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August 12.2010-Rev.00
PJSD03W~PJSD36W
PJSD 05W Marking 05W
Parameter Symbol Conditions Min. Typical Max. Units
Reverse Stand-Off Voltage VRWM ---5V
Reverse Breakdown Voltage VBR I BR=1mA 6 - 7.2 V
Reverse Leakage Current I RVR=5V - - 10 μA
Clamping Voltage(8/20 μs) VCI PP=1A - - 9.8 V
Off State Junction Capacitance CJ0Vdc Bias=f=1MHz - 300 - pF
Off State Junction Capacitance CJ5V dc B i as=f=1MHz - 100 - pF
PJSD 12W Marking 12W
Parameter Symbol Conditions Min. Typical Max. Units
Reverse Stand-Off Voltage V
RWM
---12V
Reverse Breakdown Voltage V
BR
I
BR
=1mA 13.3 - 15 V
Reverse Leakage Current I
R
V
R
=12V --1μA
Clamping Voltage(8/20 μs) V
C
I
PP
=1A - - 19 V
Off State Junction Capacitance C
J
0Vdc B ias=f=1MHz - 130 - pF
Off State Junction Capacitance C
J
5Vdc B ias=f=1MHz - 50 - pF
PJSD 08W Marking 08W
Parameter Symbol Conditions Min. Typical Max. Units
Reverse Stand-Off Voltage V
RWM
---8V
Reverse Breakdown Voltage V
BR
I
BR
=1mA 8.5 - 10 V
Reverse Leakage Current I
R
V
R
=8V - - 10 μA
Clampi ng Voltage(8/20 μs) V
C
I
PP
=1A - - 13.4 V
Off State Junction Capacitance C
J
0Vdc Bias=f=1MHz - 150 - pF
Off State Junction Capacitance C
J
5Vdc Bias=f=1MHz - 80 - pF
PJSD 03W Marking 03W
Parameter Symbol Conditions Min. Typical Max. Units
Reverse Stand-Off Voltage VRWM ---3.0V
Reverse Breakdown Voltage VBR I BR=1mA 4 - 5.0 V
Reverse Leakage Current I RVR=3.0V - - 125 μA
Clamping Voltage(8/20 μs) VCI PP=1A - - 6.5 V
Off State Junction Capacitance CJ0Vdc Bias=f=1MHz - 450 - pF
Off State Junction Capacitance CJ5Vdc Bias=f=1MHz - 150 - pF