This is information on a product in full production.
November 2012 Doc ID 022863 Rev 2 1/17
17
STF15N65M5, STFI15N65M5,
STP15N65M5
N-channel 650 V, 0.308 Ω typ., 11 A MDmesh™ V Power MOSFET
in TO-220FP, I2PAKFP and TO-220 packages
Datasheet — production data
Features
■Worldwide best RDS(on) * area
■Higher VDSS rating and high dv/dt capability
■Excellent switching performance
■100% avalanche tested
Applications
■Switching applications
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Figure 1. Internal schematic diagram
Order codes VDS @
TJmax
RDS(on)
max ID
STF15N65M5
710 V < 0.34 Ω11 ASTFI15N65M5
STP15N65M5
TO-220
TO-220FP
I2PAKFP
12
3
123
TAB
1
23
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Table 1. Device summary
Order codes Marking Package Packaging
STF15N65M5
15N65M5
TO-220FP
Tu b eSTFI15N65M5 I2PAKFP
STP15N65M5 TO-220
www.st.com
Contents STF15N65M5, STFI15N65M5, STP15N65M5
2/17 Doc ID 022863 Rev 2
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
STF15N65M5, STFI15N65M5, STP15N65M5 Electrical ratings
Doc ID 022863 Rev 2 3/17
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220 TO-220FP
I2PAK F P
VGS Gate-source voltage ± 25 V
IDDrain current (continuous) at TC = 25 °C 11 11(1)
1. Limited by maximum junction temperature.
A
IDDrain current (continuous) at TC = 100 °C 6.9 6.9(1) A
IDM (1) Drain current (pulsed) 44 44(1) A
PTOT Total dissipation at TC = 25 °C 85 25 W
dv/dt (2)
2. ISD ≤ 11 A, di/dt ≤ 400 A/µs; VDD = 400 V, VDS(peak) < V(BR)DSS
Peak diode recovery voltage slope 15 V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
2500 V
Tstg Storage temperature - 55 to 150 °C
TjMax. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
TO-220FP
I2PAKFP TO-220
Rthj-case Thermal resistance junction-case max 5 1.47 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
IAR
Avalanche current, repetetive or not repetetive
(pulse width limited by Tjmax ) 2.5 A
EAS
Single pulse avalanche energy (starting tj=
25°C, ID= IAR; VDD=50 V) 160 mJ
Electrical characteristics STF15N65M5, STFI15N65M5, STP15N65M5
4/17 Doc ID 022863 Rev 2
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source
breakdown voltage ID = 1 mA, VGS = 0 650 V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 650 V
VDS = 650 V, TC=125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0) VGS = ± 25 V ± 100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V
RDS(on)
Static drain-source on-
resistance VGS = 10 V, ID = 5.5 A 0.308 0.34 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 -
816
23
2.6
-
pF
pF
pF
Co(tr)(1)
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
Equivalent
capacitance time
related VDS = 0 to 520 V, VGS = 0
-70-pF
Co(er)(2)
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
Equivalent
capacitance energy
related
-21-pF
RG
Intrinsic gate
resistance f = 1 MHz open drain - 5 - Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 5.5 A,
VGS = 10 V
(see Figure 18)
-
22
5.5
11
-
nC
nC
nC
STF15N65M5, STFI15N65M5, STP15N65M5 Electrical characteristics
Doc ID 022863 Rev 2 5/17
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(V)
tr (V)
tf (i)
tc(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
VDD = 400 V, ID = 7 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19 and
Figure 22)
-
30
8
11
12.5
-
ns
ns
ns
ns
Table 8. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISDM (1)
