© 2010 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 600 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ600 V
VGSS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C10 A
IDM TC= 25°C, Pulse Width Limited by TJM 25 A
IATC= 25°C10 A
EAS TC= 25°C 500 mJ
dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns
PDTC= 25°C 200 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062in.) from Case for 10s 300 °C
Tsold Plastic Body for 10 Seconds 260 °C
MdMounting Torque (TO-220) 1.13 / 10 Nm/lb.in.
Weight TO-263 2.5 g
TO-220 3.0 g
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXTA10N60P
IXTP10N60P
VDSS = 600V
ID25 = 10A
RDS(on) ≤≤
≤≤
≤ 740mΩΩ
ΩΩ
Ω
DS99330F(04/10)
G = Gate D = Drain
S = Source Tab = Drain
TO-263 AA (IXTA)
GDS
TO-220AB (IXTP)
D (Tab)
GS
D (Tab)
PolarTM
Power MOSFET
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 600 V
VGS(th) VDS = VGS, ID = 250μA 3.0 5.5 V
IGSS VGS = ± 30V, VDS = 0V ±100 nA
IDSS VDS = VDSS, VGS = 0V 5 μA
TJ = 125°C 50 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Notes 1, 2 740 mΩ
Features
zInternational Standard Packages
zDynamic dv/dt Rating
zAvalanche Rated
zFast Intrinsic Rectifier
zLow QG
zLow RDS(on)
zLow Drain-to-Tab Capacitance
zLow Package Inductance
Advantages
zEasy to Mount
zSpace Savings
Applications
zDC-DC Converters
zBattery Chargers
zSwitch-Mode and Resonant-Mode
Power Supplies
zUninterrupted Power Supplies
zAC Motor Drives
zHigh Speed Power Switching
Applications
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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA10N60P
IXTP10N60P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 6 11 S
Ciss 1720 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 160 pF
Crss 14 pF
td(on) 23 ns
tr 27 ns
td(off) 65 ns
tf 21 ns
Qg(on) 32 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 12 nC
Qgd 10 nC
RthJC 0.62 °C/W
RthCH TO-220 0.50 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
IS VGS = 0V 10 A
ISM Repetitive, Pulse Width Limited by TJM 30 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 500 ns
Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
Resistive Switching Time
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10Ω (External)
IF = 10A, VGS = 0V
-di/dt = 100A/μs, VR = 100V
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Pins: 1 - Gate 2 - Drain
3 - Source
TO-220 Outline
TO-263 Outline
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© 2010 IXYS CORPORATION, All Rights Reserved
IXTA10N60P
IXTP10N60P
Fi g . 1. Ou tp u t C h ar acter i sti cs @ TJ = 25ºC
0
1
2
3
4
5
6
7
8
9
10
01234567
V
DS
- V olts
I
D
- Amperes
V
GS
= 10V
7V
6V
5V
Fig. 2. Extended Output Characteristics @ TJ = 25º C
0
4
8
12
16
20
24
0 5 10 15 20 25 30
V
DS
- V olts
I
D
- Amperes
V
GS
= 10V
7V
6V
5V
Fi g . 3. Ou tp u t C h ar acter i sti cs @ TJ = 125ºC
0
1
2
3
4
5
6
7
8
9
10
012345678910111213
V
DS
- V olts
I
D
- Am pere s
V
GS
= 10V
5V
6V
Fig. 4. RDS(on) Normalized to ID = 5A Value vs.
Junction Tem perature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 10A
I
D
= 5A
Fig. 5. RDS(on) Normalized to ID = 5A Value vs.
Drain Current
0.6
1.0
1.4
1.8
2.2
2.6
3.0
0 5 10 15 20 25
I
D
- Ampere s
R
DS(on)
- Normalized
T
J
= 125ºC
T
J
= 25ºC
V
GS
= 10V
Fi g . 6. Maximu m Dr ai n C u rren t vs.
Case Temp er atu r e
0
2
4
6
8
10
12
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA10N60P
IXTP10N60P
IXYS REF: IXF_10N60P (4J)4-18-10-D
Fig. 7. Input Admittance
0
2
4
6
8
10
12
14
16
3.2 3.6 4.0 4.4 4.8 5.2 5.6 6.0 6.4
V
GS
- Volt s
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fi g. 8. Tr ansco n d uctan ce
0
2
4
6
8
10
12
14
16
18
20
22
0 2 4 6 8 10 12 14 16
I
D
- A mperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltag e Drop of Intrinsic Diode
0
5
10
15
20
25
30
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V
SD
- V olts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35
Q
G
- NanoCoulombs
V
GS
- Vol ts
V
DS
= 300V
I
D
= 5A
I
G
= 10mA
Fig. 11. Capacitance
1
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- V olts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. Maximu m Tr ansi en t Th er mal I mped ance
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
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