PAGE . 1
August 12.2010-Rev.00
PJSD03W~PJSD36W
VOLTAGE POWER3~36 Volts 350 Watts
SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS
• 350 Watts peak pules power( tp=8/20μs)
• Small package for use in portable electronics
• Suitable replacement for MLV’S in ESD protection applications
• Low clamping voltage and leakage current
• In compliance with EU RoHS 2002/95/EC directives
MAXIMUM RATINGS AND ELECTRICAL CHATACTERISTICS
• Case: SOD-323 plastic
• Termin als : Solderable per MIL-STD-750,Method 2026
• Polarity : Color band cathode
• Apporx. Weight: 0.0001 ounce, 0.0041 gram
APPLICATIONS
FEATURES
ABSOLUTE MAXIMUM RA TING
Rating Symbol Value Units
P eak Pulse P o wer (tp=8/20 μs) P
PK
350 W
ES D Voltage V
ESD
25 KV
Operating Temperature T
J
-50 to 150
O
C
Storage Temperature T
STG
-50 to 150
O
C
12
Cathode Anode
PAGE . 2
August 12.2010-Rev.00
PJSD03W~PJSD36W
PJSD 05W Marking 05W
Parameter Symbol Conditions Min. Typical Max. Units
Reverse Stand-Off Voltage VRWM ---5V
Reverse Breakdown Voltage VBR I BR=1mA 6 - 7.2 V
Reverse Leakage Current I RVR=5V - - 10 μA
Clamping Voltage(8/20 μs) VCI PP=1A - - 9.8 V
Off State Junction Capacitance CJ0Vdc Bias=f=1MHz - 300 - pF
Off State Junction Capacitance CJ5V dc B i as=f=1MHz - 100 - pF
PJSD 12W Marking 12W
Parameter Symbol Conditions Min. Typical Max. Units
Reverse Stand-Off Voltage V
RWM
---12V
Reverse Breakdown Voltage V
BR
I
BR
=1mA 13.3 - 15 V
Reverse Leakage Current I
R
V
R
=12V --1μA
Clamping Voltage(8/20 μs) V
C
I
PP
=1A - - 19 V
Off State Junction Capacitance C
J
0Vdc B ias=f=1MHz - 130 - pF
Off State Junction Capacitance C
J
5Vdc B ias=f=1MHz - 50 - pF
PJSD 08W Marking 08W
Parameter Symbol Conditions Min. Typical Max. Units
Reverse Stand-Off Voltage V
RWM
---8V
Reverse Breakdown Voltage V
BR
I
BR
=1mA 8.5 - 10 V
Reverse Leakage Current I
R
V
R
=8V - - 10 μA
Clampi ng Voltage(8/20 μs) V
C
I
PP
=1A - - 13.4 V
Off State Junction Capacitance C
J
0Vdc Bias=f=1MHz - 150 - pF
Off State Junction Capacitance C
J
5Vdc Bias=f=1MHz - 80 - pF
PJSD 03W Marking 03W
Parameter Symbol Conditions Min. Typical Max. Units
Reverse Stand-Off Voltage VRWM ---3.0V
Reverse Breakdown Voltage VBR I BR=1mA 4 - 5.0 V
Reverse Leakage Current I RVR=3.0V - - 125 μA
Clamping Voltage(8/20 μs) VCI PP=1A - - 6.5 V
Off State Junction Capacitance CJ0Vdc Bias=f=1MHz - 450 - pF
Off State Junction Capacitance CJ5Vdc Bias=f=1MHz - 150 - pF
PAGE . 3
August 12.2010-Rev.00
PJSD03W~PJSD36W
PJSD 24W Marking 24W
Parameter Symbol Conditions Min. Typical Max. Units
Reverse Stand-Off Voltage VRWM ---24V
Reverse Breakdown Voltage VBR I BR=1mA 26.6 - 30 V
Reverse Leakage Current I RVR=24V --1μA
Clamping Voltage(8/20 μs) VCI PP=1A - - 43 V
Off State Junction Capacitance CJ0Vdc Bias=f=1MHz - 80 - pF
Off State Junction Capacitance CJ5V dc B i as=f=1MHz - 10 - pF
PJSD 36W Marking 36W
Parameter Symbol Conditions Min. Typical Max. Units
Reverse Stand-Off Voltage VRWM ---36V
Reverse Breakdown Voltage VBR I BR=1mA 39.9 - 45 V
Reverse Leakage Current I RVR=36V --1μA
Clamping Voltage(8/20 μs) VCI PP=1A - - 60 V
Off State Junction Capacitance CJ0Vdc Bias=f=1MHz - 30 - pF
Off State Junction Capacitance CJ5V dc B i as=f=1MHz - 1 - pF
PJSD 15W Marking 15W
Parameter Symbol Conditions Min. Typical Max. Units
Reverse Stand-Off Voltage VRWM ---15V
Reverse Breakdown Voltage VBR I BR=1mA 16.7 - 20 V
Reverse Leakage Current I RVR=15V --1μA
Clamping Voltage(8/20 μs) VCI PP=1A - - 24 V
Off State Junction Capacitance CJ0Vdc Bias=f=1MHz - 120 - pF
Off State Junction Capacitance CJ5Vdc Bias=f=1MHz - 30 - pF
PAGE . 4
August 12.2010-Rev.00
PJSD03W~PJSD36W
0.01 110 100 1000 10000
10000
1000
100
10
t -Pulse Duration- s
d
m
0510 15 20 25 30
120
100
80
60
40
20
0
T-Time- sm
02550
75 100 125 150
100
80
60
40
20
0
T -Lead Temperature- C
L
O
0123456
400
300
200
100
0
V =Reverse Voltage-Volts
R
320W,8/20 s Waveformm
P -Peak Pulse Current-Watts
PP
I -Peak Pulse Current-% of I
PP PP
t=tI /2
dPP
Peak Pulse Power
8/20 sm
Average Power
e
-t
t
f
Peak Value I
PP
TEST
WAVEFORM
PARAMETERS
t
t
f=8 s
d=20 s
m
m
%Of Rated Power
C-Capacitance-pF
FIG. 1- Pulse Wave Form
FIG. 1- Pulse Wave Form
FIG. 3-Peak Pulse Power vs Pulse Time
FIG. 3-Peak Pulse Power vs Pulse Time
FIG. 4-Typical Reverse Voltage vs Capacitance
FIG. 4-Typical Reverse Voltage vs Capacitance
FIG. 2-Power Derating Curve
FIG. 2-Power Derating Curve
PAGE . 5
August 12.2010-Rev.00
LEGAL STATEMENT
Copyright PanJit International, Inc 2011
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 5K per 7" plastic Reel
PJSD03W~PJSD36W