1994. 3. 23 1/1
SEMICONDUCTOR
TECHNICAL DATA
KTC3198L
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
LOW NOISE AMPLIFIER APPLICATION.
FEATURES
·Excellent hFE Linearity
: hFE(2)=100(Typ.) at VCE=6V, IC=150mA
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).
·Low Noise : NF=0.2dB(Typ.). f=(1kHz).
·Complementary to KTA1266L. (O,Y,GR class)
MAXIMUM RATING (Ta=25℃)
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2 3
B
AJ
KG
H
FF
L
E
C
E
C
M
N
0.45 MAXM
1.00N
1. EMITTER
2. COLLECTOR
3. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Note : hFE(1) Classification O:70～140, Y:120～240, GR:200～400, BL:300~700
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC150 mA
Emitter Current IE-150 mA
Collector Power Dissipation PC625 mW
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 μA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 μA
DC Current Gain
hFE(1) (Note) VCE=6V, IC=2mA 70 - 700
hFE(2) VCE=6V, IC=150mA 25 100 -
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V
Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA - - 1.0 V
Transition Frequency fTVCE=10V, IC=1mA 80 - -MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.0 3.0 pF
Base Intrinsic Resistance rbb’ VCB=10V, IE=1mA, f=30MHz - 50 - Ω
Noise Figure
NF(1) VCE=6V, IC=0.1mA, f=100Hz, Rg=10kΩ- 0.5 6.0
dB
NF(2) VCE=6V, IC=0.1mA, f=1kHz, Rg=10kΩ- 0.2 3.0
