Oct. 2003
MITSUBISHI <INTELLIGENT POWER MODULES>
PM25CLB120
FLAT-BASE TYPE
INSULATED PACKAGE
PM25CLB120
FEATURE
a) Adopting new 5th generation IGBT (CSTBT) chip, which
performance is improved by 1µm fine rule process.
For example, typical Vce(sat)=1.9V @Tj=125°C
b) I adopt the over-temperature conservation by Tj detection of
CSTBT chip, and error output is possible from all each con-
servation upper and lower arm of IPM.
•3φ 25A, 1200V Current-sense IGBT type inverter
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, short-
circuit, over-temperature & under-voltage (P-Fo available
from upper arm devices)
• Acoustic noise-less 3.7kW class inverter application
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES Dimensions in mm
2.5
22
7.75 98.25
2.5 232323
19.5
71.5
5
50.75
25.75
55
2-φ5.5
17
16
1 0.5
8.5
10.5
27.5
2
1
1.5
2-φ2.5
106
66.5
4-φ2.5
19.75
3.25
7
44
25
17.517.57.5
44
44444444
16
2222
1616
120
1. VUPC
2. UFO
3. UP
4. VUP1
5. VVPC
6. VFO
7. VP
8. VVP1
9. VWPC
10. WFO
11. WP
12. VWP1
13. VNC
14. VN1
15. NC
16. UN
17. VN
18. WN
19. Fo
Terminal code
NP
15
BUVW
91319
MITSUBISHI <INTELLIGENT POWER MODULES>
PM25CLB120
FLAT-BASE TYPE
INSULATED PACKAGE
Oct. 2003
VCES
±IC
±ICP
PC
Tj
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Junction Temperature
VD = 15V, VCIN = 15V
TC = 25°C
TC = 25°C
TC = 25°C (Note-2)
V
A
A
W
°C
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol Parameter Condition Ratings Unit
1200
25
50
116
–20 ~ +150
INTERNAL FUNCTIONS BLOCK DIAGRAM
VFO
IFO
CONTROL PART
V
mA
20
20
Supply Voltage
Input Voltage
Fault Output Supply Voltage
Fault Output Current
Symbol Parameter Condition Ratings Unit
Applied between : VUP1-VUPC
VVP1-VVPC, VWP1-VWPC, VN1-VNC
Applied between : UP-VUPC, VP-VVPC
WP-VWPC, UN • VN • WN-VNC
Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC
FO-VNC
Sink current at UFO, VFO, WFO, FO terminals
20
20
VD
VCIN
V
V
VNUNWPVWP1
WFOVWPC VPVVP1
VFOVVPC UPVUP1
UFOVUPC
NC
NC N W V U P
Fo VNC VN1WN
Gnd In Fo Vcc
Gnd Si Out OT
Gnd In Fo Vcc
Gnd Si Out OT
Gnd In Fo Vcc
Gnd Si Out OT
Gnd In Fo Vcc
Gnd Si Out OT
Gnd In Fo Vcc
Gnd Si Out OT
Gnd In Fo Vcc
Gnd Si Out OT
MITSUBISHI <INTELLIGENT POWER MODULES>
PM25CLB120
FLAT-BASE TYPE
INSULATED PACKAGE
Oct. 2003
ParameterSymbol Supply Voltage Protected by
SC
Supply Voltage (Surge)
Module Case Operating
Temperature
Storage Temperature
Isolation Voltage
Condition
VCC(surge)
TC
Tstg
Viso
Ratings
VCC(PROT) 800
1000
–20 ~ +100
–40 ~ +125
2500
Unit
V
°C
°C
Vrms
V
VD = 13.5 ~ 16.5V, Inverter Part,
Tj = +125°C Start
Applied between : P-N, Surge value
(Note-2)
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
TOTAL SYSTEM
Table1 : TC measurement point of just under the chips.
