SUMMARY
V(BR)DSS= 40V; RDS(ON)= 0.05 ID= 7A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makesthemidealforhighefficiency,lowvoltage,powermanagementapplications.
FEATURES
•Low on-resistance
•Fast switching speed
•Low threshold
•Low gate drive
•SOT223 package
APPLICATIONS
•DC - DC Converters
•Audio Output Stages
•Relay and Solenoid driving
•Motor control
DEVICE MARKING
•ZXMN
4A06
ZXMN4A06G
ISSUE 1 - MAY 2002
40V N-CHANNEL ENHANCEMENT MODE MOSFET
1
Top View
SOT223
DEVICE REEL
SIZE TAPE
WIDTH QUANTITY
PER REEL
ZXMN4A06GTA 7” 12mm 1000 units
ZXMN4A06GTC 13” 12mm 4000 units
ORDERING INFORMATION
ZXMN4A06G
ISSUE 1 - MAY 2002
2
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS 40 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current VGS=10V; TA=25°C(b)
VGS=10V; TA=70°C(b)
VGS=10V; TA=25°C(a)
ID7.0
5.6
5.0
A
Pulsed Drain Current (c) IDM 22 A
Continuous Source Current (Body Diode) (b) IS5.4 A
Pulsed Source Current (Body Diode)(c) ISM 22 A
Power Dissipation at TA=25°C (a)
Linear Derating Factor PD2.0
16 W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor PD3.9
31 W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) RθJA 62.5 °C/W
Junction to Ambient (b) RθJA 32.2 °C/W
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating 25mm x 25mm FRA PCB, D=0.05 pulse width = 10␮s - pulse width limited by maximum junction temperature.
ZXMN4A06G
ISSUE 1 - MAY 2002
3
110
10m
100m
1
10
Single Pulse
Tamb= 25°C
RDS(on)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
IDDrain Current (A)
VDS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 160
0.0
0.4
0.8
1.2
1.6
2.0
Derating Curve
Temperature (° C)
Max Power Dissipation (W)
100µ 1m 10m100m 1 10 100 1k
0
10
20
30
40
50
60
70 Tamb=25°C
Transient Thermal Impedance
D= 0.5
D= 0.2
D= 0.1
Single Pulse
D= 0.05
Thermal Resistance (° C/W)
Pulse Width (s) 100µ 1m 10m100m 1 10 100 1k
1
10
100
Single Pulse
Tamb=25°C
Pulse Power Dissipation
Pulse Width (s)
Maximum Power (W)
CHARACTERISTICS
ZXMN4A06G
ISSUE 1 - MAY 2002
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V(BR)DSS 40 V ID=250␮A, VGS=0V
Zero Gate Voltage Drain Current IDSS 1␮AV
DS=40V, VGS=0V
Gate-Body Leakage IGSS 100 nA VGS=±20V, VDS=0V
Gate-Source Threshold Voltage VGS(th) 1.0 V ID=250␮A, VDS=V
GS
Static Drain-Source On-State
Resistance (1) RDS(on) 0.050
0.075 ⍀
⍀
VGS=10V, ID=4.5A
VGS=4.5V, ID=3.2A
Forward Transconductance (3) gfs 8.7 S VDS=15V,ID=2.5A
DYNAMIC (3)
Input Capacitance Ciss 770 pF VDS=40V,V
GS=0V,
f=1MHz
Output Capacitance Coss 92 pF
Reverse Transfer Capacitance Crss 61 pF
SWITCHING(2) (3)
Turn-On Delay Time td(on) 2.55 ns VDD =30V, ID=2.5A
RG=6.0⍀,V
GS=10V
(refer to test circuit)
Rise Time tr4.45 ns
Turn-Off Delay Time td(off) 28.61 ns
Fall Time tf7.35 ns
Total Gate Charge Qg18.2 nC VDS=30V,VGS=10V,
ID=2.5A
(refer to test circuit)
Gate-Source Charge Qgs 2.1 nC
Gate-Drain Charge Qgd 4.5 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD 0.8 0.95 V TJ=25°C, IS=2.5A,
VGS=0V
Reverse Recovery Time (3) trr 19.86 ns TJ=25°C, IF=2.5A,
di/dt= 100A/µs
Reverse Recovery Charge (3) Qrr 16.36 nC
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width≤300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN4A06G
ISSUE 1 - MAY 2002
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0.1 1 10
0.1
1
10
0.1 1 10
0.1
1
10
1234
1
10
-50 0 50 100 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
110
0.1
1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.1
1
10
10V
2.5V
4V
VGS
3.5V
2V
3V
Output Characteristics
T= 25°C
VGS
IDDrain Current (A)
VDS Drain-Source Voltage (V)
10V 4V
3V
2V
1.5V
3.5V
2.5V
Output Characteristics
T = 150°C
IDDrain Current (A)
VDS Drain-Source Voltage (V)
Typical Transfer Characteristics
VDS =10V
T = 25°C
T = 150°C
IDDrain Current (A)
VGS Gate-Source Voltage (V) Normalised Curves v Temperature
RDS(on)
VGS = 10V
ID=4.5A
VGS(th)
VGS =V
DS
ID=250uA
Normalised RDS(on) and VGS(th)
Tj Junction Temperature (° C)
10V
4V
2.5V
1.5V
3.5V
3V
2V
On-Resistance v Drain Current
T = 25°C
VGS
RDS(on) Drain-Source On-Resistance (Ω)
IDDrain Current (A)
T = 150°C
T = 25°C
Source-Drain Diode Forward Voltage
VSD Source-Drain Voltage (V)
ISD Reverse Drain Current (A)
TYPICAL CHARACTERISTICS
ZXMN4A06G
ISSUE 1 - MAY 2002
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TYPICAL CHARACTERISTICS
Zetex plc
Fields New Road
Chadderton
Oldham, OL9 8NP
United Kingdom
Telephone (44) 161 622 4422
Fax: (44) 161 622 4420
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY11788
USA
Telephone: (631) 360 2222
Fax: (631) 360 8222
Zetex (Asia) Ltd
3701-04 Metroplaza, Tower 1
Hing Fong Road
Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
These offices are supported by agents and distributors in major countries world-wide.
Thispublicationisissuedtoprovideoutlineinformationonlywhich(unlessagreedbytheCompany inwriting) maynot beused, appliedorreproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
© Zetex plc 2002
ZXMN4A06G
ISSUE 1 - MAY 2002
7
DIM MILLIMETRES DIM MILLIMETRES
MIN MAX MIN MAX
Aᎏ1.80 D 6.30 6.70
A1 0.02 0.10 e 2.30 BASIC
A2 1.55 1.65 e1 4.60 BASIC
b 0.66 0.84 E 6.70 7.30
b2 2.90 3.10 E1 3.30 3.70
C 0.23 0.33 L 0.90 ᎏ
PACKAGE DIMENSIONS
PACKAGE OUTLINE
2.0 min
2.3 1.5 min
(3x)
(3x)
4.6
6.8
3.8 min
2.0 min
PAD LAYOUT DETAILS