TO-92 Plastic-Encapsulate Transistors 4 Q~ 2801213 /2SC1213A TRANSISTOR(NPN) FEATURES oga _ TO-92 | 1.EMITTER | 2.COLLECTOR (Geiiactot-base voltage ! Viaryceo: 2901213 : 35V 3.BASE | 28C1213A : 50V 4 ; 3 tin }and storage junction temperature range Tu,Tstg: -55C to + 150 ELECTRICAL CHARACTERISTICS (Tamb=25C unless otherwise specified) 2801213 35 Collector-base breakdown voitage ViaR)cBO Ic= 10h A, fe=0 Vv 28C01213A 50 2801213 35 Collector-emitter breakdown voltage ViBRICEO Ic= 1 mA, ia=0 Vv 28C1213A 50 Emitter-base breakdown voltage V(BR)EBO le= 10 A, Ic=0 4 Vv Collector cut-off current Icao Vcs= 20 V, le=0 0.5 nA hrect) Vce= 3 V, Ic= 10 mA 60 320 DC current gain Hre(2) Vce= 3 V, Ic= 500 mA 10 Collector-emitter saturation voltage VcEsat Ic= 150 mA, le= 15 mA 0.6 Vv Base-emitter voltage Vee Vee= 3 V, c= 10 MA 0.64 Vv CLASSIFICATION OF heeqn Rank B Cc D Range 60-120 100-200 160-320 20Typical Characteristics 2801213 2SC1213A Maximum Collector Dissipation Curve Typical Output Characteristics (1) _ 600 100 1.00 z 0 oe ea S 400 2 0.6 g - Q o 0.5 g S E 2 N\ 2 40 4 $ IN 8 a. = 8 IN 8 20 0.2 6 \ 2 a Oo 0 50 100 150 0 2 4 6 8 10 Ambient Temperature Ta (C) Collector to Emitter Voltage Vc_ (V) Typical Output Characteristics (2) DC Current Transfer Ratio vs. 500 p72 9 Collector Current 8 140 7? gm g 1a | fee 3 = 4 s Ta = 25C -3 3 100 = 300 & ee : = 80 S500 a 8 F 60 8 5 8 100 sp nA. 5 40 ~ [te = mw 5 =0 a 20 0 2 4 6 8 10 0 Collector to Emitter Voltage Voge (V) 2 5 10 20 50 100 200 500 Collector Current Io (mA) 21