PD- 95299 IRF7342D2PbF TM Co-packaged HEXFET(R) Power MOSFET and Schottky Diode l Ideal For Buck Regulator Applications l P-Channel HEXFET(R) l Low VF Schottky Rectifier l SO-8 Footprint l Lead-Free Description FETKY MOSFET & Schottky Diode l 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = -55V RDS(on) = 105m Schottky Vf = 0.61V Top View The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. SO-8 Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted) ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS dv/dt TJ, TSTG Parameter Maximum Units Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current A Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt A Junction and Storage Temperature Range -3.4 -2.7 -27 2.0 1.3 16 20 -5.0 -55 to +150 A W mW/C V V/ns C Thermal Resistance Symbol RJL RJA RJA Parameter Junction-to-Drain Lead, MOSFET Junction-to-Ambient , MOSFET Junction-to-Ambient , SCHOTTKY Typ. Max. Units --- --- --- 20 62.5 62.5 C/W Notes: Repetitive rating - pulse width limited by max. junction temperature (see fig. 11) ISD -3.4A, di/dt -150A/s, VDD V(BR)DSS, TJ 150C Pulse width 400s - duty cycle 2% Surface mounted on 1 inch square copper board, t 10sec. www.irf.com 1 10/13/04 IRF7342D2PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -55 --- --- --- -1.0 3.3 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.054 95 150 --- --- --- --- --- --- 26 3.0 8.4 14 10 43 22 690 210 86 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 105 VGS = -10V, ID = -3.4A m 170 VGS = -4.5V, ID = -2.7A --- V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -3.1A -2.0 VDS = -44V, VGS = 0V A -25 VDS = -44V, VGS = 0V, TJ = 70C -100 VGS = -20V nA 100 VGS = 20V 38 ID = -3.1A 4.5 nC VDS = -44V 13 VGS = -10V, See Fig. 6 & 14 22 VDD = -28V 15 ID = -1.0A ns 64 RG = 6.0 32 VGS = -10V, --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 MOSFET Source-Drain Ratings and Characteristics IS I SM VSD t rr Q rr Parameter Min. Continuous Source Current(Body Diode) --- Pulsed Source Current (Body Diode) --- Body Diode Forward Voltage --- Reverse Recovery Time (Body Diode) --- Reverse Recovery Charge --- Typ. --- --- --- 54 85 Max. Units Conditions -2.0 A -27 -1.2 V TJ = 25C, IS = -2.0A, VGS = 0V 80 ns TJ = 25C, IF = -2.0A 130 nC di/dt = 100A/s Schottky Diode Maximum Ratings If (av) Parameter Max. Average Forward Current Max. peak one cycle Non-repetitive Surge current ISM Max. Units 3.0 A 490 70 A Conditions 50% Duty Cycle. Rectangular Wave, TA = 57C See Fig. 21 5s sine or 3s Rect. pulse Following any rated 10ms sine or 6ms Rect. pulse load condition & with Vrrm applied Schottky Diode Electrical Specifications Vfm Parameter Max. Forward Voltage Drop Vrrm Irm Max. Working Peak Reverse Voltage Max. Reverse Leakage Current Ct Max. Junction Capacitance 2 Max. Units 0.61 0.76 V 0.53 0.65 60 V 2.0 mA 30 145 pF Conditions If = 3.0A, Tj = 25C If = 6.0A, Tj = 25C If = 3.0A, Tj = 125C If = 6.0A, Tj = 125C Vr = 60V Tj = 25C Tj = 125C Vr = 5Vdc ( 100kHz to 1 MHz) 25C www.irf.com IRF7342D2PbF Power Mosfet Characteristics 100 VGS TOP -15V -10V -6.0V -5.0V -4.5V -3.5V -3.0V BOTTOM -2.5V 10 1 -2.5V 0.1 0.1 10 1 -2.5V 20s PULSE WIDTH Tj = 150C 20s PULSE WIDTH Tj = 25C 1 10 0.1 0.1 100 Fig 1. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 2.0 TJ = 25 C TJ = 150 C 1 V DS = -25V 20s PULSE WIDTH 3.0 4.0 5.0 6.0 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 100 10 1 -VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V) 0.1 2.0 VGS -15V -10V - 6.0V -5.5V -4.5V -3.5V -3.0V BOTTOM - 2.5V TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) 100 7.0 ID = -3.4 A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7342D2PbF Power Mosfet Characteristics VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 800 Ciss 600 400 Coss Crss 200 0 1 10 20 -VGS , Gate-to-Source Voltage (V) 1000 12 8 4 - -VDS , Drain-to-Source Voltage (V) 0 20 30 40 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 10us -IID , Drain Current (A) -ISD , Reverse Drain Current (A) 10 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10 TJ = 150 C TJ = 25 C 1 