1
Rectifier Device Data
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. . . using the Schottky Barrier principle with a platinum barrier metal. These
state–of–the–art devices have the following features:
Guard–Ring for Stress Protection
Low Forward Voltage
150°C Operating Junction Temperature
Guaranteed Reverse Avalanche
Epoxy Meets UL94, VO at 1/8
Low Power Loss/High Efficiency
High Surge Capacity
Low Stored Charge Majority Carrier Conduction
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.9 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
Shipped 50 units per plastic tube
Marking: B1060, B1070, B1080, B1090, B10100
MAXIMUM RATINGS
Rating
Symbol
MBR
Unit
Rating
Symbol
1060 1070 1080 1090 10100
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
60 70 80 90 100 Volts
Average Rectified Forward Current (Rated VR) TC = 133°C IF(AV) 10 Amps
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 133°CIFRM 20 Amps
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 Amps
Peak Repetitive Reverse Surge Current (2.0 µs, 1.0 kHz) IRRM 0.5 Amp
Operating Junction Temperature TJ
*
65 to +150 °C
Storage Temperature Tstg
*
65 to +175 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/µs
THERMAL CHARACTERISTICS
Maximum Thermal Resistance — Junction to Case
— Junction to Ambient RθJC
RθJA 2.0
60 °C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
(iF = 10 Amps, TC = 125°C)
(iF = 10 Amps, TC = 25°C)
(iF = 20 Amps, TC = 125°C)
(iF = 20 Amps, TC = 25°C)
vF0.7
0.8
0.85
0.95
Volts
Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, TC = 125°C)
(Rated dc Voltage, TC = 25°C)
iR6.0
0.10
mA
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%.
SWITCHMODE is a trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
Order this document
by MBR1060/D
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SEMICONDUCTOR TECHNICAL DATA
31, 4
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SCHOTTKY BARRIER
RECTIFIERS
10 AMPERES
60 to 100 VOLTS
CASE 221B–03
TO–220AC
MBR1060 and MBR10100 are
Motorola Preferred Devices
1
3
4
Rev 2
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2Rectifier Device Data
Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current
Figure 3. Current Derating, Case Figure 4. Current Derating, Ambient
Figure 5. Forward Power Dissipation
0.60
VF, INSTANTANEOUS VOLTAGE (VOLTS)
20
50
10
VR, REVERSE VOLTAGE (VOLTS)
0
110
TC, CASE TEMPERATURE (
°
C)
7.0
3.0
4.0
0
TA, AMBIENT TEMPERA TURE (
°
C)
200
10
8.0
6.0
3.0
040
2.0 4.00
IF(AV), A VERAGE CURRENT (AMPS)
10
4.0
3.0
2.0
1.0
03.0
IF, INSTANTANEOUS FORW ARD CURRENT (AMPS)
I
I
IF(AV), A VERAGE FORWARD CURRENT (AMPS)
5.0
3.0
0.2 0.4 0.8 20 40 60 80
0.1
1.0
120 130 140 150 60 80 160
P
5.0 106.0
7.0
1.0
0.5 1.0 140
, REVERSE CURRENT (mA)
R
10
, A VERAGE FORWARD CURRENT (AMPS)
F(AV)
1.0 7.0 8.0 9.0
5.0
6.0
dc
SQUARE W AVE
dc
TJ = 25
°
C
150
°
C
TJ = 150
°
C
125
°
C
100
°
C
0.01 25
°
C
6.0
5.0
8.0
10
9.0 9.0
7.0
5.0
4.0
100 120 140
, AVERAGE POWER DISSIPATION (W ATTS)
F(AV)
RATED VOLTAGE
APPLIED
SQUARE W AVE
dc
RATED VOLTAGE APPLIED
R
q
JC = 2
°
C/W
(HEATSINK)
R
q
JA = 16
°
C/W
(NO HEATSINK)
R
q
JA = 60
°
C/W
SQUARE W AVE
dc
TA = 25
°
C
175
°
C100
°
C
0.50.1 0.3 0.7 0.9 100 120
160
1.0
2.0
1.0
2.0
180 200
9.0
8.0 IPK/IAV =
p
IPK/IAV = 5.0
IPK/IAV = 10
IPK/IAV = 20
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3
Rectifier Device Data
PACKAGE DIMENSIONS
CASE 221B–03
(TO–220AC)
ISSUE B
B
R
J
D
G
L
H
Q
T
U
A
K
CS
4
13
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.595 0.620 15.11 15.75
B0.380 0.405 9.65 10.29
C0.160 0.190 4.06 4.82
D0.025 0.035 0.64 0.89
F0.142 0.147 3.61 3.73
G0.190 0.210 4.83 5.33
H0.110 0.130 2.79 3.30
J0.018 0.025 0.46 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.14 1.52
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.14 1.39
T0.235 0.255 5.97 6.48
U0.000 0.050 0.000 1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
F
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4Rectifier Device Data
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MBR1060/D