1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-M ounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad
for drain 1 cm2.
[2] Pulse test: tp300 μs; δ≤0.01.
BSS138P
60 V, 360 mA N-channel Trench MOSFET
Rev. 1 — 2 November 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tamb =25°C--60V
VGS gate-source voltage Tamb =25°C--±20 V
IDdrain current Tamb =25°C;
VGS =10V [1] --360mA
RDSon drain - so urce on-st a te
resistance Tj=25°C;
VGS =10V;
ID= 300 mA
[2] -0.91.6Ω
BSS138P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 2 November 2010 2 of 16
NXP Semiconductors BSS138P
60 V, 360 mA N-channel Trench MOSFET
2. Pinning information
3. Ordering information
4. Marking
[1] * = placeholder for manufacturing site code
5. Limiting values
Table 2. Pinning
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2S source
3 D drain
12
3
S
D
G
m
bb076
Table 3. Ordering information
Type number Package
Name Description Version
BSS138P TO-236AB plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
Type number Marking code[1]
BSS138P AN*
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tamb =25°C-60V
VGS gate-source voltage Tamb =25°C-±20 V
IDdrain current VGS =10V [1]
Tamb =25°C-360mA
Tamb =100°C-230mA
IDM peak drain current Tamb =25°C;
single pulse; tp10 μs-1.2A
BSS138P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 2 November 2010 3 of 16
NXP Semiconductors BSS138P
60 V, 360 mA N-channel Trench MOSFET
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Ptot total power dissipation Tamb =25°C[2] -350mW
[1] -420mW
Tsp =25°C - 1140 mW
Tjjunction temperature 150 °C
Tamb ambient temperature 55 +150 °C
Tstg storage temperature 65 +150 °C
Source-drain diode
ISsource current Tamb =25°C[1] -360mA
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Fig 1. Normalized total power dissipation as a
function of ambient temperature Fig 2. Normalized continuous drain current as a
function of ambient temperature
Tamb (°C)
75 17512525 7525
017aaa001
40
80
120
Pder
(%)
0
Tamb (°C)
75 17512525 7525
017aaa002
40
80
120
Ider
(%)
0
Pder Ptot
Ptot 25°C()
------------------------100 %×=Ider ID
ID25°C()
--------------------100 %×=
BSS138P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 2 November 2010 4 of 16
NXP Semiconductors BSS138P
60 V, 360 mA N-channel Trench MOSFET
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
IDM = single pulse
(1) tp= 100 μs
(2) tp=1ms
(3) tp=10ms
(4) tp= 100 ms
(5) DC; Tsp =25°C
(6) DC; Tamb =25°C; drain mounting pad 1 cm2
Fig 3. Safe operating area ; junc tion to ambient; continuous and peak drain currents as a function of
drain-source voltage
017aaa111
101
102
1
10
ID
(A)
103
VDS (V)
101102
101
(1)
(2)
(3)
(4)
(5)
(6)
Limit RDSon = VDS/ID
Table 6. Thermal character istics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air [1] - 310 370 K/W
[2] - 260 300 K/W
Rth(j-sp) thermal resistance from
junction to solder point --115K/W
BSS138P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 2 November 2010 5 of 16
NXP Semiconductors BSS138P
60 V, 360 mA N-channel Trench MOSFET
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from ju nc tio n to ambient as a function of p ulse du ration; typical values
FR4 PCB, mounting pad for drain 1 cm2
Fig 5. Transient thermal impedance from ju nc tio n to ambient as a function of p ulse du ration; typical values
017aaa015
tp (s)
103102103
101102101
102
10
103
Zth(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.25 0.2
0.1 0.05
0.02
0.01
0
017aaa016
tp (s)
103102103
101102101
102
10
103
Zth(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.25 0.2
0.1 0.05
0.02
0.01
0
BSS138P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 2 November 2010 6 of 16
NXP Semiconductors BSS138P
60 V, 360 mA N-channel Trench MOSFET
7. Characteristics
[1] Pulse test: tp300 μs; δ≤0.01.
