IXFK44N50P - IXYS Corporation - Datasheet.Company

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 175 °C 500 V

VDGR TJ= 25°C to 175°C; RGS = 1 MΩ500 V

VGSM Transient ±40 V

VGSM Continuous ±30 V

ID25 TC= 25°C44A

IDM TC= 25°C, pulse width limited by TJM 132 A

IAR TC= 25°C44A

EAR TC= 25°C55mJ

EAS TC= 25 °C 1.7 J

dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns

TJ≤ 150°C, R G = 10 Ω

PDTC= 25°C 650 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TL1.6 mm (0.062 in.) from case for 10 s 3 00 °C

Maximum tab temperature for soldering 260 °C

for 10s

MdMounting torque(TO-247) 1.13/10 Nm/lb.in.

Weight TO-247 6 g

TO-268 5 g

TO-264 10 g

G = Gate D = Drain

S = Source TAB = Drain

DS99364(03/05)

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

VDSS VGS = 0 V, ID = 250 µA 500 V

VGS(th) VDS = VGS, ID = 4 mA 3.0 5.0 V

IGSS VGS = ±30 VDC, VDS = 0 ±10 nA

IDSS VDS = VDSS 25 µA

VGS = 0 V TJ = 125°C 500 µA

RDS(on) VGS = 10 V, ID = 0.5 ID25 140 mΩ

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

PolarHVTM

HiPerFET

Power MOSFET

Advance Technical Information

N-Channel Enhancement

ModeAvalanche Rated

Fast Intrinsic Diode

Features

zInternational standard packages

zUnclamped Inductive Switching (UIS)

rated

zLow package inductance

- easy to drive and to protect

Advantages

zEasy to mount

zSpace savings

zHigh power density

IXFH 44N50P

IXFT 44N50P

IXFK 44N50P

VDSS = 500 V

ID25 = 44 A

RDS(on) < 140 mΩΩ

ΩΩ

Ω

trr < 200 ns

TO-247 AD (IXFH)

(TAB)

TO-268 (IXTT)

GSD (TAB)

S

GD(TAB)

TO-264 (IXTK)

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFH44N50P IXFT 44N50P

IXFK 44N50P

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

Min. Typ. Max.

gfs VDS= 20 V; ID = 0.5 ID25, pulse test 32 S

Ciss 5440 pF

Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 639 pF

Crss 40 pF

td(on) 25 ns

trVGS = 10 V, VDS = 0.5 VDSS, ID = ID25 27 ns

td(off) RG = 3 Ω (External) 70 ns

tf18 ns

Qg(on) 98 nC

Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 35 nC

Qgd 30 nC

RthJC 0.19 K/W

RthCK (TO-247) 0.21 K/W

(TO-264) 0.15 K/W

Source-Drain Diode Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions Min. typ. Max.

ISVGS = 0 V 44 A

ISM Repetitive 132 A

VSD IF = IS, VGS = 0 V, 1.5 V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

trr IF = 22 A, 200 ns

QRM -di/dt = 100 A/µs 0.6 µC

IRM VR = 100V 6.0 A

TO-247 AD (IXFH) Outline

Terminals:

1 - Gate

2 - Drain

3 - Source

Tab - Drain

1 2 3

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A12.2 2.54 .087 .102

A22.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b11.65 2.13 .065 .084

b22.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

TO-268 (IXTT) Outline

Millimeter Inches

Min. Max. Min. Max.

A 4.82 5.13 .190 .202

A1 2.54 2.89 .100 .114

A2 2.00 2.10 .079 .083

b 1.12 1.42 .044 .056

b1 2.39 2.69 .094 .106

b2 2.90 3.09 .114 .122

c 0.53 0.83 .021 .033

D 25.91 26.16 1.020 1.030

E 19.81 19.96 .780 .786

e 5.46 BSC .215 BSC

J 0.00 0.25 .000 .010

K 0.00 0.25 .000 .010

L 20.32 20.83 .800 .820

L1 2.29 2.59 .090 .102

P 3.17 3.66 .125 .144

Q 6.07 6.27 .239 .247

Q1 8.38 8.69 .330 .342

R 3.81 4.32 .150 .170

R1 1.78 2.29 .070 .090

S 6.04 6.30 .238 .248

T 1.57 1.83 .062 .072

Dim.

