Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 21N50Q IXFT 21N50Q Symbol Test Conditions VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 MW 500 V VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 21 A IDM TC = 25C, pulse width limited by TJM 84 A IAR TC = 25C 21 A EAR TC = 25C 30 mJ Maximum Ratings 1.5 mJ 5 V/ns EAS PD IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TO-247 AD (IXFH) (TAB) TO-268 (D3) (IXFT) G (TAB) S TC = 25C W TJ C -55 to +150 TJM 150 C Tstg -55 to +150 C 1.6 mm (0.063 in) from case for 10 s 300 Md Mounting torque 1.13/10 Weight TO-247 TO-268 Symbol Test Conditions VDSS VGS = 0 V, ID = 250 mA 500 VGS(th) VDS = VGS, ID = 4 mA 2.0 IGSS VGS = 20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 ms, duty cycle d 2 % Nm/lb.in. 6 4 g g Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. TJ = 25C TJ = 125C IXYS reserves the right to change limits, test conditions, and dimensions. G = Gate D = Drain S = Source TAB = Drain C TL (c) 2000 IXYS All rights reserved 500 V 21 A 0.25 W trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt dv/dt VDSS = = ID25 RDS(on) = V 4.0 V 100 nA 25 1 mA mA 0.25 W Features * IXYS advanced low Qg process * Low gate charge and capacitances - easier to drive - faster switching * International standard packages * Low RDS (on) * Rated for unclamped Inductive load switching (UIS) rated * Molding epoxies meet UL 94 V-0 flammability classification Advantages * Easy to mount * Space savings * High power density 98718 (4/18/00) 1-2 IXFH 21N50Q IXFT 21N50Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. gfs VDS = 20 V; ID = 0.5 * ID25, pulse test 14 C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) tr VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 td(off) RG = 2.0 W (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd 20 S 3350 pF 425 pF 130 pF 25 ns 28 ns 51 ns 12 ns 90 nC 20 nC 40 nC A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 K/W C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 RthJC RthCK 0.45 (TO-247) Source-Drain Diode 0.25 K/W Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 21 A ISM Repetitive; pulse width limited by TJM 84 A VSD IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % 1.3 V 250 ns mC A t rr QRM IRM IF = IS, -di/dt = 100 A/ms, VR = 100 V TO-268AA (D3 PAK) Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 (c) 2000 IXYS All rights reserved Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 TO-247 AD (IXFH) Outline 0.85 8 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Dim. Millimeter Min. Max. Inches Min. Max. L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2