MOSPOWER Selector Guide (Continued) N-Channel MOSPOWER (continued) . Breakdown Ip Power Device Voltage (Omen Continuous Dissipation Part (Volts) (Ohms (Amps) (Watts) Number 100 0.055 40.0 150 IRF150 100 0.08 33.0 150 IRF152 100 0.085 27.0 125 IRF140 100 0.11 24.0 125 IRF 142 100 0.18 14.0 100 VN1000A 100 0.18 14.0 75 IRF130 100 0.25 12.0 100 VN1001A 100 0.25 12.0 75 IRF 132 100 0.3 8.0 40 (RF 120 100 0.4 7.0 40 IRF122 90 4.0 1.9 25 2N6658 90 45 1.8 25 VNSSAA e; 90 5.0 1.7 25 VNSOAA 80 0.18 14.0 100 VNQ8B00A Ee 80 0.25 12.0 100 VNO0801A 60 0.055 40.0 150 IRF 151 TO-3 60 0.08 33.0 150 IRF153 60 0.085 27.0 125 IRF141 60 0.11 24.0 125 IRF143 60 0.12 18.0 100 VNOGO0A 60 0.15 16.0 100 VNOGOTA 60 0.18 14.0 75 IRF131 60 0.25 12.0 75 IRF133 60 0.3 8.0 40 IRF121 60 0.4 10.0 80 VN64GA 60 0.4 7.0 40 IRF123 60 3.0 2.0 25 2N6657 60 3.5 2.0 25 VNG6G7AA 40 0.12 18.0 100 VNO400A 40 0.15 16.0 100 VNO401A 35 1.8 2.0 25 2N6656 35 25 2.0 25 VN35AA 500 0.85 8.0 125 (RF840 500 1.10 7.9 125 IRF842 500 1.5 45 75 VN5001D 500 1.5 45 75 IRF830 500 2.0 4.0 75 VN5002D 500 2.0 4.0 75 IRF832 500 3.0 25 40 IRF820 500 4.0 2.0 40 IRF822 450 0.85 8.0 125 IRF841 450 1.10 7.0 125 IRF843 450 1.5 45 75 VN4501D 450 1.5 45 75 IRF831 450 2.0 4.0 75 VN4502D 450 2.0 4.0 75 IRF833 450 3.0 2.5 40 IRF821 450 4.0 2.0 40 IRF823 400 0.55 10.0 125 IRF740 TO-220AB 400 0.80 8.0 125 IRF742 400 1.0 6.0 75 VN4000D 400 1.0 55 75 t{RF730 400 1.5 5.0 75 VN4001D 400 1.5 45 75 IRF732 400 1.8 3.0 40 IRF720 400 2.5 2.5 40 IRF722 350 0.55 10.0 425 IRF741 350 0.80 8.0 125 IRF743 350 1.0 6.0 75 VN3500D 350 1.0 55 75 IRF731 350 1.5 5.0 75 VN3501D 350 1.5 45 75 IRF733 350 1.8 3.0 40 IRF721 350 25 25 40 IRF723 240 6.0 1.4 20 VN2406D Siliconix 1-5 SPINS 10P9/SG YIMOdSOWIRF420 = IRF424 IRF422 = IRF423 Ss IRF820 = IRF824 = IRF822 IRF823 Siliconix Advanced Information 5OOV) -Channel Enhancement Mode These power FETs are designed especially for off-line switching regulators, converters, solenoid and relay drivers. Product Summary FEATURES Neate er BVoss | Rosion) Ip Package ws High Voltage IRF420 S00V , 32 2.54 No Second Breakdown IRF421 450V 103 a High Input Impedance IRF422 500V 40 20A g Internal Drain-Source Diode IRF423 450V _w Very Rugged: Excellent SOA iRFB20 500V 30 3 6A as Extremely Fast Switching IRF821 | 450V " T0.220A8 IRF822 500V f _ BENEFITS . TAFezS TOV 40 2.0A u Reduced Component Count a Improved Performance o a Simpler Designs te eps G a Improved Reliability at s ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless otherwise noted) Drain-Source Voltage Drain Current IRF420, 422 0... cece eee c cece cece eee n ene nee eee e eee ee 500V Pulsed (80s to 300us, 1% duty cycle)-......eeeeeeeeee +10A IRF820, 822 IRF421, 423 oeeceeeeccecceeceueeeceucesenseesenecaes A50V Gate Current (Peak) oo... c cece cece cere cece tener eens t1A IRF821, 823 Gate-Source Voltage -+-1--s rere eee eer erene tere