BUX98AP
HIGH POWER NPN SILICON TRANSISTOR
■SGS -THO MS ON PRE F ERRE D SALES T YP E
■NPN TRANSISTOR
■HIGH VOLTAGE CAPABILITY
■HIGH CURRENT CAPABILITY
■FAST SWITCHING SPEED
APPLICATIONS
■HIGH F REQ UE N CY AND EF FICE N CY
CONVER TERS
■LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BUX98AP is a silicon multiepitaxial mesa
NPN transistor in jedec TO-218 plastic package,
intended for use in industrial applications from
single and three-phase mains operation.
INTERNAL SCHEMATI C DI AGRAM
June 1997
123
TO-218 (SO T-93)
ABS O LUT E MAX IM UM RATING S
Symbol Parameter Value Unit
VCER Collector-Emitter Voltage (RBE = ≤ 10 Ω) 1000 V
VCES Collector-Base Voltage (VBE = 0) 1000 V
VCEO Collector-Emitter Voltage (IB = 0) 450 V
VEBO Emitter-Base Voltage (IC = 0) 7 V
ICCollector Current 24 A
ICM Collector Peak Current (tp < 5 ms) 36 A
IBBase Current 5 A
IBM Base Peak Current (tp < 5 ms) 8 A
Ptot Total Power Dissipation at Tcase < 25 oC 200 W
Tstg Storage Temperature -65 to 150 oC
TjMax Operating Junction Temperature 150 oC
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THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 0.63 oC/W
ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICER Collector Cut-off
Current (RBE = 10 Ω)VCE = VCES
VCE = VCES TCASE = 125 oC1
8µA
mA
ICES Collector Cut-off
Current (VBE = 0 ) VCE = VCES
VCE = VCES TCASE = 125 oC400
4µA
mA
ICEO Collector Cut-off
Current (IB = 0) VCE = VCEO 2mA
I
EBO Emitter Cut-off C urrent
(IC = 0) VEB = 5 V 2 mA
VCEO(sus)∗Collector-Emitter
Sustaining Voltage IC = 200 mA 450 V
VCER(sus)∗Collector-Emitter
Sustaining Voltage L = 2mH IC = 1 A 1000 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 16 A IB = 3.2 A 1.2 V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = 16 A IB = 3.2 A 1.5 V
ton Turn-on Time VCC = 150 V IC = 20 A 1 µs
tsStorage Time IB1 = - IB2 = 4 A 3 µs
tfFall Time 0.8 µs
ton Turn-on Time VCC = 150 V IC = 16 A 1 µs
tsStorage Time IB1 = - IB2 = 3.2 A 3 µs
tfFall Time 0.8 µs
∗ P ulsed: P ulse durati on = 300 µs, duty cycle = 1.5 %
BUX98AP
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 4.9 0.185 0.193
C 1.17 1.37 0.046 0.054
D2.5 0.098
E 0.5 0.78 0.019 0.030
F 1.1 1.3 0.043 0.051
G 10.8 11.1 0.425 0.437
H 14.7 15.2 0.578 0.598
L2 – 16.2 – 0.637
L3 18 0.708
L5 3.95 4.15 0.155 0.163
L6 31 1.220
R – 12.2 – 0.480
Ø 4 4.1 0.157 0.161
R
A
C
D
E
H
FG
L6
¯
L3
L2
L5
12 3
TO-218 (SOT-93) MECHANICAL DATA
P025A
BUX98AP
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for th e
conse quences of us e of s uch information n or for any infringement of patents or oth er rights of third parties which may results from its use. No
license is granted by implicat ion or ot h erwise under any patent or patent rights of SGS-THOMSON Micro el ectronics . Specificati ons ment ioned
in this publicat ion are subject to change without noti ce. This publicat ion su pers edes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
writte n approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - A ll Rights Reserved
SGS-THOMSO N Microelectronics GROUP OF COMPANIES
Australia - Braz il - Canada - China - France - Germany - Hong Kong - I taly - Japan - Korea - Malay sia - Malta - Moroc co - The Netherlands -
Singapore - Spain - Sweden - Switze rland - Taiwan - Thailand - Unit ed Kingdom - U.S.A
. . .
BUX98AP
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