MMST3904
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (MMST3906)
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
• "Green" Device (Notes 3 and 4)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Marking Information: K2N - See Page 4
• Ordering & Date Code Information: See Page 4
• Weight: 0.006 grams (approximate)
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
α 0° 8°
All Dimensions in mm
A
M
JL
ED
BC
H
K
G
BE
C
E
B
C
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current – Continuous (Note 1) IC200 mA
Power Dissipation (Note 1) Pd200 mW
Thermal Resistance, Junction to Ambient (Note 1) RθJA 625 °C/W
Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com./products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30082 Rev. 11 - 2 1 of 4
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© Diodes Incorporated
DS30082 Rev. 11 - 2 2 of 4
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© Diodes Incorporated
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage V(BR)CBO 60 ⎯ V IC = 10μA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO 40 ⎯ V IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO 5.0 ⎯ V IE = 10μA, IC = 0
Collector Cutoff Current ICEX ⎯ 50 nA VCE = 30V, VEB(OFF) = 3.0V
Base Cutoff Current IBL ⎯ 50 nA VCE = 30V, VEB(OFF) = 3.0V
ON CHARACTERISTICS (Note 5)
DC Current Gain hFE
40
70
100
60
30
⎯
⎯
300
⎯
⎯
⎯
IC = 100μA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.25
0.30 V IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base-Emitter Saturation Voltage VBE(SAT) 0.65
⎯
0.85
0.95 V IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo ⎯ 4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance Cibo ⎯ 8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance hie 1.0 10 kΩ
Voltage Feedback Ratio hre 0.5 8.0 x 10-4
Small Signal Current Gain hfe 100 400 ⎯
Output Admittance hoe 1.0 40 μS
VCE = 10V, IC = 1.0mA,
f = 1.0MHz
Current Gain-Bandwith Product fT300 ⎯ MHz VCE = 20V, IC = 10mA,
f = 100MHz
Noise Figure NF ⎯ 5.0 dB VCC = 5.0V, IC = 100μA,
RS = 1.0kΩ, f = 1.0MHz
SWITCHING CHARACTERISTICS
Delay Time td⎯ 35 ns
Rise Time tr⎯ 35 ns VCC = 3.0V, IC = 10mA,
VBE(OFF) = -0.5V, IB1 = 1.0mA
Notes: 5. Short duration pulse test used to minimize self-heating effect.
0
50
100
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERA TURE (°C)
Fi g. 1 Max Pow er Di ss i pa t i on vs .
Am bi ent Tem per at ur e
A
150
200
250
300
350
0
0
5
15
10
0.1 110 100
C
, IN
P
U
T
C
A
P
A
C
I
T
AN
C
E (p
F
)
C , OUTPUT CAPACITANCE (pF)
IBO
OBO
V , COLLECTOR-BASE VOLTAGE (V)
Fig. 2 In put and Ou tp ut Capacit ance vs.
Collector-Base Voltage
CB
1
10
1,000
100
0.1 110 1,000
100
h, D
C
C
U
R
R
EN
T
G
AIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 3 T y pical DC Current Gain vs. Collector Current
C
T = -25°C
A
T = +25°C
A
T = 125°C
A
V = 1.0V
CE
0.01
0.1
1
0.1 1 10 100 1,000
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
(V)
SAT URATION VOLTAGE
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter
Saturation Vo lt age vs. Collector Current
C
0.1
1
10
0.1 1 10 100 1,000
V , BASE-EM I
T
T
E
R
(V)
SATURATION VOLTAGE
BE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 5 Typical Base-Emitter
Saturation V o lt age vs. Collector Current
C
DS30082 Rev. 11 - 2 3 of 4
www.diodes.com MMST3904
© Diodes Incorporated
Ordering Information (Notes 4 and 6)
Device Packaging Shipping
MMST3904-7-F SOT-323 3000/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K2N
YM
K2N = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = Se
p
tembe
r
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012
Code J K L M N P R S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume an y liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages. LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30082 Rev. 11 - 2 4 of 4
www.diodes.com MMST3904
© Diodes Incorporated