UP
IGBT
29.0
–7.1
VP WP UN VN WN
FWDi
29.3
1.5
IGBT
65.0
–7.1
FWDi
65.5
2.0
IGBT
85.6
–7.1
FWDi
85.9
2.0
IGBT
37.8
5.1
FWDi
37.5
–4.5
IGBT
55.2
5.1
FWDi
55.7
–4.5
IGBT
75.8
5.1
FWDi
75.3
–4.5
arm
axis X
Y
Bottom view Top view
NP
BUVW
T
C
(Base plate)
(Unit : mm)
0.83
1.36
1.08
1.77
0.038
°C/W
Rth(j-c)Q
Rth(j-c)F
Rth(j-c)Q
Rth(j-c)F
Rth(c-f)
Inverter IGBT (per 1 element) (Note-1)
Inverter FWDi (per 1 element) (Note-1)
Inverter IGBT (per 1 element) (Note-2)
Inverter FWDi (per 1 element) (Note-2)
Case to fin, (per 1 module)
Thermal grease applied
Symbol Condition Unit
Min.
—
—
—
—
—
—
—
—
—
—
Junction to case Thermal
Resistances
THERMAL RESISTANCES
Contact Thermal Resistance
Parameter Limits
Typ. Max.
(Note-1) TC measurement point is just under the chips (Bottom view).
If you use this value, Rth(f-a) should be measured just under the chips.
(Note-2) TC measurement point is as shown below (Top view).
2.3
2.4
3.5
2.5
0.8
1.0
3.0
1.2
1
10
Min. Typ. Max.
Collector-Emitter
Saturation Voltage
Collector-Emitter
Cutoff Current
–IC = 25A, VD = 15V, VCIN = 15V (Fig. 2)
Tj = 25°C
Tj = 125°C
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Parameter
Symbol Condition
VCE(sat)
ICES
VEC
ton
trr
tc(on)
toff
tc(off)
Limits
—
—
—
0.5
—
—
—
—
—
—
1.8
1.9
2.5
1.0
0.5
0.4
2.0
0.7
—
—
Tj = 25°C
Tj = 125°C
FWDi Forward Voltage
Switching T ime
VD = 15V, VCIN = 0V↔15V
VCC = 600V, IC = 25A
Tj = 125°C
Inductive Load (Fig. 3,4)
V
CE
= V
CES
, V
CIN
= 15V
(Fig. 5)
VD = 15V, IC = 25A
VCIN = 0V, Pulsed (Fig. 1) V
mA
V
µs
Unit
MITSUBISHI <INTELLIGENT POWER MODULES>
PM25CLB120
FLAT-BASE TYPE
INSULATED PACKAGE
Oct. 2003
Detect Tj of IGBT chip
–20 ≤ Tj ≤ 125°C
VD = 15V, VCIN = 15V (Note-3)
VD = 15V (Note-3)
–20 ≤ Tj ≤ 125°C, VD = 15V (Fig. 3,6)
VD = 15V (Fig. 3,6)
3.5
—
—
—Mounting part screw : M5
—
Symbol Parameter
Mounting torque
Weight
Condition Unit
N • m
g
Limits
Min. Typ. Max.
2.5
—3.0
340
MECHANICAL RATINGS AND CHARACTERISTICS
VD = 15V, VCIN = 15V
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
UN • VN • WN-VNC
ID
µs
°C
V
mA
ms
25
10
1.8
2.3
—
—
155
—
12.5
—
0.01
15
—
mA
Circuit Current
Input ON Threshold Voltage
Input OFF Threshold Voltage
Short Circuit Trip Level
Short Circuit Current Delay
Time
Over Temperature Protection
Supply Circuit Under-Voltage
Protection
Fault Output Current
Minimum Fault Output Pulse
Width
Vth(ON)
Vth(OFF)
SC
toff(SC)
OT
OTr
UV
UVr
IFO(H)
IFO(L)
tFO
Trip level
Reset level
Trip level
Reset level
CONTROL PART
—
—
1.2
1.7
50
—
135
—
11.5
—
—
—
1.0
Parameter
Symbol Condition Max.
Min. Typ. Unit
Limits
15
5
1.5
2.0
—
0.2
145
125
12.0
12.5
—
10
1.8
(Note-3) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to
protect it.
