2SJ218
Silicon P-Channel MOS FET
November 1996
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• 4 V gate drive device
Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-3PFM
1. Gate
2. Drain
3. Source
123
D
G
S
2SJ218
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS –60 V
Gate to source voltage VGSS ±20 V
Drain current ID–45 A
Drain peak current ID(pulse)*1–180 A
Body to drain diode reverse drain current IDR –45 A
Channel dissipation Pch*260 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
2SJ218
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
voltage V(BR)DSS –60 — — V ID = –10 mA, VGS = 0
Gate to source breakdown
voltage V(BR)GSS ±20——V I
G
= ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0
Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0
Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V ID = –1 mA, VDS = –10 V
Static drain to source on state
resistance RDS(on) — 0.033 0.042 ΩID = –20 A, VGS = –10 V*1
— 0.045 0.06 ID = –20 A, VGS = –4 V*1
Forward transfer admittance |yfs|1625—S I
D
= –20 A, VDS = –10 V*1
Input capacitance Ciss — 3800 — pF VDS = –10 V, VGS = 0,
f = 1 MHz
Output capacitance Coss — 2000 — pF
Reverse transfer capacitance Crss — 490 — pF
Turn-on delay time td(on) —30—nsI
D
= –20 A, VGS = –10 V,
RL = 1.5 Ω
Rise time tr— 235 — ns
Turn-off delay time td(off) — 670 — ns
Fall time tf— 450 — ns
Body to drain diode forward
voltage VDF — –1.35 — V IF = –45 A, VGS = 0
Body to drain diode reverse
recovery time trr — 300 — ns IF = –45 A, VGS = 0,
diF/dt = 50 A/µs
Note 1. Pulse test
See characteristic curves of 2SJ217
2SJ218
4
120
80
40
0 50 100 150
Case Temperature TC (°C)
Power vs. Temperature Derating
Channel Dissipation Pch (W)
–1000
–100
–10
–1 –1 –10 –100
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Maximum Safe Operation Area
–300
–30
–3
–0.1 –0.3 –3 –30
Ta = 25°C
10 µs
100 µs
1 ms
DC Operation (T
C
= 25°C)
PW = 10 ms (1 Shot)
Operation in this area
is limited by R
DS (on)
3
Pulse Width PW (s)
Normalized Transient Thermal Impedance γS (t)
1.0
0.1
0.3
D = 1
10 µ
0.03
0.01 100 µ10 m 100 m 1 10
1 m
TC = 25°C
0.5
0.2
0.1
0.05
0.02
0.01
1 Shot Pulse
TPW
PDM
D = T
PW
θch–c (t) = γS (t) · θch–c
θch–c = 2.08°C/W, TC = 25°C
Normalized Transient Thermal Impedance vs. Pulse Width
2SJ218
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1. This document may, wholly or partially, be subject to change without notice.
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of this document without Hitachi’s permission.
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other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
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or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
