JANTXV2N3440 - MICROCHIP TECHNOLOGY

2N3439 thru 2N3440

Available on

commercial

versions

NPN LOW POWER SIL ICON

TRANSISTOR

Qualified per MIL-PRF-19500/368

Qualified Levels:

JAN, J AN TX,

JANTXV and JAN S

DESCRIPTION

Th is family of high-frequency, epit axial planar transis tor s feature low saturati on voltage.

These devices are al so available in TO-39 an d low profi le U4 and UA packaging. Microsemi

als o of fers numerous other transi stor pr oducts to meet hi gher and lower power ratings with

various switching speed requirem ents in both through-hole and sur fac e-mount packages.

TO-39 (TO-205AD)

Package

Also available in:

TO-5 package

(long leaded)

2N3439L – 2N3440L

U4 package

(surface mount)

2N3439U4 – 2N3440U4

UA package

(surface mount)

2N3439UA - 2N3440UA

Important: For the la test information, visi t our website http://www.microsemi.com.

FEATURES

• JEDEC registered 2N3439 through 2N3440 series.

• JAN, JANTX, JA NTXV, and JANS qualifications are available per MIL-PRF-19500/368.

• RoHS compliant versions available (commercial grade only).

• VCE(sat) = 0.5 V @ IC = 50 mA.

• Turn-On time ton = 1.0 µs max @ IC = 20 mA, IB1 = 2.0 mA.

• Turn-Off time toff = 10 µs max @ IC = 20 mA, IB1 = -IB2 = 2.0 mA.

APPLI CAT IONS / BENEF ITS

• General purpose transistors for medium power applications requiring high frequency switching and

low package profile.

• Military and other high-reliability applications.

MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

MSC – Lawrence

6 Lake Street,

Lawrence, MA 01841

Tel: 1-800-446-1158 or

(978) 620-2600

Fax: (978) 689-0803

MSC – Ireland

Gort Road Business Park,

Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044

Fax: +353 (0) 65 6822298

Website:

www.microsemi.com

Parameters / Test Conditions Symbol 2N3439 2N3440 Unit

Collector-Em itter Volta g e VCEO 350 250 V

Collector-Base Vol tage

CBO

450

300

Emitter-Base Voltage VEBO 7.0 V

Collector Current IC 1.0 A

Total Power Dissipation

@ T A = +25°C

(1)

@ T C = +25°C (2) PD 0.8

5.0 W

Operating & Storage Junction Temperature Range

, T

stg

-65 to +200

°C

Notes: 1. Derate linearly @ 4.57mW/°C for TA > + 25°C.

2. Derate linearly @ 28.5mW/°C for TC > + 25°C

2N3439 thru 2N3440

M ECHANI CAL and PACKAGING

• CASE: Hermetically sealed, kovar base, nickel cap.

• TERMINALS: Tin/lead solder dip or RoHS compliant pure tin (commercial grade only) plate over gold.

• MARKING: Part number, date code, manufacturer’s ID.

• POLARITY: NPN (see package outl ine).

• WEIGHT: A pproximately 1.064 grams .

• See Package Dimensions on last page.

PART NOMENCLATURE

JAN 2N3439 (e3)

Reliability Level

JAN = JAN Level

JANTX = JANTX Level

JANTXV = JANTXV Level

JANS = JANS Level

Blank = Commercial

JEDEC type number

(see Electrical Characteristics

table)

RoHS Compliance (available

on commercial grade only)

e3 = RoHS compliant with pure

tin plate

e4 = RoHS compliant with gold

plate

Blank = non-RoHS compliant

SYMBOLS & DEFI NITIONS

Symbol

Definition

Cobo

Common-bas e open-c irc uit output c apacitance.

ICEO

Collect or cutoff curr ent, bas e open.

ICEX

Collect or cutoff curr ent, c i r cuit between base and emi tter.

IEBO

Emitter cut off c ur r ent, c ollec tor open.

hFE

Common-emi tter st ati c forward current transfer ratio.

VCEO

Collector-emitter v olt age, base open.

VCBO

Collector-emitter v olt age, emitter open.

VEBO

Emitter-base vo l tage, c ollec tor open.

2N3439 thru 2N3440

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

OFF CHARACTERISTICS

Paramete r s / Test Condi tions

Symbol

Min.

Max.

