®
TBA820M
1.2W AUDIO AMPLIFIER
DESCRIPTION
The TBA820M is a monolithic integrated audio
amplifier in a 8 lead dual in-line plastic package. It
is intended for use as low frequency class B po wer
amplifier with wide range of supply voltage: 3 to
16V, in portable radios, cassette recorders and
players etc. Main features are: minimum working
supply voltage of 3V, low quiescent current, low
number of e xternal components, good ripple rejec-
tion, no cross-over distortion, low power dissipa-
tion.
Output power: Po = 2W at 12V/8Ω, 1.6W at 9V/4Ω
and 1.2W at 9V/8Ω.
September 2003
Minidip
ORDERING NUMBER: TBA820M
Symbol Parameter Value Unit
VsSupply voltage 16 V
IoOutput peak current 1.5 A
Ptot P ow er dissipatio n at Tamb = 50°C1W
T
stg, TjStorage and junction temperature -40 to 150 °C
ABSOLUTE MAXIMUM RATINGS
TEST AND A PPLICATION CIRCUITS
Figure 1. Circuit diagram with load connected to the
supply voltage Figure 2. Cir cuit diagram w ith load connected
to ground
* Capacitor C6 must be used when high ripple
rejection is requested.
1/6
Symbol Parameter Value Unit
Rth-j-amb Thermal resistance junction-ambient max 100 °C/W
THER MA L DATA
2/6
PIN CONNECTION (top vi ew)
SCHE MATIC DIAGRAM
TBA820M
Symbol Parameter Test conditions Min. Typ. Max. Unit
VsSupply voltage 3 16 V
VoQuiescent output voltage (pin 5) 4 4.5 5 V
IdQuiescent drain current 4 12 mA
IbBias current (pin 3) 0.1 µA
PoOutput power d = 10%
Rf = 120Ω
Vs = 12V
Vs = 9V
Vs = 9V
Vs = 6V
Vs = 3.5V
f = 1 kHz
RL = 8Ω
RL = 4Ω
RL = 8Ω
RL = 4Ω
RL = 4Ω
0.9
2
1.6
1.2
0.75
0.25
W
W
W
W
W
Ri Input resistance (pin 3) f = 1 kHz 5 MΩ
B Frequency response (-3 dB) RL = 8Ω
C5 = 1000 µF
Rf = 120Ω
CB = 680 pF 25 to 7,000 Hz
C
B
= 220 pF 25 to 20,000
d Distortion Po = 500 mW
RL = 8Ω
f = 1 kHz
Rf = 33Ω 0.8 %
R
f
= 120Ω 0.4
GvVoltage gain (open loop) f = 1 kHz RL = 8Ω 75 dB
GvVoltage gain (closed loop) RL = 8ΩRf = 33Ω 45 dB
f = 1 kHz Rf = 120Ω 34
eNInput noise voltage (*) 3 µV
iNInput noise current (*) 0.4 nA
S + N
N
Signal to noise ratio (*) Po = 1.2W
RL = 8Ω
Gv = 34 dB
R1 = 10KΩ 80 dB
R1 = 50 kΩ 70
SVR Supply voltage rejection
(test circuit of fig. 2) RL = 8Ω
f(ripple) = 100 Hz
C6 = 47 µF
Rf = 120Ω
42 dB
ELECTRICAL CHARACTERISTICS (Refer t o the test circuits Vs = 9V, Tamb = 25 °C unless otherwise
specified)
(*) B = 22 Hz to 22 KHz
3/6
TBA820M
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Figure 3. Output power vs.
supply voltage Figure 4. Harmonic distortion
vs. output power Figure 5. Power dissipation
and efficiency vs. output
power
Figure 6. Maximum power
dissipation (sine wave
operation)
Figure 7. Suggested value of
CB vs. RfFigure 8. Frequency res-
ponse
Figure 9. Harmonic distortion
vs. frequency Figure 10. Supply voltage
rejection (Fig. 2 cir cuit) Figure 11. Quiescent current
vs. supply voltage
TBA820M
OUTLINE AND
MECHANICAL DATA
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 3.32 0.131
a1 0.51 0.020
B 1.15 1.65 0.045 0.065
b 0.356 0.55 0.014 0.022
b1 0.204 0.304 0.008 0.012
D 10.92 0.430
E 7.95 9.75 0.313 0.384
e2.54 0.100
e3 7.62 0.300
e4 7.62 0.300
F 6.6 0.260
I 5.08 0.200
L 3.18 3.81 0.125 0.150
Z 1.52 0.060
Minidip
5/6
TBA820M
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Information furnished is believed to be accurate and reliable. Howev er , S TMicroelectronics assumes no responsibility f o r th e con seq ue nces o f
use of s uch information nor for any infr i ngem ent of patents or ot her ri ghts of third par ties wh ich m ay result from its use. No license i s granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in lif e support de vices or systems without e xpress written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2003 STMicroelectronics - All rights reserved
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TBA820M
