Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Noise Figure
Associated Gain
Symbol
IDSS 10 30 60
35 50 -
-0.1 -0.7 -1.5
-3.0 - -
-0.45 0.50
11.0 13.0 -
VDS = 2V, VGS =0V
VDS = 2V, IDS =10mA
VDS = 2V, IDS =1mA
VDS = 2V,
IDS = 10mA,
f = 12GHz
IGS = -10µA
mA
mS
V
V
dB
dB
gm
Vp
VGSO
NF
FHX13LG
FHX14LG
Gas
Noise Figure
Associated Gain
-0.55 0.60
11.0 13.0 -dB
dB
NF
Gas
Condition Unit
Limit
Typ. Max.Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Note: RF parameters for LG devices are measured on a sample basis as follows:
Lot qty. Sample qty. Accept/Reject
1200 or less 125 (0,1)
1201 to 3200 200 (0,1)
3201 to 10000 315 (1,2)
10001 or over 500 (1,2)
AVAILABLE CASE STYLES: LG
Channel to Case
Thermal Resistance - 300 400 °C/W
Rth
1
Edition 1.1
July 1999
Item Symbol Unit
Drain-Source Voltage VDS V3.5
Gate-Source Voltage VGS V-3.0
Total Power Dissipation Pt* mW180
Storage Temperature Tstg °C-65 to +175
Channel Temperature Tch °C175
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
*Note: Mounted on Al2O3 board (30 x 30 x 0.65mm)
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 2 volts.
2. The forward and reverse gate currents should not exceed 0.2 and -0.05 mA respectively with
gate resistance of 4000Ω.
3. The operating channel temperature (Tch) should not exceed 80°C.
FEATURES
• Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13)
• High Associated Gain: 13.0dB (Typ.)@f=12GHz
• Lg ≤0.15µm, Wg = 200µm
• Gold Gate Metallization for High Reliability
• Cost Effective Ceramic Microstrip (SMT) Package
• Tape and Reel Packaging Available
FHX13LG, FHX14LG
Super Low Noise HEMT
DESCRIPTION
The FHX13LG, FHX14LG is a Super High Electron Mobility Transistor(SuperHEMTTM)
intended for general purpose, ultra-low noise and high gain amplifiers in the 2-18GHz
frequency range. The devices are packaged in cost effective, low parasitic, hermetically
sealed metal-ceramic package for high volume telecommunication, TVRO, VSAT or
other low noise applications.
Eudyna stringent Quality Assurance Program assures the highest reliability and
consistent performance.
2
FHX13LG, FHX14LG
Super Low Noise HEMT
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
1
0234
Drain-Source Voltage (V)
30
40
20
10
Drain Current (mA)
VGS =0V
-0.2V
-0.6V
-0.8V
-0.4V
LG
POWER DERATING CURVE
100
150
50
200
0
050 100 150 200
Ambient Temperature (°C)
Total Power Dissipation (mW)
3
FHX13LG, FHX14LG
Super Low Noise HEMT
Gas
OUTPUT POWER vs. INPUT POWER
FHX13LG
f=12GHz
VDS=2V
IDS=10mA
-10 -5 0 5 10
Input Power (dBm)
15
25
10
5
Output Power (dBm)
Associated Gain (dB)
NF & Gas vs. TEMPERATURE
FHX13LG
f=12GHz
VDS=2V
IDS=10mA
100 2000 300 400
Ambient Temperature (°K)
1.5
1.0
0.5
15
10
5
Noise Figure (dB)
NF & Gas vs. IDS
FHX13LG
3.0
2.5
2.0
1.5
1.0
0.5
f=12GHz
VDS=2V
VDS=2V
IDS=10mA
14
12
10
9
11
13
10 20 30
Drain Current (mA)
Noise Figure (dB)
Associated Gain (dB)
NF & Gas vs. FREQUENCY
FHX13LG
2
1
3
0
10
5
15
0
4681012 20
Frequency (GHz)
Noise Figure (dB)
Associated Gain (dB)
NF
Gas
Gas
NF
NF
4
FHX13LG, FHX14LG
Super Low Noise HEMT
NOISE PARAMETERS
FHX13LG
VDS=2V, IDS=10mA
Freq.
