Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 1
1Publication Order Number:
MBR1080/D
MBR1080G,
MBR1090G,
MBR10100G,
NRVB10100G
SWITCHMODE
Power Rectifiers
Features
Guard−Ring for Stress Protection
Low Forward Voltage
175C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Low Power Loss/High Efficiency
High Surge Capacity
Low Stored Charge Majority Carrier Conduction
AEC−Q101 Qualified and PPAP Capable
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are Pb−Free*
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260C Max. for 10 Seconds
ESD Rating:
Human Body Model = 3B
Machine Model = C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SCHOTTKY BARRIER
RECTIFIERS
10 AMPERES, 80 to 100 VOLTS
31, 4
TO−220AC
CASE 221B
MARKING DIAGRAM
AY WWG
B10x0
KA
Device Package Shipping
ORDERING INFORMATION
MBR10100G TO−220
(Pb−Free)
50 Units/Rail
http://onsemi.com
MBR1090G TO−220
(Pb−Free)
50 Units/Rail
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
B10x0 = Device Code
x = 8, 9 or 10
KA = Diode Polarity
MBR1080G TO−220
(Pb−Free)
50 Units/Rail
NRVB10100G TO−220
(Pb−Free)
50 Units/Rail
MBR1080G, MBR1090G, MBR10100G, NRVB10100G
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol
MBR/NRVB
Unit
1080 1090 10100
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
80 90 100 V
Average Rectified Forward Current (Rated VR) TC = 133C IF(AV) 10 A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 133C
IFRM 20
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM 150
A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 0.5 A
Operating Junction Temperature (Note 1) TJ*65 to +175 C
Storage Temperature Tstg *65 to +175 C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Thermal Resistance, Junction−to−Case RqJC 2.0 C/W
Maximum Thermal Resistance, Junction−to−Ambient RqJA 60 C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 10 Amps, TC = 125C)
(iF = 10 Amps, TC = 25C)
(iF = 20 Amps, TC = 125C)
(iF = 20 Amps, TC = 25C)
vF0.7
0.8
0.85
0.95
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TC = 125C)
(Rated dc Voltage, TC = 25C)
iR6.0
0.10
mA
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
MBR1080G, MBR1090G, MBR10100G, NRVB10100G
http://onsemi.com
3
Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current
Figure 3. Typical Current Derating, Case Figure 4. Typical Current Derating, Ambient
Figure 5. Forward Power Dissipation
0.60
vF, INSTANTANEOUS VOLTAGE (VOLTS)
20
50
10
2.0 4.00
IF(AV), AVERAGE CURRENT (AMPS)
10
4.0
3.0
2.0
1.0
0
3.0
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
5.0
3.0
0.2 0.4 0.8
P
5.0 106.0
7.0
1.0
0.5
1.0
1.0 7.0 8.0 9.0
5.0
6.0
TJ = 25C
150C
, AVERAGE POWER DISSIPATION (WATTS)
F(AV)
SQUARE WAVE
dc
TA = 25C
125C100C
0.50.1 0.3 0.7 0.9
9.0
8.0
IPK/IAV = p
IPK/IAV = 5.0
IPK/IAV = 10
IPK/IAV = 20
VR, REVERSE VOLTAGE (VOLTS)
0
I
20 40 60 80
0.1
1.0
, REVERSE CURRENT (mA)
R
10
TJ = 150C
125C
100C
0.01
25C
100
0.0001
0.001
80
TC, CASE TEMPERATURE (C)
15
0
I
100 120 140 160
, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
SQUARE WAVE
dc
10
20
RATED VOLTAGE APPLIED
RqJC = 2C/W
180
5.0
TA, AMBIENT TEMPERATURE (C)
200
20
0
40
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
60 80 160
dc
15
10
100 120 140
RATED VOLTAGE
APPLIED
SQUARE WAVE
dc
(HEATSINK)
RqJA = 16C/W
(NO HEATSINK)
RqJA = 60C/W
5.0
180
MBR1080G, MBR1090G, MBR10100G, NRVB10100G
http://onsemi.com
4
PACKAGE DIMENSIONS
TO−220
CASE 221B−04
ISSUE E
B
R
J
D
G
L
H
QT
U
A
K
C
S
4
13
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.595 0.620 15.11 15.75
B0.380 0.405 9.65 10.29
C0.160 0.190 4.06 4.82
D0.025 0.035 0.64 0.89
F0.142 0.161 3.61 4.09
G0.190 0.210 4.83 5.33
H0.110 0.130 2.79 3.30
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.14 1.52
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.14 1.39
T0.235 0.255 5.97 6.48
U0.000 0.050 0.000 1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
F
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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Phone: 81−3−5817−1050
MBR1080/D
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