Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 5 Publication Order Number:
BC807−16LT1/D
1
BC807−16LT1,
BC807−25LT1, BC807−40LT1
General Purpose
Transistors
PNP Silicon
Features
•Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector - Emitter Voltage VCEO −45 V
Collector - Base Voltage VCBO −50 V
Emitter - Base Voltage VEBO −5.0 V
Collector Current − Continuous IC−500 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD225
1.8 mW
mW/°C
Thermal Resistance, Junction−to−Ambient RJA 556 °C/W
Total Device Dissipation Alumina Substrate,
(Note 2) TA = 25°C
Derate above 25°C
PD300
2.4 mW
mW/°C
Thermal Resistance, Junction−to−Ambient RJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −55 to
+150 °C
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
SOT−23
CASE 318
STYLE 6
MARKING
DIAGRAM
3
12
xxxD
12
3
http://onsemi.com
xxx = 5A (BC807−16LT1)
D = Date Code
COLLECTOR
3
1
BASE
2
EMITTER
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
5B1 (BC807−25LT1)
5C (BC807−40LT1)
BC807−16LT1, BC807−25LT1, BC807−40LT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = −10 mA) V(BR)CEO −45 − − V
Collector−Emitter Breakdown Voltage
(VEB = 0, IC = −10 A) V(BR)CES −50 − − V
Emitter−Base Breakdown Voltage
(IE = −1.0 A) V(BR)EBO −5.0 − − V
Collector Cutoff Current
(VCB = −20 V)
(VCB = −20 V, TJ = 150°C)
ICBO −
−−
−−100
−5.0 nA
A
ON CHARACTERISTICS
DC Current Gain
(IC = −100 mA, VCE = −1.0 V) BC807−16
BC807−25
BC807−40
(IC = −500 mA, VCE = −1.0 V)
hFE 100
160
250
40
−
−
−
−
250
400
600
−
−
Collector−Emitter Saturation Voltage
(IC = −500 mA, IB = −50 mA) VCE(sat) − − −0.7 V
Base−Emitter On V oltage
(IC = −500 mA, IB = −1.0 V) VBE(on) − − −1.2 V
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) fT100 − − MHz
Output Capacitance
(VCB = −10 V, f = 1.0 MHz) Cobo − 10 −0.7 pF
DEVICE ORDERING INFORMATION
Device Package Shipping†
BC807−16LT1 SOT−23 3,000 Tape & Reel
BC807−16LT3 SOT−23 10,000 Tape & Reel
BC807−25LT1 SOT−23
BC807−25LT1G SOT−23
(Pb−Free) 3,000 Tape & Reel
BC807−25LT3 SOT−23 10,000 Tape & Reel
BC807−40LT1 SOT−23
BC807−40LT1G SOT−23
(Pb−Free) 3,000 Tape & Reel
BC807−40LT3 SOT−23
BC807−40LT3G SOT−23
(Pb−Free) 10,000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
BC807−16LT1, BC807−25LT1, BC807−40LT1
http://onsemi.com
3
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
hFE, DC CURRENT GAIN
1000
10
−1000−0.1 −10 −100
100
−1.0
VCE = −1.0 V
TA = 25°C
IB, BASE CURRENT (mA)
Figure 2. Saturation Region
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
100
10
1.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Temperature Coefficients
+1.0
IC, COLLECTOR CURRENT
Figure 5. Capacitances
−0.1 −1.0−1.0 −10 −100 −1000
−2.0
−1.0
0
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS
)
V, VOLTAGE (VOLTS)
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
C, CAPACITANCE (pF)
−1.0
−0.8
−0.6
−0.4
−0.2
0
−0.01 −0.1 −10 −100−1.0
−1.0
−0.8
−0.6
−0.4
−0.2
0
−1.0 −10 −1000−100
−10 −100
TJ = 25°C
IC = −10 mA
IC = −100 mA
IC = −300 mA
IC =
−500 mA
TA = 25°C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = −1.0 V
VCE(sat) @ IC/IB = 10
VC for VCE(sat)
VB for VBE
Cob
Cib
BC807−16LT1, BC807−25LT1, BC807−40LT1
http://onsemi.com
4
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−09
ISSUE AI
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
mm
inches
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
DIM
AMIN MAX MIN MAX
MILLIMETERS
0.1102 0.1197 2.80 3.04
INCHES
B0.0472 0.0551 1.20 1.40
C0.0385 0.0498 0.99 1.26
D0.0140 0.0200 0.36 0.50
G0.0670 0.0826 1.70 2.10
H0.0040 0.0098 0.10 0.25
J0.0034 0.0070 0.085 0.177
K0.0180 0.0236 0.45 0.60
L0.0350 0.0401 0.89 1.02
S0.0830 0.0984 2.10 2.50
V0.0177 0.0236 0.45 0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318−01, −02, AND −06 OBSOLETE, NEW STANDARD 318−09.
1
3
2
AL
BS
VG
DH
C
KJ
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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Phone: 81−3−5773−3850
BC807−16LT1/D
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