SILICON P LASTIC POWER TRANSISTOR PNP MJE2955T 10A 75W Technical Data ...designed for general-purpose switching and amplifier application. F DC Current Gain - h FE = 20 - 100 @ IC = 4Adc F Collector-Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4Adc F Excellent Safe Operating Area F TO-220 Package MAXIMUM RATINGS Rating Symbol Value Unit Collector- Emitter Voltage V CEO 60 Vdc Collector - Base Voltage Emitter Base Voltage Collector Current - Continuos V CB V EB IC 70 5 10 Vdc Vdc Adc Base Current - Continuos IB 6 Adc Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage junction Temperature Range PD Tj,Tstg 75 0.6 -65 to +150 Watts W/C C Symbol Max. Unit THERMAL CHARACTERISTICS Characteristic Thermal resistance junction to case R thjc 1.67 C/W ELECTRICAL CHARACTERISTICS :[ Tc = 25 Characteristic Symbol * OFF CHARACTERISTICS : Collector-Emitter Sustaining Voltage (1) VCEO(sus) [ Ic =200 mAdc, IB = 0 ] Collector Cutoff Current ICBO [ VCB = 70 Vdc, IE=0 ] [VCB=70Vdc,IE=0,TC=1501/4C] Collector Cutoff Current ICE0 [ VCE = 30 Vdc, IB = 0 ] Collector Cutoff Current [ VCE = 70 Vdc, VBE(off) = 1.5 Vdc ] [VCE=70Vdc,VBE(off)=1.5Vdc,TC=1501/4C] Emitter Cutoff Current [ VBE = 5.0 Vdc , Ic = 0 ] * ON CHARACTERISTICS (1): DC Current Gain [ Ic = 4.0 Adc , VCE = 4.0 Vdc ] [ Ic = 10 Adc , VCE = 4.0 Vdc ] Collector-Emitter Saturation Voltage [ Ic = 4.0 Adc , IB = 400 mAdc ] [ Ic = 10 Adc , IB = 3.3 Adc ] Base-Emitter on Voltage [ Ic = 4.0 Adc , VCE= 4.0. VDC ] SECOND BREAKDOWN Second Breakdown Collector current With Base Forward Biased [VCE=37.5Vdc, t = 1.0 s Nonrepetitive] DYNAMIC CHARACTERISTICS : Current Gain - Bandwidth Product [ Ic = 0.5Adc , VCE=10 Vdc , f=500kHz ] * C unless otherwise noted ] Min Typ Max 60 Unit Vdc 1.0 0.70 mAdc mAdc ICEX 1.0 mAdc IEBO 5.0 mAdc hFE 20 5.0 100 VCE(sat) VBE(on) 1.1 8.0 Vdc 1.8 Vdc 1s/b 2 Adc fT 2.0 MHz (1) Pulse Test : Pulse Width <300s , Duty Cycle < 2.0%