AQV212S - PANASONIC - Datasheet.Company

GU PhotoMOS (AQV21❍S)

TYPES

* Indicate the peak AC and DC values.

Note: For space reasons, the initial letters of the product number “AQ” are omitted on the product seal.

The package type indicator “X” and “Z” are omitted from the seal (Ex. the label for product number AQV214S is V214S).

Super miniature design,

SOP(1 Form A) 6-pin type.

Controls load voltage

60V to 400V

GU PhotoMOS

(AQV21❍S)

Type

Output rating* Package

size

Part No. Packing quantity

Load

voltage

Load

current Tube packing style Tape and reel packing style Tube Tape and reel

AC/DC

type

60V 500mA

SOP6pin

AQV212S

AQV212SX

(Picked from the

1/2/3-pin side)

AQV212SZ

(Picked from the

4/5/6-pin side)

1 tube contains:

75 pcs.

1 batch contains:

1,500 pcs.

1,000 pcs.

100V 300mA AQV215S

AQV215SX

(Picked from the

1/2/3-pin side)

AQV215SZ

(Picked from the

4/5/6-pin side)

200V 160mA AQV217S

AQV217SX

(Picked from the

1/2/3-pin side)

AQV217SZ

(Picked from the

4/5/6-pin side)

350V 120mA AQV210S

AQV210SX

(Picked from the

1/2/3-pin side)

AQV210SZ

(Picked from the

4/5/6-pin side)

400V 100mA AQV214S

AQV214SX

(Picked from the

1/2/3-pin side)

AQV214SZ

(Picked from the

4/5/6-pin side)

600V 40mA AQV216S

AQV216SX

(Picked from the

1/2/3-pin side)

AQV216SZ

(Picked from the

4/5/6-pin side)

mm inch

FEATURES

1. 1 channel (Form A) in super

miniature design

The device comes in a super-miniature

SO package measuring (W) 4.4 × (L) 6.3

×(H) 2.1 mm (W) .173× (L) .248×(H) .083

inch —approx. 25% of the volume and

50% of the footprint size of DIP type

PhotoMOS Relays.

2. Tape and reel

The device comes standard in a tape and

reel (1,000 pcs./reel) to facilitate

automatic insertion machines.

3. Controls low-level analog signals

PhotoMOS relays feature extremely low

closed-circuit offset voltage to enable

control of low-level analog signals without

distortion.

4. Low-level off state leakage current

In contrast to the SSR with an off state

leakage current of several milliamperes,

the PhotoMOS relay features a very

small off state leakage current of typ. 100

pA even at the rated load voltage of 400

V (AQV214S).

TYPICAL APPLICATIONS

• Telephones

• Measuring instruments

• Computer

• Industrial robots

• High-speed inspection machines

6.3

.248

4.4

.173

2.1

.083

RoHS Directive compatibility information

http://www.nais-e.com/

Volume

(SOP)(DIP)

Approx. 25%

Footprint

Approx. 50%

GU PhotoMOS (AQV21❍S)

RATING

2. Electrical characteristics (Ambient temperature: 25°C 77°F)

Note: Recommendable LED forward current IF = 5mA. For type of connection

*Turn on/Turn off time

■ For Dimensions

■ For Schematic and Wiring Diagrams

■ For Cautions for Use

Item Symbol

Type of

connec-

tion

AQV212S AQV215S AQV217S AQV210S AQV214S AQV216S Remarks

Input

LED operate

current

Typical IFon —0.7 mA IL= Max.

Maximum 3 mA

LED turn off

current

Minimum IFoff —0.4 mA IL= Max.

Typical 0.65 mA

LED dropout

voltage

Typical VF—1.25 V (1.14 V at IF = 5 mA) IF= 50 mA

Maximum 1.5 V

Output

On resistance

Typical Ron A0.83 Ω2.3 Ω11 Ω23 Ω30 Ω70 ΩIF= 5 mA

IL= Max.

Within 1 s on time

Maximum 2.5 Ω4.0 Ω15 Ω35 Ω50 Ω120 Ω

Typical Ron B0.44 Ω1.15 Ω5.5 Ω11.5 Ω22.5 Ω55 ΩIF = 5 mA

IL = Max.

