AS321KTR-G1 - BCD Semiconductor Manufacturing Limited

LOW POWER SINGLE OPERATIONAL AMPLIFIER AS321

Data Sheet

1

May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

General Description

The AS321 is a high gain and internally frequency

compensated operational amplifier specifically

designed to operate from a single power supply. Opera-

tion from split power supply is also possible and the

low power supply current drain is independent of the

magnitude of the power supply voltages. Typical

applications include battery charger, active filters,

general purpose controllers and most conventional

operational amplifier circuits.

The AS321 is compatible with industry standard 321.

The AS321 is available in SOT-23-5 packages.

Features

·Excellent Phase Margin: 60 deg.

·Large Voltage Gain: 100dB (Typical)

·Low Input Bias Current: 20nA (Typical)

·Low Input Offset Voltage: 2mV (Typical)

·Low Supply Current: 0.35mA at VCC=5V

·Wide Power Supply Voltage:

Single Supply: 3V to 36V

Dual Supplies: ±1.5V to ±18V

·Wide Input Common Mode Voltage Range: 0V to

VCC-1.5V

Applications

·Battery Charger

·Active Filters

·General Purpose Controllers, Instruments

Figure 1. Package Type of AS321

SOT-23-5

LOW POWER SINGLE OPERATIONAL AMPLIFIER AS321

Data Sheet

2

May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

Functional Block Diagram

OUTPUT

INPUT +

INPUT -

VEE

Figure 2. Pin Configuration of AS321 (Top View)

Figure 3. Functional Block Diagram of AS321

Pin Configuration

K Package

(SOT-23-5)

VCC

Q2

Q4

Q3

Q1

Q8 Q9

6µA4µA

Q10

Q11

50µA

Q5

Q6

Q13

Rsc

Cc

100µA

Q7

INPUT+

OUTPUT

Q12

VCC

VEE

INPUT-

1

2

34

5

LOW POWER SINGLE OPERATIONAL AMPLIFIER AS321

Data Sheet

3

May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

Parameter Symbol Value Unit

Power Supply Voltage VS

(VCC-VEE)40 V

Differential Input Voltage VID 40 V

Input Voltage VIN -0.3 to 40 V

Thermal Resistance to Ambient Rθ JA 260 oC/W

Operating Junction Temperature TJ150 oC

Storage Temperature Range TSTG -65 to 150 oC

Lead Temperature (Soldering, 10 Seconds) TLEAD 260 oC

Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.

These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated

under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods

may affect device reliability.

Absolute Maximum Ratings (Note 1)

Recommended Operating Conditions

Parameter Symbol Min Max Unit

Supply Voltage VCC 336V

Ambient Operating Temperature Range TA-40 85 oC

Ordering Information

BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with

"G1" suffix are available in green packages.

Package Temperature Range

Part Number Marking ID

Packing Type

Lead Free Green Lead Free Green

SOT-23-5 -40 to 85oCAS321KTR-E1 AS321KTR-G1 E6T G6T Tape & Reel

Circuit Type

Package

E1: Lead Free

AS321

TR: Tape and Reel

K: SOT-23-5

-

G1: Green

LOW POWER SINGLE OPERATIONAL AMPLIFIER AS321

Data Sheet

4

May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

Electrical Characteristics

Parameter Symbol Conditions Min Typ Max Unit

Input Offset Voltage VIO

VO=1.4V, RS=0Ω, VCC=5V to 30V (Note

3)