TO-264 Outline

IXFH44N50P IXFT 44N50P

IXFK 44N50P

Fig. 2. Extended Output Characteristics

@ 25

º

C

0

10

20

30

40

50

60

70

80

90

100

0 3 6 9 12 15 18 21 24 27 30

V

D S

- Vo lts

I

D

- Amp eres

V

GS

= 10V

8V

5V

6V

7V

Fig. 3. Output Characteristics

@ 125

º

C

0

5

10

15

20

25

30

35

40

45

0246810121416

V

D S

- Vo lts

I

D

- Ampe re s

V

GS

= 10 V

8V

7V

6V

5V

Fig. 1. Output Characteristics

@ 25

º

C

0

5

10

15

20

25

30

35

40

45

01234567

V

D S

- Vo lt s

I

D

- Amp eres

V

GS

= 10 V

8V

7V

5V

6V

Fig. 4. R

DS(on

)

Normalized to 0.5 I

D25

Va lue v s. Juncti on Temperature

0.4

0.7

1

1.3

1.6

1.9

2.2

2.5

2.8

3.1

3.4

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

D S ( o n )

- Norma lize d

I

D

= 44A

I

D

= 22A

V

GS

= 10 V

Fig. 6. Drain Current v s. Case

Temperature

0

5

10

15

20

25

30

35

40

45

50

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amp e r e s

Fig. 5. R

DS(on)

Normalized to

0.5 I

D25

Value vs. I

D

0.7

1

1.3

1.6

1.9

2.2

2.5

2.8

3.1

3.4

0102030405060708090100

I

D

- Amperes

R

D S ( o n )

- N orma l ize d

T

J

= 12 5

º

C

T

J

= 25

º

C

V

GS

= 10 V

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFH44N50P IXFT 44N50P

IXFK 44N50P

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463

Fig. 11. Capacitance

10

100

1000

10000

0 5 10 15 20 25 30 35 40

V

D S

- Vo lts

Capacitance - picoFarads

Ciss

Coss

Crss

f = 1MHz

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0 102030405060708090100

Q

G

- nanoCoulombs

V

G S

- Vo lt s

V

DS

= 250V

I

D

= 22A

I

G

= 10mA

Fig. 7. Input Admittance

0

10

20

30

40

50

60

70

3.5 4 4.5 5 5.5 6 6.5

V

G S

- Vo lts

I

D

- A m peres

T

J

= 12 5

º

C

25

º

C

-40

º

C

Fig. 8. Transconductance

0

10

20

30

40

50

60

0 10203040506070

I

D

- Ampere s

g

f s

- Siemens

T

J

= -4 0

º

C

25

º

C

125

º

C

Fig. 9. S ource Current vs.

Source-To-Drain Voltage

0

20

40

60

80

100

120

140

0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2

V

S D

- Volts

I

S

- A m peres

T

J

= 125

º

C

T

J

= 25

º

C

Fig. 12. Forward-Bias

Safe Operating Area

1

10

100

1000

10 100 1000

V

D S

- Volts

I

D

- Amperes

100µs

1ms

DC

T

J

= 150ºC

T

C

= 25ºC

R

DS(on)

Lim it

10ms

25

µ

s

IXFH44N50P IXFT 44N50P

IXFK 44N50P

F ig. 13. Maximum Transient Thermal Resistance

0.01

0.10

1.00

0.1 1 10 100 1000

Pulse Width - milliseconds

R ( t h ) J C - ºC / W