Within 1 s on time

Maximum 1.25 Ω2.0 Ω7.5 Ω17.5 Ω25 Ω100 Ω

Typical Ron C0.25 Ω0.6 Ω2.8 Ω6.0 Ω11.3 Ω28 ΩIF = 5 mA

IL = Max.

Within 1 s on time

Maximum 0.63 Ω1.0 Ω3.8 Ω8.8 Ω12.5 Ω50 Ω

Off state

leakage current Maximum ILeak —1 µAIF = 0 mA

VL = Max.

Transfer

characteristics

Tu rn on time* Typical Ton —0.65 ms 0.60 ms 0.25 ms 0.25 ms 0.25 ms 0.25 ms IF= 5 mA

VL = Max.

Maximum 2.0 ms 2.0 ms 1.0 ms 0.5 ms 0.5 ms 0.5 ms

Tu rn off time Typical Toff —0.08 ms 0.06 ms 0.05 ms 0.05 ms 0.05 ms 0.05 ms IF= 5 mA

VL = Max.

Maximum 0.2 ms

I/O capacitance Typical Ciso —0.8 pF f = 1 MHz

VB = 0 V

Maximum 1.5 pF

Initial I/C isola-

tion resistance Minimum Riso — 1,000 MΩ500 V DC

1. Absolute maximum ratings (Ambient temperature: 25°C 77°F)

Item Symbol Type of

connection AQV212S AQV215S AQV217S AQV210S AQV214S AQV216S Remarks

Input

LED forward current IF50 mA

LED reverse voltage VR5 V

Peak forward current IFP 1 A f = 100 Hz,

Duty factor = 0.1%

Power dissipation Pin 75 mW

Output

Load voltage (peak AC) VL60 V 100 V 200 V 350 V 400 V 600 V

Continuous load

current IL

A 0.50 A 0.30 A 0.16 A 0.12 A 0.10 A 0.04 A A connection: Peak

AC, DC

B,C connection: DC

B 0.65 A 0.40 A 0.20 A 0.13 A 0.11 A 0.05 A

C 0.80 A 0.56 A 0.28 A 0.15 A 0.12 A 0.06 A

Peak load current Ipeak 1.0A 0.90A 0.48A 0.3 A 0.3 A 0.12 A A connection: 100 ms

(1 shot) VL= DC

Power dissipation Pout 450 mW

Total power dissipation PT500 mW

I/O isolation voltage Viso 1,500 V AC

Temperature

limits

Operating Topr –40°C to +85°C –40°F to +185°FNon-condensing at

low temperatures

Storage Tstg –40°C to +100°C –40°F to +212°F

Ton

Input

Output 10%

90%

Toff

GU PhotoMOS (AQV21❍S)

REFERENCE DATA

1. Load current vs. ambient temperature

characteristics

Allowable ambient temperature: –40°C to +85°C

–40°F to +185°F

Type of connection: A

2.-(1) On resistance vs. ambient temperature

characteristics

Measured portion: between terminals 4 and 6;

LED current: 5 mA; Load voltage: Max. (DC);

Continuous load current: Max. (DC)

2.-(2) On resistance vs. ambient temperature

characteristics

Measured portion: between terminals 4 and 6;

LED current: 5 mA; Load voltage: Max. (DC);

Continuous load current: Max. (DC)

200

300

400

500

600

0204060

8085

100-40 -20

100

Load current, mA

Ambient temperature, °C

AQV212S

AQV215S

AQV217S

AQV210S

AQV214S

AQV216S 0

–40

0–20 20 40 60 8085

AQV212S

AQV215S

On resistance, Ω

Ambient temperature, °C

–40

0–20 20 40 60 8085

AQV217S

AQV214S

AQV210S

On resistance, Ω

Ambient temperature, °C

2.-(3) On resistance vs. ambient temperature

characteristics

Measured portion: between terminals 4 and 6;

LED current: 5 mA; Load voltage: Max. (DC);

