
DSA15IM45IB
preliminary
V = V
Symbol Definition
Ratings
typ. max.
I
R
I
V
F
0.75
R1.75 K/
R
min.
15
V
RSM
250T = 25°C
VJ
T = °C
VJ
m
2.5V = V
R
T = 25°C
VJ
I = A
F
T = °C
C
155
P
tot
85
T = 25°C
C
RK/
15
45
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Uni
0.91
T = 25°C
VJ
125
V
F0
0.42T = °C
VJ
175
r
F
9.9 m
0.63T = °C
VJ
I = A
F
15
0.79
I = A
F
30
I = A
F
30
threshold voltage
slope resistance for power loss calculation only
µ
125
V
RRM
45
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
497
unction capacitance V = V5 T = 25°Cf = 1 MHz
RVJ
p
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current V = 0 V
R
T = °C
VJ
175
340
45
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Schottky
45
0.50
IXYS reserves the right to change limits, conditions and dimensions. 20131030aData according to IEC 60747and per semiconductor unless otherwise specified
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