Unit

Collector-Emi tter Breakdown Vol tage

V(BR)CEO

350

250

= 10 mA

RBB1 = 470 Ω; VBB1 = 6 V

L = 25 mH (min) ; f = 30 – 60 Hz 2N3439

2N3440

Collector-Emi tter C utoff Curr ent

ICEO

2.0

2.0 µA

= 300 V

VCE = 200 V 2N3439

2N3440

Emitter-Base Cutoff Curr ent

VEB = 7.0 V

IEBO 10 µA

Collector-Emi tter C utoff Curr ent

ICEX

5.0

µA

= 450 V, V

= -1.5 V

VCE = 300 V, VBE = -1.5 V

2N3439

2N3440

Collector-Bas e C utoff Curr ent

ICBO

2.0

5.0

µA

= 360 V

VCB = 250 V

VCB = 450 V

VCB = 300 V

2N3439

2N3440

2N3439

2N3440

ON CHARACTERISTI CS (1)

Parameters / T est Conditions Symbol Min. Max. Unit

Forward-Cur rent Transfer Rati o

IC = 20 mA, VCE = 10 V

IC = 2.0 m A, VCE = 10 V

IC = 0.2 m A, VCE = 10 V hFE

160

Collector-Emitter Saturation Voltage

IC = 50 mA, IB = 4.0 mA VCE(sat) 0.5 V

Base-Emi tter Saturation Vol tage

IC = 50 mA, IB = 4.0 mA VBE(sat) 1.3 V

DYNAMIC CHARACTERISTI CS

Paramete r s / Test Condi tions

Symbol

Min.

Max.

Unit

Magnitude of Common Emi tter Small-Signa l Short-

Circuit Forward Cu rrent Transfer Ratio

IC = 10 mA, VCE = 10 V, f = 5 .0 MHz |hfe| 3.0 15

Forward C ur r ent Trans fer Ratio

IC = 5.0 mA, VCE = 10 V, f = 1.0 kHz hfe 25

O utput Capacitance

VCB = 10 V, IE = 0, 10 0 kHz ≤ f ≤ 1.0 MHz Cobo 10 pF

I nput C apacitanc e

VCB = 5.0 V, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 75 pF

(1) Pulse Test: Pul se Width = 300 µs, duty cycle ≤ 2.0%.

2N3439 thru 2N3440

ELECTRICAL CHARACTERISTICS (TA = + 25°C, unless otherwise not ed) continued

SWITCHING CHARACTERISTICS

Paramete r s / Test Condi tions Symbol Min. Max. Unit

Turn-On Ti me

VCC = 200 V; IC = 20 mA, IB1 = 2.0 mA ton

1.0 µs

Turn-O ff Ti m e

VCC = 200 V; IC = 20 mA, IB1 = -IB2 = 2.0 mA toff

10 µs

SAFE OPERATING AREA (See graph below and al so reference test method 3053 of

MIL-STD-750.)

DC Te sts

TC = +2 5 °C, 1 Cycle, t = 1.0 s

Test 1

VCE = 5.0 V, IC = 1.0 A

B oth Types

Test 2

VCE = 350 V, IC = 14 mA

2N3439

Test 3

VCE = 250 V, IC = 20 mA

2N3440

VCE – Col lector to Emitter Vol tage ( V)

Max i mum Safe Operating gr aph ( continuous dc )

– Collector Current (mA)

2N3439 thru 2N3440

GRAPHS

TC (oC) (Case)

FIGURE 1

Temperature-Power Derating Curve

NOTES: Thermal Resistance Junction to Case = 30.0 oC/W

Ma x F inish-Alloy Temp = 175.0 oC

.110-5 .110-4 .110-3 .110-2 .110-1 0.1 1 10 100

TIME (s)

FIGURE 2

Maximum Ther mal Impedance

NOTE: TC = +25 °C, PT = 5.0 W, thermal resistance Rθ JC = 30 °C /W, stee l.

DC Operation Maximum Rating (W)

THETA (oC/W)

2N3439 thru 2N3440

PACKAGE DIM ENSIONS

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Beyond r (radius) maxi mum, TW shall be held for a minimum length of .011 (0.28 mm).

4. Dimension TL measured from maximum HD.

5. Body contour optional within zone defined by HD, CD, and Q.

6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.

7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating pl ane shall be within .007 inch (0.18 mm)

radius of true posi tion (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by

direct methods or by gauging procedure.

8. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter i s uncontrolled in

and beyond LL minimum.

9. All three lead s.

10. The collector shall be internally connected to the case.

11. Dimension r (radius) applies to both inside corners of tab.

12. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.

13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.

14. For transistor types 2N3439 and 2N3440 (TO-39) , dimension LL = .5 inch (12.70 mm) min. a nd .750 inch (19.05 mm) max .

Dimensions

Symbol

Inches

Millimeters

Note

Min

Max

Min

Max

.305

.335

7.75

8.51

.240

.260

6.10

6.60

.335

.370

8.51

9.40

.200 TP

5.08 TP

.016

.019

0.41

0.48

8,9

See note 14

.016

.019

0.41

0.48

8,9

L1 .050 1.27 8,9

L2 .250 6.35 8,9

.100

2.54

.030

0.76

.029

.045

0.74

1.14

3,4

.028

.034

0.71

0.86

.010

0.25

45° TP