2N3054 2N3054A NPN SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3054, 2N3054A types are NPN silicon power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25C) Collector-Base Voltage Collector-Emitter Voltage SYMBOL VCBO VCEV 90 UNITS V 90 V VCER VCEO 60 V 55 V VEBO IC 7.0 V 4.0 A IB PD 2.0 A 25 W PD TJ, Tstg 75 W -65 to +200 C Thermal Resistance (2N3054) JC 7.0 C/W Thermal Resistance (2N3054A) JC 2.33 C/W MAX 1.0 UNITS mA 6.0 mA Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation (2N3054) Power Dissipation (2N3054A) Operating and Storage Junction Temperature ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEV VCE=90V, VEB=1.5V ICEV VCE=90V, VEB=1.5V, TC=150C ICEO IEBO VCE=30V VEB=7.0V BVCEO BVCER IC=100mA IC=100mA, RBE=100 VCE(SAT) VCE(SAT) VBE(ON) IC=500mA, IB=50mA IC=3.0A, IB=1.0A VCE=4.0V, IC=500mA hFE VCE=4.0V, IC=0.5A VCE=4.0V, IC=3.0A 5.0 fT VCE=4.0V, IC=100mA, f=1.0kHz VCE=10V, IC=200mA, f=1.0MHz 3.0 MHz fhfe VCE=4.0V, IC=100mA 30 kHz hFE hfe 500 A 1.0 mA 55 V 60 V 25 25 1.0 V 6.0 V 1.7 V 150 180 R1 (11-June 2012) 2N3054 2N3054A NPN SILICON POWER TRANSISTOR TO-66 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R1 (11-June 2012) w w w. c e n t r a l s e m i . c o m