V
VN1-VNC
VXP1-VXPC
A
RECOMMENDED CONDITIONS FOR USE
Recommended value Unit
Condition
Symbol Parameter V
Applied across P-N terminals
Applied between : VUP1-VUPC, VVP1-VVPC
VWP1-VWPC, VN1-VNC (Note-4)
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
UN • VN • WN-VNC
Using Application Circuit of Fig. 8
For IPM’s each input signals (Fig. 7)
Supply Voltage
Control Supply Voltage
Input ON Voltage
Input OFF Voltage
PWM Input Frequency
Arm Shoot-through
Blocking Time
≤ 800
15.0 ±1.5
≤ 0.8
≥ 9.0
≤ 20
≥ 2.5
VCC
VCIN(ON)
VCIN(OFF)
fPWM
tdead
VDV
V
kHz
µs
(Note-4) With ripple satisfying the following conditions dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak
MITSUBISHI <INTELLIGENT POWER MODULES>
PM25CLB120
FLAT-BASE TYPE
INSULATED PACKAGE
Oct. 2003
PRECAUTIONS FOR TESTING
1. Before appling any control supply voltage (VD), the input terminals should be pulled up by resistores, etc. to their corre-
sponding supply voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.
2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be al-
lowed to rise above VCES rating of the device.
(These test should not be done by using a curve tracer or its equivalent.)
10%
90%
trr Irr
trtd (on)
tc (on) tc (off)
td (off)
V
CIN
Ic V
CE
10%
10% 10%
90%
tf
(ton= td (on) + tr) (toff= td (off) + tf)
P, (U,V,W)
U,V,W, (N) U,V,W, (N)
VD (all)
IN
Fo
Fo
Fo
IN
Fo
VD (all)
V
CIN
(0V)
Ic
V V
P, (U,V,W)
V
CIN
(15V) –
Ic
P
N
N
C
S
C
S
U,V,W
Vcc
Vcc
Ic
Ic
V
D
(all)
V
D
(all)
P
U,V,W
V
CIN
V
CIN
V
CIN
(15V)
V
CIN
(15V)
Fo
Fo
Fig. 3 Switching time and SC test circuit Fig. 4 Switching time test waveform
Fig. 1 V
CE(sat)
Test Fig. 2 V
EC
Test
a) Lower Arm Switching
Signal input
(Upper Arm)
Signal input
(Lower Arm)
Signal input
(Upper Arm)
Signal input
(Lower Arm)
b) Upper Arm Switching
V
CIN
Fig. 7 Dead time measurement point example
Fig. 5 ICES Test
Fig. 6 SC test waveform
SC
Short Circuit Current
toff(SC)
V
D
(all)
U,V,W, (N)
P, (U,V,W) A
Pulse
V
CE
V
CIN
(15V)
Ic
Fo
IN
Fo
0V 1.5V 1.5V
1.5V
2V
2V
2V
0V
t
t
t
dead
t
dead
t
dead
1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value
IPM’ input signal VCIN
(Upper Arm)
IPM’ input signal VCIN
(Lower Arm)
Constant Current
MITSUBISHI <INTELLIGENT POWER MODULES>
PM25CLB120
FLAT-BASE TYPE
INSULATED PACKAGE
Oct. 2003
NOTES FOR STABLE AND SAFE OPERATION ;
•Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the
stray capacity between the input and output wirings of opto-coupler.
•Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.
•Fast switching opto-couplers: tPLH, tPHL ≤ 0.8µs, Use High CMR type.
•Slow switching opto-coupler: CTR > 100%
•Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the
power supply.
•Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N
terminal.
•Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line
and improve noise immunity of the system.
: Interface which is the same as the U-phase
Fig. 8 Application Example Circuit
OUT
Si
OT
OT
OT
OT
OT
OT
GNDGND
In
Vcc
U
V
W
NC
N
P
M
→
IF
+
–
OUT
Si
GNDGND
In
Vcc
OUT
Si
GNDGND
In
Vcc
OUT
Si
GNDGND
In
Fo
Fo
Fo
Fo
Vcc
OUT
Si
GNDGND
In
Fo
Vcc
OUT
Si
GND
GND
In
Fo
Vcc
VWP1
WP
VWPC
UN
VN
VN1
WN
VNC
Rfo
Rfo
Rfo
Rfo
Fo
VVP1
VP
VVPC
≥0.1µ
1kΩ
≥0.1µ
≥0.1µ
20kΩ
20kΩ
20kΩ
≥10µ
≥10µ
≥10µ
20kΩ≥10µ
≥0.1µ
Fo
Fo
Fo
VUP1
UP
VUPC
NC
→
→
IF
IF
IF
5V
→
V
D
V
D
V
D
V
D
