Document Number: 81865 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com
Rev. 1.2, 15-Feb-11 1
Optocoupler, Photodarlington Output, High Gain,
with Base Connection
4N32, 4N33
Vishay Semiconductors
DESCRIPTION
The 4N32 and 4N33 are optically coupled isolators with a
gallium arsenide infrared LED and a solicon photodarlington
sensor.
Switching can be achieved while maintaining a high degree
of isolation between driving and load circuits.
These optocouplers can be used to replace reed and
mercury relays with advantages of long life, high speed
switching and elimination of magnetic fields.
FEATURES
Very high current transfer ratio, 500 % min.
High isolation resistance, 1011 typical
Standard plastic DIP package
Compliant to RoHS Directive to 2002/95/EC
and in accordance WEEE 2002/96/EC
AGENCY APPROVALS
UL1577, file no. E52744 system code H
DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5
(pending), avialable with option 1
BSI IEC60950; IEC60065
•FIMKO
Notes
Additional options may be possible, please contact sales office.
(1) Also available in tubes, do not put T on the end.
i179005_1
1
2
3
6
5
4
B
C
E
A
C
NC
V
DE
i179005
ORDERING INFORMATION
4N3#-X0## T
PART NUMBER PACKAGE OPTION TAPE AND
REEL
AGENCY CERTIFIED/PACKAGE CTR (%)
UL, BSI, FIMKO 500 500
DIP-6 4N32 4N33
DIP-6, 400 mil, option 6 4N32-X006 -
SMD-6, option 7 4N32-X007T (1) 4N33-X007T (1)
SMD-6, option 9 4N32-X009T (1) 4N33-X009T (1)
VDE, UL, BSI, FIMKO 500 500
DIP-6 4N32-X001 4N33-X001
SMD-6, option 7 4N32-X017T 4N33-X017T (1)
> 0.1 mm
10.16 mm
> 0.7 mm
7.62 mm
DIP
Option 7
Option 6
Option 9
www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 81865
2Rev. 1.2, 15-Feb-11
4N32, 4N33
Vishay Semiconductors Optocoupler, Photodarlington
Output, High Gain, with Base
Connection
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Notes
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(1) Indicates JEDEC registered values.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage VR3V
Forward current IF60 mA
Power dissipation Pdiss 100 mW
Derate linearly from 55 °C 1.33 mW/°C
OUTPUT
Collector emitter breakdown voltage BVCEO 30 V
Emitter base breakdown voltage BVEBO 8V
Collector base breakdown voltage BVCBO 50 V
Emitter collector breakdown voltage BVECO 5V
Collector (load) current IC100 mA
Power dissipation Pdiss 150 mW
Derate linearly 2mW/°C
COUPLER
Total dissipation Ptot 250 mW
Derate linearly 3.3 mW/°C
Isolation test voltage (between emitter 1 s VISO 5300 VRMS
Leakage path 7 mm min.
Air path 7 mm min.
Isolation resistance VIO = 500 V, Tamb = 25 °C RIO 1012
VIO = 500 V, Tamb = 100 °C RIO 1011
Storage temperature Tstg - 55 to + 150 °C
Operating temperature Tamb - 55 to + 100 °C
Lead soldering time (1) at 260 °C 10 s
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 50 mA VF1.25 1.5 V
Reverse current VR = 3 V IR0.1 100 μA
Capacitance VR = 0 V CO25 pF
OUTPUT
Collector emitter breakdown voltage (1) IC = 100 μA, IF = 0 BVCEO 30 V
Collector base breakdown voltage (1) IC = 100 μA, IF = 0 BVCBO 50 V
Emitter base breakdown voltage (1) IC = 100 μA, IF = 0 BVEBO 8V
Emitter collector breakdown voltage (1) IC = 100 μA, IF = 0 BVECO 510 V
Collector emitter leakage current VCE = 10 V, IF = 0 ICEO 1 100 nA
IC = 0.5 mA, VCE = 5 V hFE 13
COUPLER
Collector emitter saturation voltage VCEsat 1V
Coupling capacitance 1.5 pF
Document Number: 81865 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com
Rev. 1.2, 15-Feb-11 3
4N32, 4N33
Optocoupler, Photodarlington
Output, High Gain, with Base
Connection
Vishay Semiconductors
Note
As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Normalized Non-Saturated and Saturated CTRCE vs.