ereeerenes + 40V Drain-Gate Voltage Total Power Dissipation ........00cciccceeasceseeesesenenens 40W IRFA20, 422 vee b eee e ee ne ene senate nae seneeennenene 500V Linger Derating Factor .s+esse+letesesesete 0.32 W/C VRF421, 423 i ccc cece cence tere ete e een ee tes 450V Operating and Storage IRF821, 823 Temperature oo... . seer eee teeters -55C to + 150C - Drain Current Continuous IRF420, 421.0. e ee cee een teen teens +2.5A IRF422, 423.000... ec eect e reece cnet tte e ones +2.0A PACKAGE DIMENSIONS 875 0.450 . (77.43) 20 (0.51) 23 p22 225) ~ (6.35) BSS (1.39) = oe 208 S35 x $ TWrvne ne TT 0.043 (7.092) SEATING aT e036 rege) | ane be - 890 1279 PLANE 7 Dae pales 4.09) a er) 0.675. 7. 145) [a7 (29.896) or ee (6.355 0.655 (16.637) 1 EN hs 4 m8 oaao (71.176) Ln {2 \ We tan | (+ 4 0420 (70.668) Ye N 1 a | 1 | t ~~] / 0.161 (4.089) : O45 (1.15) 0226 rs715h O181 (3.835) Ge (0:207) aoscom view 13385) MAX a | PIN 1 Gate TO-3 PIN 1 Gate TO-220AB PIN 2 Source PIN 2 & TAB Drain CASE Drain PIN 3 Source 2-26 SiliconixELECTRICAL CHARACTERISTICS (Tc =25C unless otherwise noted) Part : Parameter Number Min Typ Max Unit Test Conditions Static IRF 420, 820 500 Drain-Source Breakdown tRF422, 822 . BV, : - 4 Veg = 0,-Ip = 250 DSS Voltage IRF421, 821 | 400 Vv es D pA IRF 423, 823 Vast) Gate Threshold Voltage All 2.0 3.3 4.0 Vv Vos = Ves; p= 1 mA \ess Gate-Body Leakage All 10 +100 nA Veg = + 20V, Vos =0 Zero Gate Voltage Drain : / 0.4 0.25 Vpg = 0.8 Rated Vig Vag = 0 loss Current All mA _ g oe u 0.2 1.0 Vpg = Rated Vos, Vag = 0, Ty = 125C Ipjon) +: ON-State Drain Current All 2.5 A Vps = 25V, Vgs = 10V (Note 1) IRF 420, 820 25 3.0 Static Drain-Source On-State IRF 421, 821 . . : . Toston) Resistance TAF4D2, 822 2 | Vag = 10V, Ip = 1A (Note 1) IRF423, 823 3.0 | 40 : Dynamic Dts Forward Transconductance All 1.0 1.75 S |'Vpg = 25V, Ip = 1A (Note 1) Ciss Input Capacitance 300 400 Coss Output Capacitance All | 75 150 pF Ves = 0, Vog = 25V, f= 1 MHz Ciss Reverse Transfer Capacitance 20 40 taon) Turn-On Delay Time All 30 60 t, Rise Time All 25 50 Vop= 250V, Ip *1A, R, = 2400, R, = 50Q, ns 9 taoty Turn-Off Delay Time All 30 60 Veg = 10V (Fig. 1) tr Fall Time . All. 15 | 30 . . ' Drain-Source Diode Characteristics Vep Forward On Voltage Alt -1.0 v ls =-2.5A Veg = 0 (Note 1) ter Reverse Recovery Time All 200 ns |lp=2.5A, Veg =0, di/dt = 100A/us (Fig. 2) Note 1: Pulse test 80 xs to 300 us, 1% duty cycle FIGURE 1 Switching Test Circuit FIGURE 2 JEDEC Reverse Recovery Circult y WV DD 50Q di/dt Adjust (1-27 UH) : | . = STO 50uF I / , | IN4933 # _ (pKyAdjust , Rgen | wt L l ~ Lie | | | | yeton IN4001 20v + | 1 | T | 4000UF = 2 >i | J | I j | CIRCUIT = | R< 0.252 PULSE UNDER - L $0.01uH [generator] [TEST a = PW. = Tus Cg < 50 pF +4 > id AA DUTY CYCLE = 1% | A IN4723 2N4204 SCOPE 3 FROM TRIGGER CKT Siliconix 2-27 ceddl = 72esal = b7Ssal = OSI cysdl = Ccovsdl = bovsdl = Odsal