(GHz)
Γopt
(MAG) (ANG)
NFmin
(dB) Rn/50
2
4
6
8
10
12
14
16
18
0.96
0.92
0.86
0.79
0.71
0.61
0.50
0.38
0.24
29
57
83
107
129
150
168
-175
-161
0.33
0.34
0.35
0.37
0.40
0.45
0.53
0.63
0.83
0.22
0.20
0.15
0.11
0.07
0.04
0.04
0.06
0.10
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
Γopt
1.0
2.0
2.5 3.0
1.5
10 25 50 100
f = 12 GHz
VDS = 2V
IDS = 10mA
Γopt = 0.61∠150°
Rn/50 = 0.04
NFmin = 0.45dB
TYPICAL NOISE FIGURE CIRCLE
FHX13LG
20
15
10
5
0
4681012 20
VDS = 2V
IDS = 10mA
Ga(max)
Frequency (GHz)
Gain (dB)
Ga(max) & |S21|2 vs. FREQUENCY
|S21|2
5
S-PARAMETERS
FHX13/14LG
VDS = 2V, IDS = 10mA
FREQUENCY S11 S21 S12 S22
(MHZ) MAG ANG MAG ANG MAG ANG MAG ANG
1000 0.988 -20.0 5.327 160.1 0.015 75.7 0.574 -16.3
2000 0.956 -39.5 5.133 141.0 0.028 63.3 0.560 -32.1
3000 0.908 -58.1 4.851 123.0 0.039 50.1 0.539 -47.3
4000 0.862 -75.5 4.534 105.9 0.048 39.0 0.522 -62.0
5000 0.811 -91.6 4.213 89.7 0.053 29.3 0.502 -75.6
6000 0.763 -107.1 3.886 74.4 0.056 21.0 0.488 -89.6
7000 0.727 -121.1 3.582 60.0 0.057 13.2 0.487 -103.0
8000 0.701 -133.3 3.300 46.4 0.056 7.9 0.498 -114.9
9000 0.682 -144.1 3.078 33.8 0.055 3.5 0.515 -125.0
10000 0.659 -154.2 2.899 21.4 0.055 -0.0 0.531 -134.4
11000 0.636 -164.4 2.748 9.3 0.054 -2.6 0.544 -144.0
12000 0.618 -175.4 2.593 -3.3 0.054 -5.2 0.561 -155.1
13000 0.608 175.5 2.466 -14.8 0.054 -5.7 0.590 -164.0
14000 0.596 166.6 2.366 -26.6 0.055 -7.8 0.619 -172.4
15000 0.585 158.3 2.279 -38.3 0.056 -9.7 0.654 -179.7
16000 0.564 148.8 2.244 -50.7 0.058 -12.8 0.677 172.6
17000 0.543 138.2 2.217 -63.6 0.061 -17.6 0.701 163.4
18000 0.525 127.3 2.185 -77.1 0.063 -24.7 0.727 154.1
19000 0.506 116.2 2.143 -91.4 0.063 -33.1 0.748 143.6
20000 0.470 106.5 2.089 -105.4 0.061 -43.7 0.763 137.2
FHX13LG, FHX14LG
Super Low Noise HEMT
Download S-Parameters, click here
6
FHX13LG, FHX14LG
Super Low Noise HEMT
0.5
(0.02)
1.0
(0.039)
1.3 Max
(0.051)
0.1
(0.004)
1.5±0.3
(0.059)
1.78±0.15
(0.07)
1.5±0.3
(0.059)
4.78±0.5
Case Style "LG"
Metal-Ceramic Hermetic Package
Unit: mm(inches)
1. Gate
2. Source
3. Drain
4. Source
1.5±0.3
(0.059)
1.78±0.15
(0.07)
1.5±0.3
(0.059)
4.78±0.5
1
2
3
4