© 2018 IXYS CORPORATION, All Rights Reserved DS100873B(6/18)
X3-Class HiPERFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXFA38N30X3
IXFP38N30X3
VDSS = 300V
ID25 = 38A
RDS(on)
50m
Features
International Standard Packages
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 300 V
VGS(th) VDS = VGS, ID = 1mA 2.5 4.5 V
IGSS VGS = 20V, VDS = 0V 100 nA
IDSS VDS = VDSS, VGS = 0V 25 A
TJ = 125C 500 A
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 34 50 m
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 300 V
VDGR TJ= 25C to 150C, RGS = 1M300 V
VGSS Continuous 20 V
VGSM Transient 30 V
ID25 TC= 25C38A
IDM TC= 25C, Pulse Width Limited by TJM 60 A
IATC= 25C19A
EAS TC= 25C 400 mJ
dv/dt IS IDM, VDD VDSS, TJ 150°C 20 V/ns
PDTC= 25C 240 W
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
FCMounting Force (TO-263) 10..65 / 2.2..14.6 N/lb
MdMounting Torque (TO-220) 1.13 / 10 Nm/lb.in
Weight TO-263 2.5 g
TO-220 3.0 g
G = Gate D = Drain
S = Source Tab = Drain
TO-263 (IXFA)
G
D (Tab)
S
TO-220 (IXFP)
D (Tab)
S
GD
Preliminary Technical Information
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA38N30X3
IXFP38N30X3
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
ISVGS = 0V 38 A
ISM Repetitive, pulse Width Limited by TJM 152 A
VSD IF = IS, VGS = 0V, Note 1 1.4 V
trr 90 ns
QRM 330 nC
IRM 7.4 A
IF = 19A, -di/dt = 100A/μs
VR = 100V
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 20 34 S
RGi Gate Input Resistance 1.9
Ciss 2240 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 330 pF
Crss 1.3 pF
Co(er) 130 pF
Co(tr) 520 pF
td(on) 19 ns
tr 23 ns
td(off) 60 ns
tf 14 ns
Qg(on) 35 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 10 nC
Qgd 11 nC
RthJC 0.52 C/W
RthCS TO-220 0.50 C/W
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10 (External)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
TO-220 Outline
1 - Gate
2,4 - Drain
3 - Source
E1
E A
D1
D
Q
L1
oP
H1
A1
L
A2
D2
e c
e1
e1 3X b2
e 3X b
EJECTOR
PIN
TO-263 Outline
1 - Gate
2,4 - Drain
3 - Source
C2
A
H
1
b
D
E
D1
E1
b2
L2
L1
23
4
L3
A2
A1
e
ce
0
0.43 [11.0]
0.66 [16.6]
0.06 [1.6]
0.10 [2.5]
0.20 [5.0]
0.34 [8.7]
0.12 [3.0]
© 2018 IXYS CORPORATION, All Rights Reserved
IXFA38N30X3
IXFP38N30X3
Fig. 1. Output Characteristics @ TJ = 25
o
C
0
5
10
15
20
25
30
35
40
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
5V
Fig. 3. Output Characteristics @ TJ = 125
o
C
0
5
10
15
20
25
30
35
40
00.511.522.533.54
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
5V
4V
7V
6V
Fig. 4. RDS(on) Normalized to ID = 19A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 38A
I
D
= 19A
Fig. 5. RDS(on) Normalized to ID = 19A Value vs.
Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0 102030405060708090100110
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 2. Extended Output Characteristics @ TJ = 25
o
C
0
20
40
60
80
100
120
0 5 10 15 20 25 30 35
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
6V
8V
7V
5V
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
- Degrees Centigrade
BV
DSS
/ V
GS(th)
- Normalized
BV
DSS
V
GS(th)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA38N30X3
IXFP38N30X3
Fig. 7. Maximum Drain Current vs. Case Temperature
0
5
10
15
20
25
30
35
40
45
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 9. Transconductance
0
10
20
30
40
50
60
70
0 5 10 15 20 25 30 35 40 45 50 55 60 65
I
D
- Amperes
g
f s
- Siemens
25
o
C
125
o
C
T
J
= - 40
o
C
V
DS
= 10V
Fig. 10. Forward Voltage Drop of Intrinsic Diode
0
20
40
60
80
100
120
140
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V
SD
- Volts
I
S
- Amperes
T
J
= 25
o
C
T
J
= 125
o
C
Fig. 11. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 150V
I
D
= 19A
I
G
= 10mA
Fig. 12. Capacitance
1
10
100
1000
10000
1 10 100 1000
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 8. Input Admittance
0
10
20
30
40
50
60
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125
o
C
25
o
C
- 40
o
C
V
DS
= 10V
© 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_38N30X3(23G-S301) 12-15-17
IXFA38N30X3
IXFP38N30X3
Fig. 15. Maximum Transient Thermal Impedance
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- K / W
Fig. 14. Forward-Bias Safe Operating Area
0.01
0.1
1
10
100
1 10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150
o
C
T
C
= 25
o
C
Sin
g
le Pulse
1ms
100μs
R
DS(
on
)
Limi
t
10ms
DC
25μs
Fig. 13. Output Capacitance Stored Energy
0
1
2
3
4
5
6
0 50 100 150 200 250 300
V
DS
- Volts
E
OSS
- MicroJoules
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