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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. BC327 PNP Epitaxial Silicon Transistor Features * Switching and Amplifier Applications * Suitable for AF-Driver Stages and Low-Power Output Stages * Complement to BC337 / BC338 1 TO-92 1. Collector 2. Base 3. Emitter Ordering Information Part Number Top Mark Package Packing Method BC327BU BC327 TO-92 3L Bulk BC32716BU BC32716 TO-92 3L Bulk BC32716TA BC32716 TO-92 3L Ammo BC32725BU BC32725 TO-92 3L Bulk BC32725TA BC32725 TO-92 3L Ammo BC32740BU BC32740 TO-92 3L Bulk BC32740TA BC32740 TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Parameter Value Unit V VCES Collector-Emitter Voltage -50 VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -800 mA TJ Junction Temperature 150 C TSTG Storage Temperature -55 to 150 C (c) 2002 Fairchild Semiconductor Corporation BC327 Rev. 1.1.0 www.fairchildsemi.com BC327 -- PNP Epitaxial Silicon Transistor October 2014 Values are at TA = 25C unless otherwise noted. Symbol PD RJA Parameter Value Unit Power Dissipation 625 mW Derate Above 25C 5.0 mW/C Thermal Resistance, Junction-to-Ambient 200 C/W Note: 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit BVCEO Collector-Emitter Breakdown Voltage IC = -10 mA, IB = 0 -45 V BVCES Collector-Emitter Breakdown Voltage IC = -0.1 mA, VBE = 0 -50 V BVEBO Emitter-Base Breakdown Voltage IE = -10 A, IC = 0 -5 V Collector Cut-Off Current VCE = -45 V, IB = 0 ICES hFE1 hFE2 DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(on) fT Cob -2 VCE = -1 V, IC = -100 mA 100 VCE = -1 V, IC = -300 mA 60 -100 nA 630 IC = -500 mA, IB = -50 mA -0.7 V Base-Emitter On Voltage VCE = -1 V, IC = -300 mA -1.2 V Current Gain Bandwidth Product VCE = -5 V, IC = -10 mA, f = 20 MHz 100 MHz Output Capacitance VCB = -10 V, IE = 0, f = 1 MHz 12 pF hFE Classification Classification 16 25 40 hFE1 100 ~ 250 160 ~ 400 250 ~ 630 hFE2 60 ~ 100 ~ 170 ~ (c) 2002 Fairchild Semiconductor Corporation BC327 Rev. 1.1.0 www.fairchildsemi.com 2 BC327 -- PNP Epitaxial Silicon Transistor Thermal Characteristics(1) -20 IB= mA - 5.0 A I B = - 4.5m I B = 4.0mA A I B = - 3.5m A I B = - 3.0m A I B = - 2.5m mA IB = - 2.0 IB = -400 -300 IB = IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT -500 mA - 1.5 -200 PT = 600 mW IB = - 1.0mA IB = - 0.5mA -100 A - 80 IB= A - 70 -16 IB= A - 60 IB P T 0A =-5 -12 IB= A - 40 IB = - -8 30A A I B = - 20 -4 IB = - 10A IB = 0 IB = 0 -0 -1 -2 -3 -4 -5 -10 1000 PULSE hFE, DC CURRENT GAIN VCE = - 2.0V 100 - 1.0V 10 -1 -10 -100 -30 -40 -50 Figure 2. Static Characteristic VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 1. Static Characteristic 1 -0.1 -20 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE -10 IC = 10 IB PULSE VCE(sat) -1 -0.1 VBE(sat) -0.01 -0.1 -1000 IC[mA], COLLECTOR CURRENT -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -1000 1000 VCE = -1V PULSE fT[MHz], GAIN-BANDWIDTH PRODUCT IC[mA], COLLECTOR CURRENT =6 00 mW -100 -10 -1 -0.1 -0.4 -0.5 -0.6 -0.7 -0.8 100 10 -0.9 -1 VBE[V], BASE-EMITTER VOLTAGE -10 -100 IC[mA], COLLECTOR CURRENT Figure 5. Base-Emitter On Voltage (c) 2002 Fairchild Semiconductor Corporation BC327 Rev. 1.1.0 VCE = -5.0V Figure 6. Gain Bandwidth Product www.fairchildsemi.com 3 BC327 -- PNP Epitaxial Silicon Transistor Typical Performance Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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