DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3105 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING (Unit : mm) DESCRIPTION FEATURES 0.16+0.1 -0.06 +0.1 0.65-0.15 0.4 +0.1 -0.05 * Can be driven by a 4 V power source * Low on-state resistance RDS(on)1 = 95 m MAX. (VGS = 10 V, ID = 1.5 A) RDS(on)2 = 135 m MAX. (VGS = 4.5 V, ID = 1.5 A) RDS(on)3 = 150 m MAX. (VGS = 4.0 V, ID = 1.5 A) 3 1.5 2.8 0.2 The 2SK3105 is a switching device which can be driven directly by a 4 V power source. The 2SK3105 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 0 to 0.1 1 2 0.95 0.65 0.95 1.9 0.9 to 1.1 2.9 0.2 1 : Gate 2 : Source 3 : Drain ORDERING INFORMATION PART NUMBER PACKAGE 2SK3105 3-pin Mini Mold (Thin Type) EQUIVALENT CIRCUIT Drain ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGSS 20 V Drain Current (DC) ID(DC) 2.5 A ID(pulse) 10 A PT1 0.2 W PT2 1.25 W Channel Temperature Tch 150 C Storage Temperature Tstg -55 to +150 C Drain Current (pulse) Note1 Total Power Dissipation Total Power Dissipation Note2 Body Diode Gate Gate Protection Diode Source Marking: XA Notes 1. PW 10 s, Duty Cycle 1 % 2. Mounted on FR4 Board, t 5 sec. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13293EJ1V0DS00 (1st edition) Date Published June 1999 NS CP(K) Printed in Japan (c) 1998, 1999 2SK3105 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Cut-off Current I DSS VDS = 30 V, VGS = 0 V -10 A Gate Leakage Current IGSS VGS = 16 V, VDS = 0 V 10 A VGS(off) VDS = 10 V, ID = 1 mA 1.0 1.6 2.5 V | yfs | VDS = 10 V, ID = 1.5 A 1 3.5 RDS(on)1 VGS = 10 V, ID = 1.5 A 56 95 m RDS(on)2 VGS = 4.5 V, ID = 1.5 A 82 135 m RDS(on)3 VGS = 4.0 V, ID = 1.5 A 91 150 m Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = 10 V 211 pF Output Capacitance Coss VGS = 0 V 95 pF Reverse Transfer Capacitance Crss f = 1 MHz 42 pF Turn-on Delay Time td(on) VDD = 10 V 12 ns tr ID = 1.0 A 44 ns VGS(on) = 10 V 28 ns tf RG = 10 15 ns Total Gate Charge QG VDS = 10 V 2.1 nC Gate to Source Charge QGS ID = 2.5 A 0.61 nC Gate to Drain Charge QGD VGS = 4.0 V 0.84 nC Rise Time Turn-off Delay Time td(off) Fall Time Diode Forward Voltage VF(S-D) IF = 2.5 A, VGS = 0 V 0.81 V Reverse Recovery Time trr IF = 2.5 A, VGS = 0 V 15 ns Reverse Recovery Charge Qrr di/dt = 90 A / s 3.7 nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG RG = 10 PG. VGS VGS Wave Form 0 PG. 90 % 90 % ID VGS 0 ID 10 % 0 10 % Wave Form = 1 s Duty Cycle 1 % tr td(on) ton RL 50 VDD 90 % VDD ID 2 VGS(on) 10 % IG = 2 mA td(off) tf toff Data Sheet D13293EJ1V0DS00 2SK3105 TYPICAL CHARACTERISTICS (TA = 25C) FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 ID - Drain Current - A dT - Derating Factor - % 100 60 40 d ite ) im V 10 ID (pulse) ) L 10 (on = DS GS R V (@ PW =1 ms 10 ms 10 0m s ID (DC) 1 5s 0.1 20 Single Pulse Mounted on FR-4 Board of 50mm x 50mm x 1.6mm 0 30 60 90 120 TA - Ambient Temperature - C 0.01 0.1 150 1 10 100 VDS - Drain to Source Voltage - V TRANSFER CHARACTERISTICS GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = 10 V ID - Drain Current - A 1 0.1 TA = 125C 75C 25C -25C 0.01 0.001 0.0001 0.00001 0 2 1 3 4 5 VGS(off) - Gate to Source Cut-off Voltage - V 10 2.0 VDS = 10 V ID = 1 mA 1.8 1.6 1.4 1.2 1.0 -50 0 | yfs | - Forward Transfer Admittance - S VDS = 10V 10 TA = -25 C 25 C 75 C 1 125 C 0.1 0.01 0.01 0.1 1 ID - Drain Current - A 10 RDS(on) - Drain to Source On-State Resistance - m FORWARD TRANSFER ADMMITTANCE Vs. DRAIN CURRENT 100 50 100 150 Tch - Channel Temperature - C VGS - Gate to Sorce Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 150 VGS = 4.0 V TA = 125C 75C 100 25C -25C 50 0.01 Data Sheet D13293EJ1V0DS00 0.1 1 10 ID - Drain Current - A 3 150 VGS = 4.5 V TA = 125C 75C 100 25C -25C 50 0.01 1 0.1 10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 150 ID = 1.5 A VGS = 4.0 V 4.5 V 100 10 V 50 0 -50 0 Tch 50 100 - Channel Temperature -C 150 RDS(on) - Drain to Source On-State Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS (on) - Drain to Source On-state Resistance - m RDS (on) - Drain to Source On-state Resistance - m RDS(on) - Drain to Source On-State Resistance - m 2SK3105 Ciss 100 Coss Crss 10 td(on), tr, td(off), tf - Swwitchig Time - ns Ciss, Coss, Crss - Capacitance - pF TA = 125C 75C 25C 50 -25C 0 0.01 1 0.1 10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 200 ID = 1.5 A 150 100 50 0 4 0 8 12 100 10 16 20 tr td(off) tf td(on) 10 100 VDS - Drain to Source Voltage - V 4 VGS = 10 V SWITCHING CHARACTERISTICS f = 1 MHz VGS = 0V 1 100 VGS - Gate to Source Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Data Sheet D13293EJ1V0DS00 VDD = 10V VGS(on) = 10V RG = 10 1 0.1 1 ID - Drain Current - A 10 2SK3105 SOURCE TO DRAIN DIODE FORWARD VOLTAGE DYNAMIC INPUT CHARACTERISTICS 10 VGS - Gate to Source Voltage - V 1 0.1 0.01 0.4 0.6 0.8 1.0 ID = 2.5 A 8 VDD = 10 V 6.0 V 6 4 2 0 1.2 0 1 2 3 4 5 Qg - Gate Charge - nC VF(S-D) - Source to Drain Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - C/W IF - Source to Drain Current - A 10 Single Pulse Without Board 100 Mounted on 250 mm x 35 m Copper Pad Connected to Drain Electrode in 50 mm x 50 mm x 1.6 mm FR-4 Board 2 10 1 0.001 0.01 0.1 1 10 100 1000 PW - Pulse Width - S Data Sheet D13293EJ1V0DS00 5 2SK3105 [MEMO] 6 Data Sheet D13293EJ1V0DS00 2SK3105 [MEMO] Data Sheet D13293EJ1V0DS00 7 2SK3105 * The information in this document is subject to change without notice. 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