HN / BC 327/328 PNP Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable . 48, 38, for AF-driver stages and low-power output stages. [: 46 These types are also available subdivided into three groups -16, -25 and -40, according to their DC current gain. As complementary types, the NPN transistors BC337 and BC338 are recommended. min, 12.5 max. 80.55 kb On special request, these transistors can be manufactured 25 . 4 in different pin configurations. Please refer to the TO-92 TRANSISTOR PACKAGE OUTLINE on page 80 for the . available pin options. B TO-92 Plastic Package Weight approx. 0.18 g Dimensions in mm Absolute Maximum Ratings (T, = 25C) Symbol Value Unit Collector Emitter Voltage HN / BC 327 ~Voes 50 V HN / BC 328 Vos 30 Vv Collector Emitter Voltage HN / BC 327 ~Voeo 45 V HN / BC 328 Vero 25 Vv Emitter Base Voltage Vino 5 V Collector Current -l, 800 mA Peak Collector Current 2 1 A Base Current -l, 100 mA Power Dissipation at Tam = 25 C Pit 625" mw Junction Temperature T, 150 C Storage Temperature Range Ts -65 to + 150 C Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case GS P FORM A AVAILABLE SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of AGMEY TECHNOLOGY LTO. )HN / BC 327/328 Characteristics at T,,,, =25 C Symbol Min. Typ. Max. Unit DC Current Gain. at -V,, = 1V, -I, = 300 mA Current Gain Group-16 hee 100 160 250 - -25 hee 160 250 400 - -40 hee 250 400 630 - at -V,.. = 1V, -I, =300 mA Current Gain Group-16 Nee 60 130 - - -25 ee 100 200 - - -40 hee 170 320 - - Thermal Resistance Junction to Ambient Air ns a - - 200 K/w Collector Emitter Cutoff Current at-V,.=45 V HN / BC 327 -loes - 2 100 nA at-V,.=25V HN / BC 328 -loes . 2 100 nA at -V,.= 45 V, T,.,= 125 C HN / BC 327 -loes - - 10 pA at -V,= 25 V, T, = 125 C HN / BC 328 lees . - 10 pA Collector Emitter Breakdown Voltage at-l,=10mA HN / BC 327 -Vier\ceo 45 - - Vv HN / BC 328 ~Vier\ceo 25 - - V Collector Emitter Breakdown Voltage at-|,=0.1mA HN / BC 327 -Vieryces 50 - - V HN / BC 328 -Vierjces 30 - - Vv Emitter Base Breakdown Voltage -Viea E60 5 - - Vv at-I,=0.1 mA Collector Saturation Voltage Voesat - 0.7 V at -|, = 500 mA, -I,= 50 mA Base Emitter Voltage Vie - - 1.2 Vv at -V,, = 1 V, -l, = 300 mA Gain Bandwidth Product f, - 100 - MHz at -V_. = 5V, -I,= 10 mA, f = 50MHz Collector Base Capacitance Coso - 12 - pF at -V., = 10 V, f = MHz ) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of AGMEY TECHNOLOGY LTO. )HN / BC 327/328 Admissible power dissipation versus ambient temperature Valid provided that leads are kept at ambient temperature at a distance of 2mm from case w HN / BC 327, BC 328 _ Collector current versus base-emitter voltage mA HN / BC 327, BC 328 10 10 10 10% 10 107 101 1 10 10s tp 5 2 10 327: Voge = 45 328: -Vop = 25 typical --- maximum 0 100 a Tam 25 C 7 0.8 Prot Ic typical 0.6 \ --- limits \ / at Topp 25 C 04 \ \ 0.2 iN \ 0 \ 0 100 200 C Tamb Pulse thermal resistance Collector-emitter cutoff current versus pulse duration versus ambient temperature Valid provided that leads are kept at ambient temperature at a distance of 2mm from case aie HN / BC 327, BC 328 No! HN / BC 327, BC 328 1 5 2 2 3 fina 10 -Icgs!9 200 C SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of AGMEY TECHNOLOGY LTO. )HN / BC 327/328 DC current gain versus collector current HN / BC 327, BC 328 Common emitter collector characteristics mA HN / BC 327, BC 328 500 83 T I =1 0.9 0.85 wo Lf 4 |i} | 300 / 0.8 Jasons 200 ZO V4 100 l 0.75 0 Vag = 0.7 V 0 1 2V - Me Common emitter Common emitter collector characteristics HN / BC 327, BC 328 3.2 2.8 collector characteristics mA HN / BC 327, BC 328 0 10 20V Ye SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of AGMEY TECHNOLOGY LTO. )HN / BC 327/328 Collector saturation voltage versus collector current v HN / BC 327, BC 328 0.5 -limits at Tamb = 25 0.4 | 2 =10 bo ~VoEsat 0.3 0.2 0.1 MHz Gain-bandwidth product versus collector current HN / BC 327, BC 328 Tamb =25C f = 20 MHz 1 2 5 10 2 5 10%2 5 10mA > Base saturation voltage versus collector current V HN / BC 327, BC 328 typical -. limits at Temp = 25 C) / = 10 7 lp Veesat J SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of AGMEY TECHNOLOGY LTO. )