1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
34
2N4400, 2N4401 General Purpose Transistors
NPN Si-Epitaxial PlanarTransistors NPN
Version 2004-01-20
Power dissipation – Verlustleistung 625 mW
Plastic case TO-92
Kunststoffgehäuse (10D3)
Weight approx. – Gewicht ca. 0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard Pinning
1 = C 2 = B 3 = E Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C)
2N4400, 2N4401
Collector-Emitter-voltage B open VCE0 40 V
Collector-Base-voltage E open VCE0 60 V
Emitter-Base-voltage C open VEB0 6 V
Power dissipation – Verlustleistung Ptot 625 mW 1)
Collector current – Kollektorstrom (dc) IC600 mA
Junction temp. – Sperrschichttemperatur Tj150°C
Storage temperature – Lagerungstemperatur TS- 55…+ 150°C
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
Collector saturation volt. – Kollektor-Sättigungsspannung
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA VCEsat
VCEsat
–
––
–400 mV
750 mV
Base saturation voltage – Basis-Sättigungsspannung
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA VBEsat
VBEsat
750 mV
––
–950 mV
1.2 V
Collector cutoff current – Kollektorreststrom
VCE = 35 V, VEB = 0.4 V ICBV – – 100 nA
Emitter cut-off current – Emitterreststrom
VCE = 35 V, VEB = 0.4 V IEBV – – 100 nA
1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 35
General Purpose Transistors 2N4400, 2N4401
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis
VCE = 1 V, IC = 0.1 mA 2N4401 hFE 20 – –
VCE = 1 V, IC = 1 mA 2N4400
2N4401 hFE
hFE
20
40 –
––
–
VCE = 1 V, IC = 10 mA 2N4400
2N4401 hFE
hFE
40
80 –
––
–
VCE = 1 V, IC = 150 mA 2N4400
2N4401 hFE
hFE
50
100 –
–150
300
VCE = 1 V, IC = 500 mA 2N4400
2N4401 hFE
hFE
20
40 –
––
–
h-Parameters at VCE = 10 V, IC = 1 mA, f = 1 kHz
Small signal current gain
Kleinsignal-Stromverstärkung hfe 40 –500
Input impedance – Eingangs-Impedanz hie 1 kS– 15 kS
Output admittance – Ausgangs-Leitwert hoe 1 µS – 30 µS
Reverse voltage ratio – Spannungsrückwirkg. hre 0.1 *10-4 – 8 *10-4
Gain-Bandwidth Product – Transitfrequenz
VCE = 10 V, IC = 20 mA,
f = 100 MHz 2N4400
2N4401 fT
fT
200 MHz
250 MHz –
––
–
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 – – 6.5 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 2 V, IC = ic = 0, f = 1 MHz CEB0 – – 30 pF
Switching times – Schaltzeiten
turn-on time
ICon = 150 mA
IBon = 15 mA
- IBoff = 15 mA
ton – – 35 ns
delay time td– – 15 ns
rise time tr– – 20 ns
turn-off time toff – – 255 ns
storage time ts– – 225 ns
fall time tf– – 30 ns
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA 200 K/W 1)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren 2N4402, 2N4403