25

mV

7

Average Temperature Coeffi-

cient of Input Offset Voltage ∆VIO/∆TTA=-40 to 85oC7µV/oC

Input Bias Current IBIAS IIN+ or IIN-, VCM=0V 20 100 nA

200

Input Offset Current IIO IIN+ - IIN-, VCM=0V 530

nA

100

Input Common Mode Voltage

Range (Note 4) VCM VCC=30V, CMRR≥50dB 0VCC-1.5 V

Supply Current ICC

RL=∞, VCC=5V 0.35 0.80 mA

0.45 1.0

RL=∞, VCC=30V 0.45 1.2 mA

0.65 1.5

Large Signal Voltage Gain GVVCC=15V, VO=1V to 11V, RL≥2kΩ85 100 dB

80

Common Mode Rejection

Ratio CMRR VCM=0V to (VCC-1.5)V, RS≤10kΩ60 70 dB

60

Power Supply Rejection

Ratio PSRR VCC=5V to 30V, RS≤10kΩ70 100 dB

60

Output Current

Source ISOURCE VIN+=1V, VIN-=0V, VCC=15V, VO=2V 20 40 mA

20

Sink ISINK

VIN+=0V, VIN-=1V, VCC=15V, VO=2V 10 15 mA

5

VIN+=0V, VIN-=1V, VCC=15V, VO=0.2V 12 50 µA

Output Short Circuit Current

to Ground ISC VCC=15V 40 60 mA

Output Voltage Swing

VOH

VCC=30V, RL=2kΩ26

V

26

VCC=30V, RL=10kΩ27 28

27

VOL VCC=5V, RL= 10kΩ520

mV

30

Limits in standard typeface are for TA=25oC, bold typeface applies over -40oC to 85oC (Note 2), VCC=5V, VEE=0V, VO=1.4V

unless otherwise specified.

LOW POWER SINGLE OPERATIONAL AMPLIFIER AS321

Data Sheet

5

May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

Electrical Characteristics (Continued)

Parameter Symbol Conditions Min Typ Max Unit

Total Harmonic Distortion THD f=1kHZ, AV=20dB, RL=2kΩ,

VO=2Vp-p, CL=100pF, VCC=30V 0.015 %

Phase Margin φM60 Deg

Thermal Resistance

(Junction to Case) θJC SOT-23-5 101 oC/W

Limits in standard typeface are for TA=25oC, bold typeface applies over -40oC to 85oC (Note 2), VCC=5V, VEE=0V, VO=1.4V

unless otherwise specified.

Note 2: Limits over the full temperature are guaranteed by design, but not tested in production.

Note 3: Over the full input common-mode range 0V to VCC-1.5V(at 25oC).

Note 4: The input common-mode voltage of either input signal voltage should not be allowed to go negatively by

more than 0.3V (at 25oC). The upper end of the common-mode voltage range is VCC-1.5V (at 25oC), but either or

both inputs can go to +36V without damages, independent of the magnitude of the VCC.

Typical Performance Characteristics

0 5 10 15

0

5

10

15

POSITIVE

NEGATIVE

Input Voltage (+VDC)

Power Supply Voltage (+VDC)

Figure 4. Input Voltage Range Figure 5. Input Current

-25 0 25 50 75 100 125

0

2

4

6

8

10

12

14

16

18

20

Input Current (nA)

Temperature (oC)

LOW POWER SINGLE OPERATIONAL AMPLIFIER AS321

Data Sheet

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May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

Figure 6. Supply Current Figure 7. Voltage Gain

0 5 10 15 20 25 30 35 40

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

Supply Current (mA)

Supply Voltage (V)

0 8 16 24 32 40

60

75

90

105

120

Power Supply Voltage (V)

Voltage Gain (dB)

RL=2KΩ

RL=20KΩ

Electrical Characteristics (Continued)

Figure 8. Open Loop Gain vs.Frequency Figure 9. Voltage Follower Pulse Response

Input

Time (µs)

Output

Voltage (V) Voltage (V)

0 4 8 1216202428323640

0

1

2

3

1

2

3

4

0

-20

0

20

40

60

80

0.2k 1k 10k 100k 1M 2M

Open Loop Gain (dB)

Frequency (Hz)

VCC=30V, VEE=0V

RL=2kΩ, CL=100pF

LOW POWER SINGLE OPERATIONAL AMPLIFIER AS321

Data Sheet

7

May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

Figure 10. Voltage Follower Pulse Response

(Small Signal)

Time (µs)

Output Voltage (mV)

Figure 11. Large Signal Frequency Response

Typical Performance Characteristics (Continued)

04812

16 20

100

200

300

400

500

600

700

800

1k 10k 100k 1M

0

5

10

15

20

Frequency (Hz)

Output Swing (V)

Figure 12. Output Characteristics: Current Sourcing Figure 13. Output Characteristics: Current Sinking

1E-3 0.01 0.1 1 10 100

0.01

0.1

1

10

VCC=15V

Output Voltage (V)

Output Sink Current (mA)

VCC=5V

0.1 1 10 100

0

1

2

3

4

5

6

7

8

Output Voltage Referenced to Vcc (V)

Output Source Current (mA)

LOW POWER SINGLE OPERATIONAL AMPLIFIER AS321

Data Sheet

8

May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

Figure 14. Current Limiting

-25 0 25 50 75 100 125

0

10

20

30

40

50

60

70

80

90

100

Output Current (mA)

Temperature (oC)

