( A)
µ
IC
103
0.10.3 0.2
102
101
100
10–1
10–2
10–3 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
IC = 1.0 mA 10 mA 30 mA 100 mA
VCE = 30 V
IC = ICES
TJ = 125
°
C
75
°
C
25
°
C
REVERSE FORWARD
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 4. “On” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.7
1.0
0.2
Figure 5. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
0
TJ = 25
°
C
VCE(sat) @ IC/IB = 10
2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
C, CAPACITANCE (pF)
100 TJ = 25
°
C
Cibo
Figure 6. Switching Time Test Circuit
VR, REVERSE VOLTAGE (VOLTS)
0.9
0.8
0.5
0.3
0.1
VBE(sat) @ IC/IB = 10
0.3 3.0 30
V, TEMPERATURE COEFFICIENT (mV/ C)
°θ
Figure 7. Capacitances
10.2 V
Vin
10
µ
s
INPUT PULSE
VBB
+8.8 V
100
RB
5.1 k
0.25
µ
F
Vin 100 1N914
Vout
RC
VCC
–30 V
3.0 k
tr, tf
≤
10 ns
DUTY CYCLE = 1.0%
Values Shown are for IC @ 10 mA
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 1000.3 3.0 30
2.0
1.5
1.0
0.5
0
–0.5
–1.0
–1.5
–2.0
–2.5
TJ = –55
°
C to 135
°
C
θ
VC for VCE(sat)
θ
VB for VBE(sat)
Cobo
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
0.2 0.5 1.0 2.0 5.0 10 200.3 3.0
0.7 7.0
t, TIME (ns)
1000
100
200
300
500
700
10
20
30
50
70
0.2 0.5 1.0 2.0 5.0 10 200.3 3.0 30 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 8. Turn–On Time
IC/IB = 10
TJ = 25
°
C
td @ VBE(off) = 1.0 V
VCC = 120 V
tr @ VCC = 30 V
tr @ VCC = 120 V
t, TIME (ns)
2000
100
200
300
500
700
20
30
50
70
0.2 0.5 1.0 2.0 5.0 10 200.3 3.0 30 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 9. Turn–Off Time
1000 tf @ VCC = 120 V
tf @ VCC = 30 V
ts @ VCC = 120 V
IC/IB = 10
TJ = 25
°
C
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
HSECTION X–X
C
V
D
N
N
X X
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
CASE 029–04
(TO–226AA)
ISSUE AD
6 Motorola Small–Signal Transistors, FETs and Diodes Device Data
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