1 - 2
© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C; RGS = 1 MW500 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C21A
IDM TC= 25 °C, pulse width limited by TJM 84 A
IAR TC= 25 °C21A
EAR TC= 25°C 30mJ
EAS 1.5 mJ
dv/dt IS£ IDM, di/dt £ 100 A/ms, VDD £ VDSS, 5 V/ns
TJ £ 150°C, RG = 2 W
PDTC= 25°C W
TJ-55 to +150 °C
TJM 150 °C
Tstg -55 to +150 °C
TL1.6 mm (0.063 in) from case for 10 s 300 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Features
• IXYS advanced low Qg process
• Low gate charge and capacitances
- easier to drive
- faster switching
• International standard packages
• Low RDS (on)
• Rated for unclamped Inductive load
switching (UIS) rated
• Molding epoxies meet UL 94 V-0
flammability classification
Advantages
• Easy to mount
• Space savings
• High power density
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 250 mA 500 V
VGS(th) VDS = VGS, ID = 4 mA 2 . 0 4 . 0 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS TJ = 25°C25mA
VGS = 0 V TJ = 125°C1mA
RDS(on) VGS = 10 V, ID = 0.5 ID25 0.25 W
Pulse test, t £ 300 ms, duty cycle d £ 2 %
TO-247 AD (IXFH)
G = Gate D = Drain
S = Source TAB = Drain
HiPerFETTM
Power MOSFETs
Q-Class
TO-268 (D3) (IXFT)
(TAB)
GS
VDSS = 500 V
ID25 = 21 A
RDS(on) = 0.25 W
trr £ 250 ns
IXFH 21N50Q
IXFT 21N50Q
(TAB)
Advanced Technical Information
IXYS reserves the right to change limits, test conditions, and dimensions. 98718 (4/18/00)
2 - 2
© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 20 V; ID = 0.5 • ID25, pulse test 1 4 2 0 S
Ciss 3350 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 4 25 p F
Crss 130 pF
td(on) 25 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 28 ns
td(off) RG= 2.0 W (External), 5 1 ns
tf12 ns
Qg(on) 90 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 20 nC
Qgd 40 nC
RthJC 0.45 K/W
RthCK (TO-247) 0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 21 A
ISM Repetitive; pulse width limited by TJM 84 A
VSD IF = IS, VGS = 0 V, 1 .3 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr 250 ns
QRM IF = IS, -di/dt = 100 A/ms, VR = 100 V 0.85 mC
IRM 8A
IXFH 21N50Q
IXFT 21N50Q
TO-247 AD (IXFH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A12.7 2.9 .106 .114
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
b21.9 2.1 .75 .83
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E113.3 13.6 .524 .535
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
TO-268AA (D3 PAK) Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