Continuous load current: Max. (DC)

3. Turn on time vs. ambient temperature

characteristics

LED current: 5 mA; Load voltage: Max. (DC);

Continuous load current: Max. (DC)

4. Turn off time vs. ambient temperature

characteristics

LED current: 5 mA; Load voltage: Max. (DC);

Continuous load current: Max. (DC)

–40

120

0–20 20 40 60 8085

AQV216S

100

On resistance, Ω

Ambient temperature, °C

1.0

1.5

–40

2.5

0–20 20 40 60 8085

0.5

2.0

AQV212S,AQV215S

3.0

AQV214S,AQV217S

AQV210S,

AQV216S

Turn on time, ms

Ambient temperature, °C

0.1

0.2

0.3

0.4

–40 0–20 20 40 60 8085

AQV212S

AQV215S

0.5

Turn off time, ms

Ambient temperature, °C

AQV214S,AQV217S,AQV210S,AQV216S

5. LED operate current vs. ambient

temperature characteristics

Sample: All types;

Load voltage: Max. (DC);

Continuous load current: Max. (DC)

6. LED turn off current vs. ambient temperature

characteristics

Sample: All types;

Load voltage: Max. (DC);

Continuous load current: Max. (DC)

7. LED dropout voltage vs. ambient

temperature characteristics

Sample: All types;

LED current: 5 to 50 mA

LED operate current, mA

Ambient temperature, °C

–40

0–20 20 40 60 80 85 0

–40

0–20 20 40 60 8085

LED turn off current, mA

Ambient temperature, °C

1.0

1.1

1.2

1.3

–20–40 0204060 10080 85

1.4

1.5

LED dropout voltage, V

Ambient temperature, °C

50mA

30mA

20mA

10mA

5mA

GU PhotoMOS (AQV21❍S)

8.-(1). Current vs. voltage characteristics of

output at MOS portion

Measured portion: between terminals 4 and 6;

Ambient temperature: 25°C 77°F

8.-(2). Current vs. voltage characteristics of

output at MOS portion

Measured portion: between terminals 4 and 6;

Ambient temperature: 25°C 77°F

9. Off state leakage current vs. load voltage

characteristics

Measured portion: between terminals 4 and 6;

Ambient temperature: 25°C 77°F

1.00.6

–1.0 –0.6

–0.5

–0.3

–0.1

0.5

0.3

0.1

0.2

0.4

–0.2

–0.4

–0.4–0.8

0.4 0.8

AQV212S

AQV215S

Voltage,V

Current, A

0.2

–0.2

–5 –3

–200

–120

–40

200

120

160

–80

–160

–2–4

AQV217S

AQV214S

AQV216S

Voltage,V

Current, mA

AQV210S

–1

060 100

10–3

10–6

10–9

10–12

20 40 80

AQV214S

AQV216S

Load voltage, V

Off state leakage current, A

10. Turn on time vs. LED forward current

characteristics

Measured portion: between terminals 4 and 6;

Load voltage: Max. (DC); Continuous load current:

Max. (DC); Ambient temperature: 25°C 77°F

11. Turn off time vs. LED forward current

characteristics

Measured portion: between terminals 4 and 6;

Load voltage: Max. (DC); Continuous load current:

Max. (DC); Ambient temperature: 25°C 77°F

12. Output capacitance vs. applied voltage

characteristics

Measured portion: between terminals 4 and 6;

Frequency: 1 MHz;

Ambient temperature: 25°C 77°F

0.2

0.4

0.6

0.8

1.0

10 20 30 40 50 60

1.2

AQV216S

LED forward current, mA

AQV212S,AQV215S

Turn on time, ms

AQV214S,AQV210S,AQV217S 0

0.02

0.04

0.08

0.06

10 20 30 40

0.10

0.12

AQV214S

AQV210S

AQV217S

AQV215S

AQV212S

AQV216S

LED forward current, mA

Turn off time, ms

100

10 20 30 40 50

150

200

AQV214S,AQV210S,AQV216S

AQV217S

AQV212S

AQV215S

Applied voltage, V

Output capacitance, pF