Table 7. Characteristics
Tj=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static chara cteristics
V(BR)DSS drain-source breakdown
voltage ID=10μA; VGS =0V 60--V
VGS(th) gate-source threshold
voltage ID=250μA; VDS =V
GS 0.9 1.2 1.5 V
IDSS drain leakage current VDS =60V; V
GS =0V
Tj=25°C --1μA
Tj= 150 °C --10μA
IGSS gate leakage current VGS =±20 V; VDS = 0 V - - 100 nA
RDSon drain-source on-state
resistance [1]
VGS =5V; I
D=50mA - 1 2 Ω
VGS =10V; I
D=300mA - 0.9 1.6 Ω
gfs forward
transconductance VDS =10V; I
D= 200 mA [1] - 700 - mS
Dynamic characteristics
QG(tot) total gate charge ID=300mA;
VDS =30V;
VGS =4.5V
- 0.72 0.8 nC
QGS gate-source charge - 0.14 - nC
QGD gate-drain charge - 0.24 - nC
Ciss input capacitance VGS =0V; V
DS =10V;
f=1MHz - 3850pF
Coss output capacitance - 7 - pF
Crss reverse transfer
capacitance -4-pF
td(on) turn-on delay time VDS =50V;
RL=250Ω;
VGS =10V;
RG=6Ω
- 26ns
trrise time -3-ns
td(off) turn-off delay time - 9 20 ns
tffall time - 4 - ns
Source-drain diode
VSD source-drain voltage I S=115mA; V
GS = 0 V 0.47 0.75 1.1 V
BSS138P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 2 November 2010 7 of 16
NXP Semiconductors BSS138P
60 V, 360 mA N-channel Trench MOSFET
Tamb =25°CT
amb =25°C; VDS =5V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6. Output cha racteristics: drain current as a
function of drain-source voltage; typical
values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Tamb =25°C
(1) VGS =2.0V
(2) VGS =2.5V
(3) VGS =3.0V
(4) VGS =3.5V
(5) VGS =10V
ID=300mA
(1) Tamb = 150 °C
(2) Tamb =25°C
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
VDS (V)
0.0 4.03.01.0 2.0
017aaa112
0.4
0.6
0.2
0.8
1.0
ID
(A)
0.0
3.0 V
2.25 V
2.0 V
2.5 V
2.75 V
VGS = 3.5 V
017aaa113
104
105
103
ID
(A)
106
VGS (V)
0.0 2.01.50.5 1.0
(2)(1) (3)
ID (A)
0.0 1.00.80.4 0.60.2
017aaa114
2.0
3.0
1.0
4.0
5.0
RDSon
(Ω)
0.0
(2)(1)
(3)
(5)
(4)
VGS (V)
0.0 10.08.04.0 6.02.0
017aaa115
2.0
4.0
6.0
RDSon
(Ω)
0.0
(1)
(2)
BSS138P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 2 November 2010 8 of 16
NXP Semiconductors BSS138P
60 V, 360 mA N-channel Trench MOSFET
VDS >I
D×RDSon
(1) Tamb =25°C
(2) Tamb = 150 °C
Fig 10. Transfer chara cteristics: drain current as a
function of gate-source voltage; typical values Fig 11. Normalized drain-source on-state resistance
as a function of ambient temperature; typical
values
ID= 0.25 mA; VDS =V
GS
(1) maximum values
(2) typical values
(3) minimum values
f=1MHz; V
GS =0V
(1) Ciss
(2) Coss
(3) Crss
Fig 12. Gate-source threshold voltage as a function of
ambient temperature Fig 13. Input, output and rever se transfer
capacitances as a function of drain-source
voltage; typical values
017aaa116
VGS (V)
0.0 3.02.01.0
0.4
0.2
0.6
0.8
ID
(A)
0.0
(1) (2)
(2) (1)
Tamb (°C)
60 180120060
017aaa022
1.2
0.6
1.8
2.4
a
0.0
aRDSon
RDSon 25°C()
-----------------------------
=
Tamb (°C)
60 180120060
017aaa117
1.0
0.5
1.5
2.0
VGS(th)
(V)
0.0
(2)
(1)
(3)
017aaa118
VDS (V)
101102
101
10
102
C
(pF)
1
(2)
(1)
(3)
BSS138P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 2 November 2010 9 of 16
NXP Semiconductors BSS138P
60 V, 360 mA N-channel Trench MOSFET
ID= 300 mA; VDS =30V; T
amb =25°C
Fig 14. Gate-source voltage as a function of gate
charge; typical va lues Fig 15. Gate charge waveform definitions
VGS =0V
(1) Tamb = 150 °C
(2) Tamb =25°C
Fig 16. Source current as a function of so urce-drain voltage; typical values
QG (nC)
0.0 0.80.60.2 0.4
017aaa119
2.0
3.0
1.0
4.0
5.0
VGS
(V)
0.0
003aaa50
8
VGS
VGS(th)
QGS1 QGS2
QGD
VDS
QG(tot)
ID
QGS
VGS(pl)
VSD (V)
0.0 1.20.80.4
017aaa120
0.4
0.8
1.2
IS
(A)
0.0
(1) (2)
BSS138P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 2 November 2010 10 of 16
NXP Semiconductors BSS138P
60 V, 360 mA N-channel Trench MOSFET
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in auto motive applications.
Fig 17. Duty cycle definition
t
1
t
2
P
t
006aaa812
duty cycle δ =
t
1
t
2
BSS138P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 2 November 2010 11 of 16