Typical Performance Characteristics (Continued)

Figure 17. DC Summing AmplifierFigure 16. Power Amplifier

Typical Application

R1 910K

VO

R2 100K

R3 91K

VIN(+)

VCC

RL

AS321

-

+

R6 100k

VO

R5

100k

R1 100k

R2 100k

R3 100k

R4 100k

+V1

+V2

+V3

+V4

AS321

+

-

LOW POWER SINGLE OPERATIONAL AMPLIFIER AS321

Data Sheet

9

May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

Figure 20. Pulse Generator

Figure 18. AC Coupled Non-Inverting Amplifier

Figure 21. DC Coupled Low-Pass Active Filter

Figure 19. Fixed Current Sources

Typical Application (Continued)

VCC

R4

3K

R3

2K

+

-

2V

+

-

2V

I1 I2

1mA

AS321

R1

2K R2

-

+

R5 100K

R3 100K

R4

100

K

R2 100K

R1 1M

VO

VCC

AS321

0.001µF

-

+

R2 16KR1 16K

VIN

R3

100k

AS321

R4

100k

C2

0.01µF

C1 0.01µF

f0

V0

0fo=1KHz

Q=1

AV=2

+

-

VO

R4 100k

VCC

R3

1M

R1 100k R2 1M

C1

0.1µF

CIN

R5

100k

COVO

AS321

RL

10k

C2

10µF

AV=1+R2/R1

AV=11 (As shown)

-

+

AC

RB

6.2k

LOW POWER SINGLE OPERATIONAL AMPLIFIER AS321

Data Sheet

10

May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

Mechanical Dimensions

SOT-23-5 Unit: mm(inch)

2.820(0.111)

2.650(0.104)

1.500(0.059)

0.000(0.000)

0.300(0.012)

0.950(0.037)

0.900(0.035)

0.100(0.004)

0.200(0.008)

0.300(0.012)

8°

0°

3.020(0.119)

1.700(0.067)

2.950(0.116)

0.400(0.016)

0.150(0.006)

1.300(0.051)

0.200(0.008)

0.600(0.024)

1.800(0.071)

2.000(0.079)

0.700(0.028)

REF

TYP

1.450(0.057)

MAX

IMPORTANT NOTICE

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-

cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility fo r use of any its products for any

particular purpose, nor does BCD Semiconductor Man ufacturing Limited assume any liability arising out of the application or use

of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or

other rights nor the rights of others.

- Wafer Fab

Shanghai SIM-BCD Semiconductor Manufacturing Limited

800, Yi Shan Road, Shanghai 200233, China

Tel: +86-21-6485 1491, Fax: +86-21-5450 0008

BCD Semiconductor Manufacturing Limited

MAIN SITE

REGIONAL SALES OFFICE

Shenzhen Office

Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office

Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office

Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China

Tel: +86-755-8826 7951

Fax: +86-755-8826 7865

Taiwan Office

BCD Semiconductor (Taiwan) Company Limited

4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,

Taiwan

Tel: +886-2-2656 2808

Fax: +886-2-2656 2806

USA Office

BCD Semiconductor Corporation

30920 Huntwood Ave. Hayward,

CA 94544, U.S.A

Tel : +1-510-324-2988

Fax: +1-510-324-2788

- IC Design Group

Advanced Analog Circuits (Shanghai) Corporation

8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China

Tel: +86-21-6495 9539, Fax: +86-21-6485 9673

BCD Semiconductor Manufacturing Limited

http://www.bcdsemi.com

BCD Semiconductor Manufacturing Limited

IMPORTANT NOTICE

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-

cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any

particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use

of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or

other rights nor the rights of others.

- Wafer Fab

Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.

800 Yi Shan Road, Shanghai 200233, China

Tel: +86-21-6485 1491, Fax: +86-21-5450 0008

MAIN SITE

REGIONAL SALES OFFICE

Shenzhen Office

Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office

Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,

China

Tel: +86-755-8826 7951

Fax: +86-755-8826 7865

Taiwan Office

BCD Semiconductor (Taiwan) Company Limited

4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,

Taiwan

Tel: +886-2-2656 2808

Fax: +886-2-2656 2806

USA Office

BCD Semiconductor Corp.

30920 Huntwood Ave. Hayward,

CA 94544, USA

Tel : +1-510-324-2988

Fax: +1-510-324-2788

- Headquarters

BCD Semiconductor Manufacturing Limited

No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China

Tel: +86-21-24162266, Fax: +86-21-24162277