2N3054
Silicon NPN Transistors
Medium Power General Purpose Switch
TO66 Type Package
Description:
The 2N3054 is a silicon NPN transistor in a TO66 type package designed for general purpose switching
and amplifier applications
Features:
DExcellent Safe Operating Area
DDC Current Gain Specified to 3.0 Amps
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO 55V......................................................
Collector−Emitter Voltage (RBE = 1005), VCER 60V.........................................
Collector−Base Voltage, VCB 90V.........................................................
Emitter−Base Voltage, VEB 7V...........................................................
Collector Current, IC
Continuous 4A...................................................................
Peak 10A.......................................................................
Base Current, IB 2A....................................................................
Total Power Dissipation (TC = +255C), PD 25W............................................
Derate above 255C 0.143W/5C.....................................................
Operating Junction Temperature Range, TJ−655 to +2005C..................................
Storage Junction Temperature Range, Tstg −655 to +2005C..................................
Thermal Resistance, Junction to Case, R3JC 75C/W.........................................
Electrical Characteristics: (TC = +255C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0, Note 1 55 − − V
VCER(sus) IC = 100mA, RBE = 1005, Note 1 60 − − V
Collector Cutoff Current ICEO VCE = 30V, IB = 0 − − 5 A
ICEX VCE = 90V, VBE(off) = 1.5V − − 1.0 mA
VCE = 90V, VBE(off) = 1.5V, TC = +1505C− − 6.0 mA
Emitter Cutoff Current IEBO VEB = 7V, IC = 0 − − 1.0 mA
Note 1. Pulse Test: Pulse Width 3 300 s, Duty Cycle 3 2%.
Electrical Characteristics (Cont’d): (TC = +255C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain hFE IC = 0.5A, VCE = 4V 25 −150
IC = 3.0A, VCE = 4V 5.0 − −
Collector−Emitter Saturation Voltage VCE(sat) IC = 500mA, IB = 50mA − − 1.0 V
IC = 3.0A, IB = 1.0A − − 6.0 V
Base−Emitter ON Voltage VBE(on) IC = 500mA, VCE = 4V − − 1.7 V
Dynamic Characteristics
Current Gain −Bandwidth Product fTIC = 200mA, VCE = 10V 3.0 − − MHz
Small−Signal Current Gain hfe IC = 100mA, VCE = 4V, f = 1kHz 25 −180
Common−Emitter Cutoff frequency fhfe IC = 100mA, VCE = 4V 30 − −
Note 1. Pulse Test: Pulse Width 3 300 s, Duty Cycle 3 2%.
.485 (12.3)
Dia
.062 (1.57)
.295 (7.5)
.360
(9.14)
Min
.031 (0.78) Dia
.960 (24.3) Base
.580 (14.7)
.200
(5.08)
EmitterCollector/Case
.145 (3.7) R Max
.147 (3.75) Dia
(2 Places)