NXP Semiconductors BSS138P
60 V, 360 mA N-channel Trench MOSFET
9. Package outline
Fig 18. Package outline SOT23 (TO-236AB)
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2 0.95
e
1.9 2.5
2.1
0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT2
3
BSS138P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 2 November 2010 12 of 16
NXP Semiconductors BSS138P
60 V, 360 mA N-channel Trench MOSFET
10. Soldering
Fig 19. Reflow soldering footprin t SOT23 (TO-236AB)
Fig 20. Wave soldering footprint SOT23 (TO-236AB)
solder lands
solder resist
occupied area
solder paste
sot023_
fr
0.5
(3×)
0.6
(3×)
0.6
(3×)
0.7
(3×)
3
1
3.3
2.9
1.7
1.9
2
Dimensions in mm
solder lands
solder resist
occupied area
preferred transport direction during soldering
sot023_
fw
2.8
4.5
1.4
4.6
1.4
(2×)
1.2
(2×)
2.2
2.6
Dimensions in mm
BSS138P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 2 November 2010 13 of 16
NXP Semiconductors BSS138P
60 V, 360 mA N-channel Trench MOSFET
11. Revision history
Table 8. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BSS138P v.1 20101102 Product data sheet - -
BSS138P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 2 November 2010 14 of 16
NXP Semiconductors BSS138P
60 V, 360 mA N-channel Trench MOSFET
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full informatio n see the relevant full dat a
sheet, which is available on request via the local NXP Semicond uctors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre va il.
Product specificat io nThe information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyon d those described in the
Product data sheet.
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Limited warr a nty and liability — Information in this document is believed to
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representations or warrant ies, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
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Notwithstanding any damages that customer might incur for any reason
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Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
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malfunction of an NXP Semiconductors pro duct can reasonably be expected
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NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
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applications and products.
NXP Semiconductors does not accept any liabili ty related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
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testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by cust omer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
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applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing i n this document may be interpreted or
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Export control — This document as well as the item(s) described herein
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Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contain s data from the objective specification for product development .
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
BSS138P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 2 November 2010 15 of 16
NXP Semiconductors BSS138P
60 V, 360 mA N-channel Trench MOSFET
Quick reference data The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respective ow ners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BSS138P
60 V, 360 mA N-channel Trench MOSFET
© NXP B.V. 2010. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 2 November 2010
Document identifier: BS S13 8P
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . 10
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . 10
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
13 Contact information. . . . . . . . . . . . . . . . . . . . . 15
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16