LED Current
Fig. 2 - Normalized Non-Saturated and Saturated Collector Emitter
Current vs. LED Current
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Current transfer ratio VCE = 10 V, IF = 10 mA CTR 500 %
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Turn-on time VCC = 10 V, IC = 50 mA ton s
Turn-off time IF = 200 mA, RL = 180 toff 100 μs
SAFETY AND INSULATION RATINGS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Climatic classification
(according to IEC 68 part 1) 55/100/21
Comparative tracking index CTI 175 399
VIOTM 8000 V
VIORM 890 V
PSO 700 mW
ISI 400 mA
TSI 175 °C
Creepage distance Standard DIP-6 7 mm
Clearance distance Standard DIP-6 7 mm
Creepage distance 400 mil DIP-6 8 mm
Clearance distance 400 mil DIP-6 8 mm
Insulation thickness,
reinforced rated per IEC 60950 2.10.5.1 0.4 mm
i4n32-33_02
0.1 1 10 100 1000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VCE = 5 V
IF - LED Current (mA)
NCTRCE - Normalized CTRCE
VCE = 5 V
IF = 10 mA
TA = 25 °C
Normalized to:
VCE = 1 V
i4n32-33_03
100
10.1
0.001
0.01
0.1
1
10
IF - LED Current (mA)
NICE - Normalized ICE
10
VCE = 5 V
IF = 10 mA
TA = 25 °C
Normalized to: VCE = 5 V
VCE = 1 V
www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 81865
4Rev. 1.2, 15-Feb-11
4N32, 4N33
Vishay Semiconductors Optocoupler, Photodarlington
Output, High Gain, with Base
Connection
Fig. 3 - Normalized Collector Base Photocurrent vs.
LED Current
Fig. 4 - Non-Saturated and Saturated hFE vs.
Base Current
Fig. 5 - Low to High Propagation Delay vs.
Collector Load Resistance and LED Current
Fig. 6 - High to Low Propagation Delay vs.
Collector Load Resistance and LED Current
Fig. 7 - Switching Waveform and Switching Schematic
i4n32-33_04
0.1 1 10 100
0.001
0.01
0.1
1
10
IF = LED Current (mA)
NICB - Normalized ICB
VCB = 3.5 V
IF = 10 mA
TA = 25 °C
Normalized to:
i4n32-33_05
0.01 0.1 1 10 100
0
2000
4000
6000
8000
10 000
VCE = 5 V
VCE = 1 V
Ib - Base Current (µA)
hFE - Forward Transfer Gain
TA = 25 °C
i4n32-33_06
0101520
0
20
40
60
80
TA = 25 °C, VCC = 5 V
VTH = 1.5 V
IF - LED Current (mA)
tpLH - Low/High Propagation
Delay (µs)
1 kΩ
5
220 Ω
470 Ω
100 Ω
i4n32-33_07
0101520
0
5
10
15
20
IF - LED Current (mA)
TA = 25 °C
VCC = 5 V
VTH = 1.5 V
tpHL - High/Low Propagation
Delay (µs)
1 kΩ
100 Ω
5
i4n32-33_08
IF
tR
VO
tD
tStF
tPHL
tPLH
VTH = 1.5 V
RL
VCC
IF
VO
Document Number: 81865 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com
Rev. 1.2, 15-Feb-11 5
4N32, 4N33
Optocoupler, Photodarlington
Output, High Gain, with Base
Connection
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
DIP-6 Package Dimensions
PACKAGE MARKING
Notes
Example marking for 4N32-X017T.
Only options 1, and 7 reflected in the package marking.
The VDE logo is only marked on option 1 parts.
Tape and reel suffix (T) is not part of the package marking.
i178004
0.25 typ.
2.95 ± 0.5
3.555 ± 0.255
0.8 min.
7.62 typ.
0.85 ± 0.05
2.54 typ.
1 min.
0.5 ± 0.05
6.4 ± 0.1
8.6 ± 0.1
Pin one ID
6
5
4
12
3
18°
3° to 9°
7.62 to 8.81
4° typ.
ISO method A
1.2 ± 0.1
21764-18
4N32
-X017
V YWW H 68
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Revision: 13-Jun-16 1Document Number: 91000
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