0.1 0.2 10 100us 1ms 1 10ms TC = 25 C TJ = 150 C Single Pulse V GS = 0 V 0.4 0.6 0.8 1.0 1.2 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS =-48V VDS =-30V VDS =-12V 16 0 100 ID = -3.1A 1.4 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7342D2PbF Power Mosfet Characteristics 3.5 RD V DS -ID , Drain Current (A) 3.0 V GS D.U.T. RG 2.5 - + 2.0 V DD V GS Pulse Width 1 s Duty Factor 0.1 % 1.5 1.0 Fig 10a. Switching Time Test Circuit 0.5 td(on) tr t d(off) tf VGS 0.0 25 50 75 100 125 10% 150 TC , Case Temperature ( C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 PDM 0.01 1 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7342D2PbF 0.25 RDS ( on ) , Drain-to-Source On Resistance ( ) ( RDS(on), Drain-to -Source On Resistance) Power Mosfet Characteristics 0.20 0.15 ID = -3.4A 0.10 0.05 3.0 5.0 7.0 9.0 11.0 13.0 15.0 0.35 0.30 VGS = -4.5V 0.25 0.20 0.15 VGS = -10V 0.10 0.05 0.0 4.0 -VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage 8.0 12.0 16.0 -ID , Drain Current ( A ) Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG QGS .2F .3F QGD D.U.T. +VDS VGS VG -3mA Charge Fig 14a. Basic Gate Charge Waveform 6 12V IG ID Current Sampling Resistors Fig 14b. Gate Charge Test Circuit www.irf.com IRF7342D2PbF Power Mosfet Characteristics 100 2.0 80 ID = -250A Power (W) -VGS(th) ( V ) 1.8 1.6 1.4 60 40 20 1.2 0 1.0 -75 -50 -25 0 25 50 75 100 TJ , Temperature ( C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 125 150 0.001 0.010 0.100 1.000 10.000 100.000 Time (sec) Fig 16. Typical Power Vs. Time 7 IRF7342D2PbF Schottky Diode Characteristics 100 100 Instantaneous Forward Current - I F (A) Reverse Current - I R (mA) T J= 150C 10 125C 100C 1 75C 0.1 50C 0.01 25C T J= 150C 0.001 T J= 125C 10 0 10 T J= 25C 20 30 40 50 60 Reverse Voltage - V R (V) Fig. 18 - Typical Values of Reverse Current Vs. Reverse Voltage 1 0 0.4 0.8 1.2 1.6 2 2.4 2.8 Forward Voltage Drop - V FM(V) Fig. 17 - Maximum Forward Voltage Drop Characteristics Junction Capacitance - C T (pF) 1000 T J= 25C 100 10 0 10 20 30 40 50 60 Reverse Voltage - V R(V) Fig. 19 - Typical Junction Capacitance Vs. Reverse Voltage 8 www.irf.com IRF7342D2PbF Schottky Diode Characteristics Thermal Response(Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 PDM 0.02 1 0.01 t1 t2 Notes: 1. Duty factor D =t 1 / t 2 2. Peak TJ = P DM x ZthJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Allowable Ambient Temprature - (C) 180 160 140 RthJA = 62.5 C/W 120 100 DC 80 60 see note (4) 40 Square wave ( D = 0.50) 20 80 % Rated VR applied 0 0 1 2 3 4 5 6 Average Forward Current - F(AV) I (A) Fig.21 - Maximum Allowable Ambient Temp. Vs. Forward Current Note (4) Formula used: TC = TJ - (Pd + PdREV) x RthJA ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) ; PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR www.irf.com 9 IRF7342D2PbF SO-8 (Fetky) Package Outline D DIM B 5 A 8 6 7 6 H E 1 6X 2 3 0.25 [.010] 4 A e e1 8X b 0.25 [.010] A A1 MILLIMET ERS MAX MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BAS IC e1 A 5 INCHES MIN MAX .025 BASIC 0.635 BAS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 C y 0.10 [.004] 8X c 8X L 7 C A B FOOTPRINT NOTES : 1. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994. 2. CONTROLLING DIMENS ION: MILLIMETER 8X 0.72 [.028] 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONF ORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT TO E XCEED 0.15 [.006]. 6.46 [.255] 6 DIMENS ION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT TO E XCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGTH OF LEAD F OR S OLDERING TO A S UBS TRATE. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 (Fetky) Part Marking Information EXAMPLE: T HIS IS AN IRF7807D1 (FET KY) INTERNAT IONAL RECT IFIER LOGO 10 XXXX 807D1 DAT E CODE (YWW) P = DIS GNATES LEAD - FREE PRODUCT (OPTIONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER www.irf.com IRF7342D2PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04 www.irf.com 11 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: International Rectifier: IRF7342D2PBF IRF7342D2TRPBF