1. Pulse width limited by safe operating area.
Source-drain current
Source-drain current (pulsed) -11
44
A
A
VSD (2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage ISD = 11 A, VGS = 0 - 1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 11 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 22)-
247
2.4
19.5
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 11 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 22)
-
312
3
19
ns
µC
A
Electrical characteristics STF15N65M5, STFI15N65M5, STP15N65M5
6/17 Doc ID 022863 Rev 2
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220FP
and I2PAKFP
Figure 3. Thermal impedance for TO-220FP
and I2PAKFP
Figure 4. Safe operating area for TO-220 Figure 5. Thermal impedance for TO-220
Figure 6. Output characteristics Figure 7. Transfer characteristics
I
D
10
1
0.1
0.01
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single
pulse
AM15286v1
I
D
10
1
0.1
0.01
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max RDS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single
pulse
AM15285v1
I
D
15
10
5
0010 V
DS
(V)
20
(A)
515
20
VGS= 6 V
VGS= 7 V
VGS= 9, 10 V
25
VGS= 8 V
AM15287v1
I
D
15
10
5
035V
GS
(V)
7
(A)
468
20
9
VDS= 25 V
AM152887v1
STF15N65M5, STFI15N65M5, STP15N65M5 Electrical characteristics
Doc ID 022863 Rev 2 7/17
Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance
Figure 10. Capacitance variations Figure 11. Output capacitance stored energy
Figure 12. Normalized gate threshold voltage
vs temperature
Figure 13. Normalized on-resistance vs
temperature
V
GS
6
4
2
005Q
g
(nC)
(V)
20
8
10 15
10
V
DD
=520V
I
D
=5.5A
25
300
200
100
0
400
500
V
DS
(V)
V
DS
12
AM15289v1
R
DS(on)
0.31
0.29
0.27
0.25
04I
D
(A)
(Ω)
26
0.33
0.35V
GS
=10V
810
AM15293v1
C
1000
100
10
1
0.1 10 V
DS
(V)
(pF)
1100
Ciss
Coss
Crss
AM15290v1
E
oss
1
0.5
0
0100 V
DS
(V)
(µJ)
400
1.5
200 300
2
2.5
500 600
3
3.5
4
AM15291v1
V
GS(th)
1.00
0.90
0.80
0.70
-50 0T
J
(°C)
(norm)
-25
1.10
75
25 50 100
I
D
= 250 µA
V
DS
= V
GS
AM05459v2
R
DS(on)
1.7
1.3
0.9
0.5
-50 0T
J
(°C)
(norm)
-25 75
25 50 100
0.7
1.1
1.5
1.9
2.1 VGS= 10 V
ID= 5.5 A
AM05460v2
Electrical characteristics STF15N65M5, STFI15N65M5, STP15N65M5
8/17 Doc ID 022863 Rev 2
Figure 14. Source-drain diode forward
characteristics
Figure 15. Normalized BVDSS vs temperature
Figure 16. Switching losses vs gate resistance
(1)
1. Eon including reverse recovery of a SiC diode
V
SD
020 I
SD
(A)
(V)
10 50
3040
0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
=-50°C
T
J
=150°C
T
J
=25°C
AM05461v1
V
DS
-50 0T
J
(°C)
(norm)
-25 75
25 50 100
0.92
0.94
0.96
0.98
1.00
1.04
1.06
1.02
I
D
= 1mA
1.08
AM10399v1
E
0020 RG(Ω)
(μJ)
10 30
20
40
40
ID=7A
VDD=400V Eon
Eoff
60
VGS=10V
80
50
100
120
AM15292v1
STF15N65M5, STFI15N65M5, STP15N65M5 Test circuits
Doc ID 022863 Rev 2 9/17
3 Test circuits
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
Figure 19. Test circuit for inductive load
switching and diode recovery times
Figure 20. Unclamped inductive load test
circuit
Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform
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Inductive Load Turn -off
Id
Vgs
Vds
90%Vds
10%Id
90%Vgson
t
d
(v)
t
c
(off)
10%Vds
90%Id
Vgs(I(t))
on
t
f
(i)
t
r
(v)
))
Package mechanical data STF15N65M5, STFI15N65M5, STP15N65M5
10/17 Doc ID 022863 Rev 2
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
STF15N65M5, STFI15N65M5, STP15N65M5 Package mechanical data
Doc ID 022863 Rev 2 11/17
Table 9. TO-220FP mechanical data
Dim.
mm
Min. Typ. Max.
A4.4 4.6
B2.5 2.7
D2.5 2.75
E 0.45 0.7
F0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2
Package mechanical data STF15N65M5, STFI15N65M5, STP15N65M5
12/17 Doc ID 022863 Rev 2
Figure 23. TO-220FP drawing
STF15N65M5, STFI15N65M5, STP15N65M5 Package mechanical data
Doc ID 022863 Rev 2 13/17
Figure 24. I2PAKFP (TO-281) drawing
Table 10. I2PAKFP (TO-281) mechanical data
Dim.
mm
Min. Typ. Max.
A4.40
-
4.60
B2.50 2.70
D2.50 2.75
D1 0.65 0.85
E0.45 0.70
F0.75 1.00
F1 1.20
G4.95 5.20
H 10.00 10.40
L1 21.00 23.00
L2 13.20 14.10
L3 10.55 10.85
L4 2.70 3.20
L5 0.85 1.25
L6 7.30 7.50
Package mechanical data STF15N65M5, STFI15N65M5, STP15N65M5
14/17 Doc ID 022863 Rev 2
Table 11. TO-220 type A mechanical data
Dim.
mm
Min. Typ. Max.
A4.40 4.60
b0.61 0.88
b1 1.14 1.70
c0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e2.40 2.70
e1 4.95 5.15
F1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L13 14
L1 3.50 3.93
L20 16.40
L30 28.90
∅P3.75 3.85
Q2.65 2.95
STF15N65M5, STFI15N65M5, STP15N65M5 Package mechanical data
Doc ID 022863 Rev 2 15/17
Figure 25. TO-220 type A drawing
Revision history STF15N65M5, STFI15N65M5, STP15N65M5
16/17 Doc ID 022863 Rev 2
5 Revision history
Table 12. Document revision history
Date Revision Changes
05-Mar-2012 1 First release.
09-Nov-2012 2
– The part number STB15N65M5 has been moved to a separate
datasheet.
– Added Section 2.1: Electrical characteristics (curves).
– Minor text changes.
STF15N65M5, STFI15N65M5, STP15N65M5
Doc ID 022863 Rev 2 17/17
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