www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 81865
2Rev. 1.2, 15-Feb-11
4N32, 4N33
Vishay Semiconductors Optocoupler, Photodarlington
Output, High Gain, with Base
Connection
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Notes
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(1) Indicates JEDEC registered values.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage VR3V
Forward current IF60 mA
Power dissipation Pdiss 100 mW
Derate linearly from 55 °C 1.33 mW/°C
OUTPUT
Collector emitter breakdown voltage BVCEO 30 V
Emitter base breakdown voltage BVEBO 8V
Collector base breakdown voltage BVCBO 50 V
Emitter collector breakdown voltage BVECO 5V
Collector (load) current IC100 mA
Power dissipation Pdiss 150 mW
Derate linearly 2mW/°C
COUPLER
Total dissipation Ptot 250 mW
Derate linearly 3.3 mW/°C
Isolation test voltage (between emitter 1 s VISO 5300 VRMS
Leakage path 7 mm min.
Air path 7 mm min.
Isolation resistance VIO = 500 V, Tamb = 25 °C RIO 1012
VIO = 500 V, Tamb = 100 °C RIO 1011
Storage temperature Tstg - 55 to + 150 °C
Operating temperature Tamb - 55 to + 100 °C
Lead soldering time (1) at 260 °C 10 s
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 50 mA VF1.25 1.5 V
Reverse current VR = 3 V IR0.1 100 μA
Capacitance VR = 0 V CO25 pF
OUTPUT
Collector emitter breakdown voltage (1) IC = 100 μA, IF = 0 BVCEO 30 V
Collector base breakdown voltage (1) IC = 100 μA, IF = 0 BVCBO 50 V
Emitter base breakdown voltage (1) IC = 100 μA, IF = 0 BVEBO 8V
Emitter collector breakdown voltage (1) IC = 100 μA, IF = 0 BVECO 510 V
Collector emitter leakage current VCE = 10 V, IF = 0 ICEO 1 100 nA
IC = 0.5 mA, VCE = 5 V hFE 13
COUPLER
Collector emitter saturation voltage VCEsat 1V
Coupling capacitance 1.5 pF